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  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular-beam epitaxial layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8227-8236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxy InAsySb1−y layers were grown at temperatures ranging from 295 to 470 °C across the full composition range. Transmission electron microscopy and transmission electron diffraction (TED) examinations showed that for layers grown at and below 400 °C with nominal compositions 0.4〈y〈0.8, separation into two phases occurred resulting in a series of alternating plates approximately parallel to the layer surface. TED showed that the cubic lattices of the two phases were tetragonally distorted and their compositions were deduced to be typically InAs0.38Sb0.62 and InAs0.72Sb0.28. The plates were larger and more regular along the [1¯10] direction than the [110] direction. As the growth temperature increased from 295 to 400 °C, for layers of nominal composition InAs0.5Sb0.5, the plate length increased from 0.1 to 2.0 μm and the plate thickness from 10 to 50 nm. Crystallographic defects were present in the layers and their occurrence was different in the phase-separated and non-phase-separated layers. The plates formed spontaneously at the growing surface and were stable during subsequent annealing at 350 and 370 °C. It is suggested that they arise due to the presence of a miscibility gap at these growth temperatures. We have termed these spontaneously grown plate structures "natural'' strained layer superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353440
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  • 2
    Electronic Resource
    Electronic Resource
    The molecular beam epitaxial growth of InSb on (111)B GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 215-217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117376
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3593-3595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscope studies were made of CuPt-type ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers grown at temperatures in the range 295–470 °C. Ordering occurs with a maximum at a growth temperature of 370–400 °C, individual (1¯11) and (11¯1) ordered domains up to 10 nm in size are present, and there is a modulation of periodicity 3 d110 within the layers, where d110 is the (110) lattice spacing. The latter correlates with a [2×3] atomic surface reconstruction present during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111208
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of high quality InSb (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3338-3340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112384
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better? (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3324-3326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial growth of a normally homogeneous InAs0.5Sb0.5 alloy below 430 °C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a "natural'' strained layer superlattice (n-SLS) with clearly defined interfaces modulated in the [001] growth direction. A description of the n-SLS growth mode in InAsSb is outlined, and the optical response of a n-SLS structure, which extends to 12.5 μm−considerably further than that of a homogeneous InAs0.5Sb0.5 layer (8.9 μm)−is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105720
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  • 6
    Electronic Resource
    Electronic Resource
    Passive mode locking and Q switching of an erbium 3 μm laser using thin InAs epilayers grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1658-1660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passive mode locking and Q switching has been achieved for the first time in an Er3+:YSGG laser at λ=2.8 μm using ultrathin single-crystal InAs epilayers grown on GaAs substrate which were subsequently bombarded with 15 keV protons at a dose of 1013 cm−2. The bleaching effect was due to a dynamic Moss–Burstein mechanism with a fast (〈100 ps) recovery time. In the case of passive mode locking, pulses of 10 MW power were generated at λ=2.8 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106259
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  • 7
    Electronic Resource
    Electronic Resource
    High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2958-2960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room-temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114242
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  • 8
    Electronic Resource
    Electronic Resource
    Churg-Strauss disease: deterioration in a twin pregnancy. Successful outcome following treatment with corticosteroids and cyclophosphamide (1997)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 104 (1997), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1997.tb11991.x
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  • 9
    Electronic Resource
    Electronic Resource
    Calcium in plant senescence and fruit ripening (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 7 (1984), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Calcium has long been associated with regulation of the ripening process of fruit and post-harvest storage life. Specifically, maintenance of relatively high calcium concentrations in fruit tissue results in a slower rate of ripening, as seen in lower respiration rates, reduced ethylene production, and slower softening of fruit flesh. There are also some specific fruit disorders such as bitter pit, which can be prevented if sufficient calcium is present. Senescence of other plant tissues such as leaves and flowers has also been shown to be retarded by the application of calcium.Work leading to the above information is reviewed and discussed in the context of what is currently known of cellular regulation of calcium in plants. The major sites for the action of calcium in senescence and ripening are suggested to be in membrane structure and function, and in cell wall structure. Although high external concentrations of calcium are an advantage in reducing the rate of senescence or ripening, it is emphasized that normal cell function requires the maintenance of low concentrations of free calcium in the cell cytosol. It is suggested that one possible feature of senescence is a breakdown in such cellular regulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1984.tb01438.x
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  • 10
    Electronic Resource
    Electronic Resource
    Heat-induced protection against death of suspension-cultured apple fruit cells exposed to low temperature (2001)
    Oxford, UK : Blackwell Science, Ltd
    Plant, cell & environment 24 (2001), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Death of suspension-cultured apple fruit cells (Malus domestica Borkh. cv. Braeburn), resulting from exposure to low temperature (1 °C), was reduced by a prior 1 h/38 °C treatment. Pre-heated chilled cells produced less ethylene, indicating lower chilling injury. Heat treatment resulted in increased transcripts for a low molecular weight (hsp17) and a 70 kDa heat shock protein (hsp), but expression weakened within 24 h following the transfer of cells to 25 °C. When cells were instead transferred to 1 °C after heat, elevated hsp gene expression persisted for up to 3 d. Flow cytometric analysis of apple cell protoplasts showed that the 1 °C treatment resulted in a subpopulation of protoplasts undergoing cell death, not observed with the 38 °C pre-treatment. Chromatin condensation did not occur with the heat treatments. These results suggest that heat-induced reduction of cell death at low temperatures may involve persistence of hsps, and low-temperature susceptibility is less likely to be associated with programmed cell death. All cells do not respond in the same way, their tolerance being associated with different states of metabolism or of the cell cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2001.00770.x
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