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  • 2000-2004  (1)
  • 1995-1999  (2)
  • 1905-1909
  • 2001  (1)
  • 1998  (2)
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  • 2000-2004  (1)
  • 1995-1999  (2)
  • 1905-1909
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  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform wetting layer is clearly visible. Dark contrast features with a distinctly larger extension into growth direction mark the location of quantum dots. Individual quantum dots can be identified in high-resolution imaging both by lattice expansion and contrasts arising from their strain fields. Plan-view images show the coexistence of two classes of quantum dots with an average lateral size of ≤10 nm (area density 100 μm−2) and 10–50 nm (20 μm−2), respectively. The shape of the larger entities is pyramidlike. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120984
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    CuAu-type ordering in epitaxial CuInS2 films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 785-787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122001
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A two magnetron sputter deposition chamber for in situ observation of thin film growth by synchrotron radiation scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3344-3348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a sputter deposition chamber for the in situ study of film growth by synchrotron x-ray diffraction and reflectivity is reported. Four x-ray windows, sealed with low cost, nonhazardous Kapton, enable scattering both in the horizontal as well as in the vertical scattering planes. The chamber fits into a standard six-circle goniometer from Huber which is relatively widespread in synchrotron laboratories. Two miniature magnetron and additional gas inlets allow for the deposition of compound films or multilayers. Substrate heating up to 650 °C and different substrate bias voltage are possible. The performance of the chamber was tested with the deposition of high quality TiN films of different thicknesses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384432
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    Paper (German National Licenses)
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