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  • 1995-1999  (29)
  • 1940-1944
  • 1996  (11)
  • 1995  (18)
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  • 1995-1999  (29)
  • 1940-1944
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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of crystalline carbon nitride thin films by laser processing at a liquid–solid interface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3489-3491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser induced reactive quenching at a liquid–solid interface was used for the synthesis of tetrahedrally coordinated crystalline carbon nitride on a tungsten substrate. The crystalline phase was identified by transmission electron diffraction. X-ray photoelectron spectroscopy indicated that the carbon atoms are coordinated only tetrahedrally with nitrogen—as expected for C3N4. The atomic percentage of N (considering only those atoms coordinated with C) is about 35%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117261
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  • 2
    Electronic Resource
    Electronic Resource
    Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in accumulation mode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1638-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor (MOS) capacitance–voltage (C–V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40–200 A(ring)) on p-type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined "effective dielectric thicknesses'' in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (〈80 A(ring)). The effective dielectric thicknesses at oxide electric fields of 2–6 MV/cm have been determined to be 2–3 A(ring) larger for the quantum mechanical case than for the classical case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113877
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114822
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  • 4
    Electronic Resource
    Electronic Resource
    Role of silicon surface in the removal of point defects in ultrashallow junctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2228-2230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of the Si surface in the annihilation of point defects has been studied for ultrashallow p+/n junctions. The dopant and defect distributions for low-energy implants lie within a few hundred angstroms of the surface. The proximity of the Si surface has been shown to help in the efficient removal of point defects for the shallower junctions. A 5 keV, 1×1015 cm−2 BF2 implant and a 30 keV, 3.3×1014 cm−2 BF2 implant were estimated to create comparable damage at different depths. After identical anneals, the higher-energy implant sample showed end-of-range dislocation loops in cross-sectional transmission electron microscopy analysis, while the low-energy sample, for which the point defect distribution was closer to the surface, was defect free. This is attributed to the role of the Si surface as an efficient sink for the removal of point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117136
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  • 5
    Electronic Resource
    Electronic Resource
    Molybdenum contamination in low-temperature epitaxial silicon films grown by remote plasma chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 109-111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum is a material commonly used in ultrahigh vacuum silicon processing systems. This letter shows that even at temperatures as low as 500 °C, the presence of Mo in contact with silicon during processing can, under certain circumstances, lead to Mo contamination of the silicon. MOS capacitors were fabricated on epitaxial silicon films grown at ∼500 °C by remote plasma chemical vapor deposition. The wafers were mounted on metal pucks made of either molybdenum or steel during the epitaxial growth process. Capacitor results of the Mo puck-mounted wafers showed low minority carrier lifetimes and trapping ledges in the I–V plots, problems which were absent when steel pucks were used. Structural defects and plasma-induced sputtering were ruled out and secondary ion mass spectroscopy (SIMS) analysis verified the presence of Mo in the wafers, confirming that Mo contamination from the puck during epitaxial growth was responsible for the poor electrical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118090
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  • 6
    Electronic Resource
    Electronic Resource
    Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of different chemical mechanisms for adsorption, which depend on the incidence energy of disilane, on the film morphology is investigated by comparing deposition by high (∼2 eV) kinetic energy disilane jets, direct chemisorption; low (∼0.09 eV) kinetic energy disilane jets and ultra high vacuum chemical vapor deposition, trapping-mediated chemisorption. For substrate temperatures of 500–550 °C the mechanism for adsorption does not influence the film morphology as observed for films up to 3300 A(ring) thick, which are comparable in smoothness to the starting substrate, as determined by atomic force microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117074
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  • 7
    Electronic Resource
    Electronic Resource
    The dependence of ultrashallow junction depths on impact dose rates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1223-1225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115014
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  • 8
    Electronic Resource
    Electronic Resource
    Particle behavior in the turbulent boundary layer. I. Motion, deposition, and entrainment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 1095-1106 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The motion of solid particles near the wall in a turbulent boundary layer was investigated experimentally in a water flume by flow visualization techniques and by LDA. The particles were of polystyrene (specific density ∼1.05) with diameters ranging from 100 to 900 μm. Results show that particle motion, as well as entrainment and deposition processes, are controlled by the action of coherent wall structures, which appear to be funnel vortices. The behavior of the particles is consistent with the motion and effects of such vortices. The vortices appear to cause the formation of particle streaks near the wall, to create suitable conditions for particle entrainment, and to assist in particle deposition by conveying them from the outer flow to the wall region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868551
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  • 9
    Electronic Resource
    Electronic Resource
    Asymmetric line shapes in the indirect predissociation of the f 1Σu+ Rydberg state of O2 (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6631-6640 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotationally-resolved Beutler–Fano line shapes observed in the photoabsorption spectrum of the (2,0) band of the 3pπuf 1Σu+←X 3Σg− Rydberg system of O2 are interpreted using a coupled-channel Schrödinger equations model. It is found that the f 1Σu+ state is indirectly predissociated by the B 3Σu− continuum, and that the f←X transition borrows oscillator strength primarily from dipole-allowed transitions into the mixed Rydberg-valence states of 3Σu− symmetry. Both the predissociation linewidth and oscillator strength of the (2,0) resonance are controlled by the spin-orbit interaction between the 1Σu+ and 3Σu− components of the 3p-complex. There is some evidence for a destructive quantum interference between the transition amplitude borrowed from the 3pπuE 3Σu−←X 3Σg− transition and that borrowed weakly from the f 1Σu+←b 1Σg+ transition through spin-orbit mixing between the b 1Σg+ and X 3Σg− states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469379
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  • 10
    Electronic Resource
    Electronic Resource
    Evaluation of Drug-Lipid Association Constants from Microelectrophoretic Mobility Measurements (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 1134-1137 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00004a017
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