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  • 2000-2004
  • 1995-1999  (6)
  • 1920-1924
  • 1995  (6)
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  • 2000-2004
  • 1995-1999  (6)
  • 1920-1924
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  • 1
    Electronic Resource
    Electronic Resource
    High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1614-1622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (∼2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm−1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360255
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1517-1522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expitaxial ferroelectric BaTiO3 thin films have been grown on (001) MgO and MgO-buffered (001) GaAs substrates by pulsed laser deposition to explore the effect of substrate lattice parameter. X-ray-diffraction studies showed that the BaTiO3 films on both MgO single-crystal substrates and MgO-buffered (001) GaAs substrates have a cube-on-cube epitaxy; however, for the BaTiO3 films grown on MgO the spacing of the planes parallel to the substrate was close to the c-axis dimension of the unconstrained tetragonal phase, whereas the BaTiO3 films on MgO/GaAs exhibited a spacing closer to the a-axis dimension of the unconstrained tetragonal phase. The cube-on-cube epitaxy was maintained through the heterostructures even when thin epitaxial intermediate buffer layers of SrTiO3 and La0.5Sr0.5CoO3 were used. The intermediate layers had no effect on the position of the BaTiO3 peak in θ-2θ scans. Together, these observations indicate that, for the materials combinations studied, it is the thermal-expansion mismatch between the film and the underlying substrate that determines the crystallographic orientation of the BaTiO3 film. Preliminary measurements indicate that the BaTiO3 films are "weakly'' ferroelectric. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358902
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial regrowth of ruby on sapphire for an integrated thin film stress sensor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 293-295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of thin film ruby by the epitaxial growth of Cr-doped amorphous alumina on sapphire is described. The incorporation of Cr onto the Al cation sites has been found by ion channeling measurements. It is also confirmed by the observation of the R1 and R2 luminescence lines characteristic of ruby. The frequency of the R lines shift linearly with applied stress and the piezo-spectroscopic coefficient is the same as for bulk ruby. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113522
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  • 4
    Electronic Resource
    Electronic Resource
    Antifungal activity of halophenols and halonitrophenols (1995)
    Springer
    Monatshefte für Chemie 126 (1995), S. 1161-1166 
    Details
    ISSN: 1434-4475
    Keywords: Antifungal activity ; Halophenols ; Halonitrophenols
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung 31 Verbindungen (Phenol; seine 12 möglichen monohalogenierten Derivate; 18 Nitrophenole (2- und 4-Nitrophenole, 4-, 5- und 6-Halogen-2-nitrophenole, 3-Halogen-4-nitrophenole)) wurden gegenüber 6 Pilzstämmen (A. niger, A. oryzae, M. verrucaria, T. viride, M. cirinelloides, T. mentagrophytes) inSabouraud-Nähmedium auf ihre fungizide Aktivität untersucht. Am effizientesten waren dabei 5-Fluor- und 5-lod-2-nitrophenole (Hemmung aller Stämme bei Konzentrationen 〈10 µg/ml). 6-lod-2-nitrophenol war gegen 5 Pilze bei Konzentrationen 〈10 µg/ml und gegenüberM. cirinelloides zwischen 10 und 100 µg/ml aktiv.
    Notes: Summary Thirty one compounds (phenol; its 12 possible monohalo analogues; 18 nitrophenols (2- and 4-nitrophenols, 4-, 5-, and 6-halo-2-nitrophenols, 3-halo-4-nitrophenols)) were tested for antifungal activity against six fungi (A. niger, A. oryzae, M. verrucaria, T. viride, M. cirinelloides, andT. mentagrophytes) inSabouraud dextrose broth. The two most fungitoxic compounds of those studied were 5-fluoro- and 5-iodo-2-nitrophenols which inhibited all the fungi at concentrations under 10 µg/ml. 6-Iodo-2-nitrophenol inhibited five fungi at a concentration below 10 µg/ml andM. cirinelloides at 10–100 µg/ml.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00811385
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  • 5
    Electronic Resource
    Electronic Resource
    The release of captive bred snails (Partula taeniata) into a semi-natural environment (1995)
    Springer
    Review of industrial organization 4 (1995), S. 645-663 
    Details
    ISSN: 1573-7160
    Keywords: captive breeding ; introduction ; Partula ; monitoring invertebrate conservation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Notes: Abstract A population of zoo bred Partula taeniata was released into a patch of native Polynesian plants in the Palm House at the Royal Botanic Gardens, Kew, London, UK. The released snails were from a colony established from wild-caught snails in 1982, which had been in captive conditions for up to six generations. Monitoring of the snails was continuous and intensive for the first 2 weeks, and at decreasing frequency over the next 15 months. There was high survivorship early on in the release, but once the intensive monitoring ended survivorship became hard to determine due to difficulties in locating snails in the large and complex habitat. However, snails are known to have persisted for at least 15 months, and new individuals have been noted maturing into all developmental stages. The snails exhibited patterns of feeding and microhabitat choice similar to those observed in the wild, despite being reared in a highly artificial environment. The methods and results provide some guidelines for future release trials for this highly endangered group of snails.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00222520
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  • 6
    Electronic Resource
    Electronic Resource
    Alternative uses of ‘we’ (1995)
    Springer
    Philosophia 24 (1995), S. 389-403 
    Details
    ISSN: 1574-9274
    Source: Springer Online Journal Archives 1860-2000
    Topics: Philosophy
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02379965
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