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  • 1
    Electronic Resource
    Electronic Resource
    The change of magnetic properties in nanocrystalline Fe88Zr7B4Cu1 alloy by cooling rate : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5153-5155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of cooling rate, followed immediately after the isothermal annealing, on the magnetic properties of melt-spun Fe88Zr7B4Cu1 alloy. As the cooling rate is increased, the effective permeability, 2×104, improved by 50% on annealing at around 650 °C. The remanence ratio is also found to concomitantly decrease with the increasing cooling rate. The increase of permeability and decrease of remanence ratio are consistent with the expected suppression of the induced magnetic anisotropy. From an analysis of the transmission electron microscopy micrographs, and the x-ray diffraction spectral intensities, we find that the volume fraction of the amorphous matrix to that of the nanocrystallized magnetic entities to be about 20%, at which the permeability has the maximum value for this system. Scanning electron microscopy and antiferromagnetic investigations show a much smoother surface morphology with a finer grain distribution in the rapidly quenched sample. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361538
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  • 2
    Electronic Resource
    Electronic Resource
    Electron interaction with confined acoustic phonons in cylindrical quantum wires via deformation potential (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2815-2822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of phonon confinement on electron–acoustic-phonon scattering is studied in cylindrical semiconductor quantum wires. In the macroscopic elastic continuum model, the confined-phonon dispersion relations are obtained for several crystallographic directions with the two cardinal boundary conditions: free-surface and clamped-surface boundary conditions. The scattering rates due to the deformation potential interaction are obtained for these confined phonons and are compared with those of bulk-like phonons for a number of quantum wire materials. The results show that the inclusion of acoustic phonon confinement effects may be crucial for calculating accurate low-energy electron scattering rates in nanostructures. It is also demonstrated that the scattering rates may be significantly influenced by the direction of phonon propagation, especially for low-energy electrons. Furthermore, it has been found that there is a scaling rule governing the directional dependence of the scattering rates: the directions characterized by small Poisson ratios exhibit large scattering rates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363199
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  • 3
    Electronic Resource
    Electronic Resource
    Superconducting metastable phase in rapid quenched Y–Pd–B–C borocarbides : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5860-5862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid quenched (RQ) palladium-based borocarbides with large fractions of the superconducting phase (Tc(approximately-greater-than)20 K) have been obtained. Superconductivity is found to exist only in the RQ state. Thus, while the as cast YPd2B2C is nonsuperconducting, the RQ material superconducts and has an x-ray diffraction (XRD)-pattern characteristic of a face-centered cubic fcc lattice with a lattice parameter of 4.15 A(ring). A sequential annealing study shows decay of the superconducting phase above 750 °C which correlates well with the reduction in the integral intensities of the XRD fcc peaks. A tentative phase diagram for superconductivity in the Y–Pd–B–C systems is presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362151
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial La0.7Ba0.3MnO3 structures using ferromagnetic resonance (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2334-2338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have compared a single layer of La0.7Ba0.3MnO3 and a trilayer structure of SrTiO3/La0.7Ba0.3MnO3/SrTiO3, both grown epitaxially on a LaAlO3 substrate, using information obtained by ferromagnetic resonance (FMR). The trilayer samples have a more uniform magnetization and are not susceptible to environmental degradation. This may be due to the strain relief that the buffer SrTiO3 layer provides for the La0.7Ba0.3MnO3 layer. We have also studied the magnetic homogeneity of the trilayer structure as a function of the deposition temperature. The perpendicular FMR linewidth, Γ⊥, shows a clear window in the deposition temperature where the linewidth is 〈50 Oe. However, the parallel linewidth, Γ(parallel), is nearly ten times larger than Γ⊥ with only a weak dependence on the deposition temperature. This broadening of the parallel linewidth compared to the perpendicular linewidth can be explained by invoking a local unidirectional anisotropy in the plane of the film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363066
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of ultrathin GaAs/AlAs quantum well structures with an electric field (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8675-8681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study of the optical properties of GaAs/AlAs quantum well structures in the presence of an electric field is presented. In the first part of the article, interband transitions from the valence band to the conduction band are studied near the type-I to type-II transition point. In the second part, the effect of the electric field on intersubband transitions within the conduction band is considered. The band structure is calculated using a second-nearest-neighbor empirical sp3 tight binding method including spin–orbit effects. Interband and intersubband transition energies, optical matrix elements, and absorption coefficients are given as functions of the electric field. It is shown that the optical properties of these structures can be modified significantly with field near the anticrossing point. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362493
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  • 6
    Electronic Resource
    Electronic Resource
    New method for thermal desorption spectroscopy using field electron emission microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2573-2575 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a new method for thermal desorption spectroscopy using field electron emission microscopy. To investigate the validity of our method, we have performed hydrogen adsorption experiments on the well known W(100) and W(110) surfaces and also on W(310). The thermal desorption spectra of these systems show that this method permits the study of adsorption on various single crystal plans of a metal with one sample. This method also gives information about the dipole direction of the adsorbates directly from the thermal desorption spectrum without additional measurement of the work function change induced by adsorbates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147216
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  • 7
    Electronic Resource
    Electronic Resource
    Use of the program SHADOW in designing a capillary focusing beamline : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3379-3380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this report we consider the use of the program SHADOW for ray tracing different configurations of the PNC-CAT mircrofocus beamline. The emphasis is on the final design, which will include crystal and grazing incidence optics focusing onto the entrance of a long tapered glass capillary whose outlet diameter is of the order of one micron or less. The ray-tracing program has been especially valuable in comparing different configurations, determining the required stability of components, and optimizing the capillary profile. It has also been useful in evaluating the results of actual measurements on the throughput of long tapered capillaries fabricated of silica glass. Suggestions for improvements to SHADOW are given. We also present results of a compact pc-based capillary ray-tracing program for comparison. It allows us to use different profiles with minimal programming effort. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147316
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  • 8
    Electronic Resource
    Electronic Resource
    Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2722-2724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a molecular beam epitaxy system equipped with an inductively coupled radio frequency nitrogen plasma source, p-type GaN films were grown on sapphire substrates with no postgrowth treatment. Uniformity of the surface morphology and spatial homogeneity of the luminescence of the films were investigated using scanning electron microscopy and cathodoluminescence (CL) imaging, respectively. By examining the dependence of photoluminescence on the excitation laser power density at 6 and 300 K, three different emissions having different origins were identified. A blue emission at ∼3.25 eV is associated with shallow Mg impurities, while two different lower-energy emissions at ∼2.43 and ∼2.87 eV are associated with deep Mg complexes. The spatial distributions of the shallow and deep Mg impurities dominating the optical properties of the p-type GaN films were also examined along the growth direction by low- and room-temperature CL using an electron beam with a range of penetration depths © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117690
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  • 9
    Electronic Resource
    Electronic Resource
    Carrier capture in quantum well embedded quantum wire structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 360-362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a novel quantum wire (QWR) laser structure with improved carrier capture characteristics, where the carriers are injected into a quantum well (QWL) and subsequently recombine within an embedded QWR. The corresponding electron capture rates via polar optical phonon scattering are calculated for this system. An oscillatory behavior of the electron capture rate is observed as a function of the QWR thickness at the temperatures considered (77 K and 300 K). The amplitude of these oscillations also increases as the QWR width decreases. Our calculations show that the electron capture rate in the QWL embedded QWR structure can be improved by more than 30% when compared to single QWLs. Therefore, the proposed QWR laser design provides improved modulation bandwidth and optical gain over conventional QWL and QWR structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118060
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  • 10
    Electronic Resource
    Electronic Resource
    Lateral wet oxidation of AlxGa1−xAs-GaAs depending on its structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3357-3359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of 〈80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1−xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117305
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