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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of nanocrystallites embedded in hydrogenated amorphous silicon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6193-6196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting nanocrystallites embedded in an a-Si:H matrix using a conventional plasma-enhanced chemical-vapor-deposition system. It was found that the photoluminescence properties are directly related to the deposition parameters. The quantum size effect model is proposed to explain the photoluminescence. Two structural prerequisites are proposed for this kind of films to exhibit effective light emission: One is an upper limit for mean crystallite size of about 3.4 nm, the other is an upper limit for crystallinity of about 30%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360778
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of phosphorous doping on the stability of coercivity of cobalt-substituted acicular oxides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 409-412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of P doping on the coercivity and magnetic-thermal stability of Co-substituted iron oxides have been investigated by means of magnetic measurements, torque curves, and Mössbauer spectra. It is found that the P doping of cobalt-substituted acicular oxides promotes the coercivity and the stability with temperature of the coercivity. Then effects may be attributed to the increase of the cubic magnetocrystalline anisotropy constant K1 and the activation energy E, respectively. The Mössbauer results suggest that P ions are located in the neighborhood of the B-site Fe ions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360617
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  • 3
    Electronic Resource
    Electronic Resource
    Modified Labdane Diterpenes from Amphiachyris amoena (1995)
    s.l. : American Chemical Society
    Journal of natural products 58 (1995), S. 209-216 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50116a008
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 891-895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of spacers in modulation-doped Zn1−xCdxSe/ZnSe:Cl multiple quantum wells (MD-MQWs) was investigated by photoluminescence (PL) and time-of-flight secondary-ion-mass spectrometry (TOF-SIMS). A comparison was made between structures with and without spacers as a function of annealing temperature. The diffusion of Cl and Cd was monitored by TOF-SIMS depth profiling and photoluminescence. Although TOF-SIMS does not show any significant diffusion of Cl and Cd in both structures at temperatures up to 385 °C, the PL results indicate the modification of optical properties in the Zn1−xCdxSe/ZnSe:Cl MD-MQWs due to annealing. Up to an annealing temperature of 385 °C, the MD-MQWs with spacers show superior optical quality in the quantum well regions, while quenching of the quantum well band-edge PL and strong enhancement of deep-level emission were observed from the MD-MQWs without spacers. This phenomenon suggests that the radiative deep-level emission may provide more efficient channel for electron–hole recombination with increasing annealing temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370863
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  • 5
    Electronic Resource
    Electronic Resource
    Angle chord integral inverter and a rotating type optical probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1730-1734 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The inversion problem of angle dependent chord integrals is theoretically studied and a rotating type optical probe is developed for its application. The proposed solution is computationally efficient and robust to measurement additive noise. The probe system constructed is tested in an inductively coupled plasma source by measuring a spectral line intensity of argon plasma. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149659
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  • 6
    Electronic Resource
    Electronic Resource
    A frequency modulated mm-wave interferometer with a single sideband upconverter (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2516-2519 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A frequency modulated interferometer is developed, which uses a 94 GHz Gunn oscillator and a single sideband (SSB) upconverter as a frequency modulator. An SSB upconverter makes it possible to use a heterodyne phase measurement technique with one mm-wave source. In addition, the influence of frequency drift and phase noise of a mm-wave source on the phase measurement can be reduced. In this work, the performance of a SSB upconverter as a frequency modulator is examined. Also, overall performance of the mm-wave interferometer with a SSB upconverter and line density measurement results in a mirror device are described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149784
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  • 7
    Electronic Resource
    Electronic Resource
    Overview of Korea Superconducting Tokamak Advanced Research diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1397-1401 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the Korean national fusion program for constructing a superconducting tokamak, that is capable of a steady-state operation. Currently, the KSTAR diagnostic group is concentrating on conceptual design activities to provide measurements of the plasma behavior that is necessary to satisfy the KSTAR missions. A diagnostic overview for the KSTAR device is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149631
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  • 8
    Electronic Resource
    Electronic Resource
    Insecticidal properties of some derivatives of L-canavanine (1995)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 43 (1995), S. 2728-2734 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf00058a034
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffraction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 237-243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II–VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs(004) peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for nondestructive characterization of buried interfaces in semiconductor layer materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369434
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  • 10
    Electronic Resource
    Electronic Resource
    Study of photoluminescence in nanocrystalline silicon/amorphous silicon multilayers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report in this letter the observation of visible photoluminescence (PL) at room temperature from hydrogenated nanocrystalline silicon (nc-Si:H)/amorphous silicon (a-Si:H) multilayers (MLs) prepared in a plasma enhanced chemical vapor deposition system without any postprocessing. The PL peak wavelength can be controlled, blueshifting from 750 to 708 nm, through reducing the width of the nc-Si:H sublayers from 4.0 to 2.1 nm. Quantum size effect in nc-Si:H sublayers of the ML is responsible for the emission above the band gap of bulk crystal Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114059
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