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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4966-4973 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4286-4291 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically show the feasibility of optically and electrically pumped Hg-based vertical-cavity surface-emitting lasers (VCSELs) that emit at midwave-infrared wavelengths up to thermoelectric cooler temperatures. The maximum operating temperature is significantly enhanced by employing a multiple quantum-well active region with very thin (20–30 Å) HgTe wells engineered to yield a strong suppression of both Auger recombination and intervalence free-carrier absorption. Hg0.65Cd0.35Te/Hg0.1Cd0.9Te distributed Bragg reflectors are employed for one or both of the mirrors defining the optical cavity. Detailed numerical simulations of VCSELs emitting at λ(approximate)4.3 μm predict that for optical pumping at 1.06 μm, a maximum operating temperature of 220 K should be achievable for pulsed operation and 160 K in cw mode, with a cw power output of up to 2.6 mW per array element at 100 K. Injection VCSELs are predicted to operate up to 200 K for pulsed operation and 105 K for quasi-cw with a 10% duty cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2384-2391 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga1−xInxSb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11–14 cm−1), they increase rapidly with increasing temperature (to 50–120 cm−1 at 200 K). Comparison with a detailed numerical simulation shows that the internal losses play a much more important role than Auger recombination or carrier/lattice heating in limiting the laser performance at high temperatures. Calculations of the temperature-dependent intervalence absorption cross sections show that losses of the magnitude observed experimentally can easily occur if one does not take special care to avoid resonances in all regions of the Brillouin zone. Practical design guidelines are presented. The superlattice lasers yield maximum peak output powers of up to 6.5 W per facet at 100 K and 3.5 W per facet at 180 K, threshold incident pump intensities as low as 340 W/cm2 at 100 K, and Shockley–Read lifetimes 〉30 ns at 100 K. The Auger coefficients are suppressed (≤1.6×10−27 cm6/s at T=260 K) despite the intervalence resonances which produce the high internal losses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 711-713 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2370-2372 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 25-stage interband cascade laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing in pulsed mode up to 286 K. A peak output power of 160 mW/facet and a slope efficiency of 197 mW/A per facet (1.1 photons per injected electron) were measured at 196 K. Above 200 K, the characteristic temperature was higher (T0=53 K) and the threshold current densities lower than for a previously reported W interband cascade laser without the third hole quantum well. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3833-3835 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report temperature-dependent pulsed lasing performance, internal losses, and Auger coefficients for optically pumped type-II W lasers with wavelengths in the range of 3.08–4.03 μm at room temperature. All lased to at least 360 K, and produced 1.5–5 W peak power at 300 K. Internal losses at 100 K were as low as 10 cm−1, but increased to 90–360 cm−1 at 300 K. Room temperature Auger coefficients varied from 5×10−28 cm6/s at the shortest wavelength to 3×10−27 cm6/s at the longest. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Der Anaesthesist 47 (1998), S. 925-935 
    ISSN: 1432-055X
    Keywords: Schlüsselwörter Infektionsprävention ; Pneumonie ; Risiokofaktoren ; Desinfektion ; Key words Infection prevention and control ; Pneumonia ; Disinfection methods ; Risk factors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract The official German guidelines for prevention of nosocomial pneumonia were published by the Bundesgesundheitsamt, now called Robert-Koch-Institut, twelve years ago. The recently published official ”guidelines for prevention of nosocomial pneumonia” of the Centers for Disease Control and Prevention (CDC) are categorized according to scientific evidence. The American guidelines are very detailed and differ in some aspects from the official German guidelines. The purpose of the present paper is to inform the German anaesthesiologist about the official CDC guidelines and to provide a renewed background for the prevention of nosocomial pneumonia.
    Notes: Zusammenfassung Die offiziellen deutschen Richtlinien zur Prävention nosokomialer Pneumonien durch das frühere Bundesgesundheitsamt (jetzt Robert-Koch-Institut) sind mittlerweile 12 Jahre alt. Die kürzlich publizierten offiziellen Empfehlungen der amerikanischen Centers for Disease Control and Prevention (CDC) beruhen auf vorhandenen wissenschaftlichen Daten und sind daraufhin bezüglich ihrer Wertigkeit kategorisiert. Diese umfassenden Empfehlungen sind wesentlich ausführlicher als die offiziellen deutschen Richtlinien und weisen zu diesen teilweise beträchtliche Unterschiede auf. Mit dieser kurzen Darstellung der amerikanischen Richtlinien soll dem Kliniker für die eigene praktische Tätigkeit bezüglich vieler alltäglicher, aber keineswegs nebensächlicher Probleme eine fundierte Entscheidungshilfe zur Verfügung gestellt werden.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-055X
    Keywords: Schlüsselwörter Infektionsprävention ; Desinfektion ; Sepsis ; Komplikation ; Risikofaktoren ; Katheterwechsel ; Key words Infection prevention and control ; Disinfection methods ; Equipment Contamination ; Risk factors ; Septicemia ; catheters ; indwelling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract The official German guidelines for prevention of intravascular-device-associated infections were published by the Bundesgesundheitsamt, now called the Robert-Koch-Institut, 12 years ago. The recently published official „Guidelines for Prevention of Intravascular-Device Associated Infections” of the Centers for Disease Control and Prevention (CDC) are categorized according to scientific evidence. The American guidelines are very detailed and differ in some aspects from the offical German guidelines. The purpose of the present paper is to inform the German-speaking anaesthesiologist about the official CDC guidelines and to provide an update on the prevention of intravascular-device-associated infections.
    Notes: Zusammenfassung Die offiziellen deutschen Richtlinien zur Prävention katheterassoziierter Infektionen durch das frühere Bundesgesundheitsamt (jetzt Robert-Koch-Institut) sind mittlerweile 12 Jahre alt. Die kürzlich publizierten offiziellen Empfehlungen der amerikanischen Centers for Disease Control and Prevention (CDC) beruhen auf vorhandenen wissenschaftlichen Daten und sind daraufhin bezüglich ihrer Wertigkeit kategorisiert worden. Diese umfassenden Empfehlungen sind wesentlich ausführlicher als die offiziellen deutschen Richtlinien und weisen zu diesen teilweise beträchtliche Unterschiede auf. Mit dieser kurzen Darstellung der amerikanischen Richtlinien soll dem Kliniker für die eigene praktische Tätigkeit bezüglich vieler alltäglicher, aber keineswegs nebensächlicher Probleme eine fundierte Entscheidungshilfe zur Verfügung gestellt werden.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0428
    Keywords: Keywords IRS-2 gene ; microsatellite marker ; radiation hybrid (RH) mapping ; affected sib-pair analysis ; Ashkenazi Jews ; Type II diabetes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Insulin receptor substrate 2 (IRS-2) is a substrate of the insulin receptor and mediates the action of the insulin. Disruption of the IRS-2 gene in mice results in peripheral insulin resistance and relative insulin deficiency. It is therefore possible that defects in the IRS-2 gene contribute to Type II (non-insulin-dependent) diabetes mellitus. We have examined the gene for evidence of linkage to Type II diabetes in Ashkenazi Jewish families. Radiation hybrid panel mapping was used to refine the map position of the IRS-2 gene and, in the absence of polymorphic markers within the gene, to identify nearby markers. The IRS-2 gene was placed 23cR from the marker D13S1265 on chromosome 13q34. 200 affected sibpairs were genotyped for three markers across the region. Nonparametric linkage analysis (GENEHUNTER) used with this data found no evidence of excess allele sharing in the IRS-2 gene region. We therefore concluded that variation in the IRS-2 gene is unlikely to contribute to Type II diabetes in this discrete Caucasian population. [Diabetologia (1998) 41: 1389–1391]
    Type of Medium: Electronic Resource
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