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  • 2005-2009
  • 1995-1999  (7)
  • 1935-1939
  • 1999  (4)
  • 1995  (3)
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Years
  • 2005-2009
  • 1995-1999  (7)
  • 1935-1939
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 552-554 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 1012–1014 Ω cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500–700 °C. The current-voltage (I–V) characteristics as a function of thickness for films annealed at 700 °C for 1 h, indicated bulk limited conduction and the log(I) vs V1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance–voltage measurements on films in a metal–insulator–semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of ∼5 nm was measured and calculated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The non-ohmic properties of the 98.95% SnO2 + 1.0%,CoO + 0.05%,Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (α = 32) was obtained for a sintering temperature of 1300°C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole–Frenkel types.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 14 (1995), S. 692-694 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of Cr2O3 on the electrical properties of the multicomponent ZnO varistors was investigated using voltage-current curves and impedance spectroscopy. The structure and morphological modifications were analysed by X-ray diffraction and scanning electron microscopy, respectively. It was observed in samples with addition 0.1 mol % Cr2O3 that there was an improvement in the electrical properties of the varistors, but the increase in concentration had a deleterious effect on the potential barrier at the grain boundary. The excess Cr2O3 segregates at the grain-boundary region and increases the donor concentration, leading to a higher leakage current.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An experimental and theoretical study of the ferroelectric and piezoelectric behavior of PZT doped with barium is presented. Ab initio perturbed ion calculations was carried out. The properties, such as remnant polarization, coercive field and the coupling factor of the PZT at constant sintering temperature was compared with the Zr4+/Ti4+ ions dislocation energy and the lattice interaction energy. An agreement between the experimental and theoretical results, with a decrease of the interaction energy and an inversion of the energy stability from tetragonal to rhombohedral phase was observed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 4852-4856 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract By assuming complete ionicity, a theoretical study of structure and energetics in zirconias stabilized by the addition of Y2O3 or MgO, has been reported. The simulation was carried out using the Ewald summation technique. The results indicate that the cubic structures of these ionic crystals are metastable and they transform without an energy barrier to a pseudomonoclinic or tetragonal structure.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 34 (1999), S. 2751-2756 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using the Rietveld method, phases of ceria-doped zirconia, calcined at temperatures of 600 and 900 °C, were quantitatively analysed for different concentrations of ceria. The results show that the stabilization of zirconia depends on the dopant concentration and calcination temperature. Moreover, the theoretical calculation using the ab initio Hartree–Fock–Roothaan method indicates that the most stable phases for ceria-stabilized zirconia are cubic or tetragonal, in accordance with experimental results.
    Type of Medium: Electronic Resource
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