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  • 2000-2004
  • 1990-1994  (15)
  • 1992  (15)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3636-3638 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and quick technique based on thermoelectric effect of semiconductors has been developed for screening the conductivity type of narrow band-gap HgCdTe materials. This technique generates a temperature gradient across the sample by partly dipping it in liquid nitrogen. The induced Seebeck voltage is then measured by loading two spring contact probes to two separate points on the sample below and above the liquid nitrogen level. It was found, as expected by the theory, that the thermoelectric measurements on p-type HgCdTe are much less influenced by the inverted surface effects than Hall measurements.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5269-5271 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the possibility that deep levels are associated with dislocations in narrow band gap HgCdTe, deep level transient spectroscopy has been used to study n+-p diodes fabricated on p-type bulk Hg0.78Cd0.22Te samples with either a "normal'' dislocation density of about 105 cm−2 or a high dislocation density of about 106 cm−2. These samples which are gold doped with a hole concentration of 1.2×1015 cm−3, have a band gap of about 0.12 eV at 77 K. In samples with a "normal'' dislocation density, a deep level of about 80 meV above the valence band was found. However, a midgap level of about 60 meV above the valence band with larger peak amplitude and broader line shapes was found in the sample with a high dislocation density.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4761-4766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination mechanisms of the minority-carrier lifetime in n-type indium-doped Hg0.78Cd0.22Te liquid-phase-epitaxial films have been studied. Its temperature dependence was measured from 78 to 200 K using standard photoconductivity decay method. The dependence on doping concentration from 1×1014 to 2×1015 cm−3 was measured using a contactless microwave reflection method at 77 K. From best fits to the experimental temperature dependence data, it was found that lifetimes at temperatures higher than 130 K were dominated by Auger recombination with a value of 0.15 for the overlap integral of Bloch functions. For most films with a doping concentration below 1×1015 cm−3, Shockley–Read–Hall recombination via an acceptor-like deep level at about 40 meV below the conduction band affected lifetimes below 120 K. It was also found that the recombination parameters determined from fitting the lifetime versus temperature curves were adequate to analyze and understand the lifetime versus doping concentration curve, which comprised data from over 100 films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2167-2169 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights (SBHs) of amorphous interlayer/Si interfaces in Ti thin films on (001)Si have been measured by forward current-voltage technique. A-interlayers were observed to form by cross-sectional transmission electron microscopy in both Ti thin films on n- and p-type silicon systems in samples annealed at temperatures of and lower than 450 °C for 30 s. Although the SBHs vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBHs at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be 0.52–0.54 and 0.59–0.57 eV, respectively. Formation of homogeneous metal a-interlayer/Si interfaces correlated with their SBHs in a number of refractory metal-silicon systems promises to greatly clarify the SBH formation mechanisms.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1365-3121
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: In the Boreal Chalk of northwestern Europe the base of the Maastrichtian Stage is defined by entry of the belemnite Belemnella. In the Kronsmoor section, in northwestern Germany, which is a standard section for the European Chalk, 87Sr/86Sr at the Campanian/ Maastrichtian (C/M) boundary is 0.707723±9 (10). An isotopic correlation of this boundary to the US Western Interior, for which a highly refined cephalopod biostratigraphy exists, suggests that this boundary, as defined at Kronsmoor, occurs within the Baculites jenseni zone. This correlationagrees with the latest placement based on biostratigraphic criteria. On87Sr/86Srcriteria the boundary at Kronsmoor correlates to the English Chalk at Trunch, Norfolk, UK, at a level 3.5 m lower than its position based on biostratigraphic criteria.At Kronsmoor, 87Sr/86Sr increases in a quasi-linear manner through much of the section, suggesting that, averaged over intervals of 1 Myr, the gross sedimentation rate and temporal rate of change of 87Sr/86Sr were approximately constant through the section. For US samples, zonally-plotted values of 87Sr/86Sr define a quasi-linear trend, which suggests a moderate uniformity of zonal duration from the Baculites compressus zone (73.2±0.7 Ma, 10) to the Baculites grandis zone (70.1±0.7 Ma, 10).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 657 (1992), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 4032-4035 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
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    Amsterdam : Periodicals Archive Online (PAO)
    Population research and policy review. 11:3 (1992:Sept.) 217 
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  • 9
    ISSN: 1432-1440
    Keywords: Graves' disease ; HLA-DRB3 alleles ; Endocrine ophthalmopathy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Graves' disease (GD) is a human leukocyte antigen (HLA) linked organ-specific autoimmune disease. In German GD patients the disease is associated with HLA specificities of the HLA-DRw52 family (HLA-DR3, -DR5, and DR6; HLA-DRB3 positive HLA haplotypes). Recently, a strong association with a HLA-DRB3 restriction fragment length polymorphism gene has been described. To study HLA-DRB3 alleles and their association with the disease, a large cohort of controls (n = 3724) and GD patients (n = 304) was analyzed. HLA-DR allelic combinations revealed an increase in HLA-DR3/DR5 heterozygous patients (relative risk 2.9; P〈0.001). HLA-DRB3 alleles, as defined by DNA typing in HLA-DR matched groups revealed a significant increase in DRB3*0101 homozygosity (relative risk 17.5; P〈 0.001) in HLA-DR3 homozygous patients. In GD patients with ophthalmopathy (grade II or higher, according to Werner) DRB3*0101/*0202 heterozygosity revealed an increased relative risk of 5.5 (P〈0.001). Non-HLA-DR3 homozygous, DRB3*0101/*0202 heterozygous patients were at the highest risk for endocrine ophthalmopathy (relative risk 10; P〈0.001). Our data, based on DNA typing methods of HLA-D genes, provide evidence that the susceptibility is strongly associated with HLA-DRB3 genes.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0843
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The CMV (cisplatin, methotrexate, and vinblastine) and M-VAC (methotrexate, vinblastine, doxorubicin, and cisplatin) regimens were used to treat 19 patients with advanced transitional-cell carcinoma (TCC) of the urothelial tract. In the CMV group, the partial response rate was 45.5% and the mean response duration was 6.3 months. No complete response was obtained in our series. The median duration of survival was 15.8 and 8.3 months in responders and nonresponders, respectively. The toxic symptoms included one case of sepsis and three cases of renal toxicity. However, nausea and vomiting were experienced by most patients and required the administration of antiemetics. In the M-VAC group, the median duration of survival for responders was longer than that of nonresponders (〉10.2 vs 7.2 months), although the number of patients was too small for this difference to reach statistical significance. The toxic symptoms included one case of sepsis, two cases of renal toxicity, and nausea and vomiting in most patients. Bone metastasis in three patients did not respond to chemotherapy (CMV), a finding that is compatible with the results reported by other investigators. In summary, chemotherapy with the CMV or M-VAC regimen was effective in improving the response rate of patients. However, the duration of response was short, toxicity was severe in some cases, and the efficacy against bone lesions was poor. These problems must be solved to improve the outcome of patients with TCC following chemotherapy with the CMV or M-VAC regimens.
    Type of Medium: Electronic Resource
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