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  • 1995-1999  (4)
  • 1995  (4)
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  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Hot electron transport in SiO2 probed with a scanning tunnel microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 730-732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structures were detected as a collector current in the Si by using a STM configuration known as ballistic electron emission microscopy. The collector current, observed for STM tip potentials (approximately-greater-than)4 V and for oxide biases ≥0 V, is direct evidence for electron transmission through the conduction band of the SiO2. Negative oxide biases delayed the onset of current to correspondingly higher tip potentials. A simple model was used to extract the energy and bias dependent transmission probabilities from the experimental data for a 62 A(ring) SiO2 layer. The results are compared with Monte Carlo calculations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114114
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    p+ doping of Si by Al diffusion upon annealing Al/n-Si(111)7×7 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3010-3012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for the formation of a p+-layer underneath a Si(111)7×7 surface is presented. It is based on annealing of an epitaxial Al/n-Si(111) interface up to complete desorption of the Al film. This leads to a strong potential variation within the substrate, as observed in Si-2p core-level photoemission spectra with variable sampling depth, while scanning-tunneling microscopy reveals an unchanged 7×7 reconstructed surface. These observations are consistent with a p+ doping of (4±2)×1018/cm3 and a lowering of the surface Fermi level by (0.06±0.02) eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114260
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    (Methyldiphenylphosphine)(trimethylsiloxy)gold(I) (1995)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 2030-2032 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270195003775
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Coulomb interaction between conduction electrons andf-electrons in the Anderson impurity model (1995)
    Springer
    The European physical journal 96 (1995), S. 383-389 
    Details
    ISSN: 1434-6036
    Keywords: 75.20.H ; 71.50 ; 71.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The influence of the Coulomb interaction between localf-electrons and conduction electrons on the dynamical properties off-electrons is investigated for the Anderson impurity model. An equation-of-motion technique is used to treat simultaneously the Coulomb interaction and the hybridization. We find that the Abricosov-Suhl resonance remains sharp but is reduced in size while the charge excitation peak of thef-electrons is broadened.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01313060
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    Paper (German National Licenses)
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