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  • 1
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in heat treated silver oxide nanoparticles (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8541-8544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag2O particles of sizes varying from 6.0 to 16 nm have been prepared by a chemical method. These have been subjected to a heat treatment at temperatures varying from 533 to 623 K. The optical absorption spectra of the heat treated particles dispersed on a glass substrate have been delineated. The absorption peak shows a maximum in wavelength as a function of heat treatment temperature. This has been explained on the basis of formation of nanometer-sized silver layer on the Ag2O particles and the consequential electron confinement within the same. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373575
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  • 2
    Electronic Resource
    Electronic Resource
    A simple technique for height calibration for z piezo with Angstrom resolution of scanning probe microscopes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 589-590 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a simple method of preparing a "calibration standard" of nanometer order for the height calibration of z piezo scanner used in scanning probe microscopes. The calibration standard can be accurately characterized using the grazing incidence x-ray reflectivity technique. This method enables one to calibrate displacement/voltage (Å/V) of the z piezo scanner with Angstrom resolution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150250
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  • 3
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in simple orthorhombically strained silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4717-4724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electron transport properties of simple orthorhombically strained silicon studied by density-functional theory and Monte Carlo simulation. The six degenerate valleys near X points in bulk silicon break into three pairs with different energy minima due to the orthorhombic strain. The degeneracy lifting causes electron redistribution among these valleys at low and intermediate electric fields. Thus the drift velocity is enhanced under an electric field transverse to the long axis of the lowest valleys. Orthorhombically strained layers should be of interest in vertical SiGe-based heterostructure n-channel–metal–oxide–semiconductor field effect transistors. The simple orthorhombically strained Si grown on a Si0.6Ge0.4 sidewall has a low-field mobility almost twice that of bulk Si and an electron saturation velocity approximately 20% higher. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311304
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of ZrO2 gate dielectric on SiGe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 502-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125801
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  • 5
    Electronic Resource
    Electronic Resource
    Relations between Rydberg-valence interactions in the O2 molecule (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 2214-2223 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a single-configuration formulation, analytical expressions are derived for the (X 2Πg) nsσg, npπu, and npσu Rydberg-valence interaction matrix elements in O2. In addition, new results from diabatic, coupled-channel deperturbations of experimental data dependent on these interactions are reported for n=3 and 4. Using these results, the large differences in magnitude between the Rydberg-valence couplings for the constituent states of the npπu Rydberg complex that are predicted by the analytical expressions are verified experimentally. Effective values for several two-electron integrals are obtained semiempirically through comparison between analytical expressions and deperturbed experimental values for the Rydberg-state energies and Rydberg-valence couplings, allowing predictions to be made for the spectroscopy of the npπu 1Σu− Rydberg states which have yet to be observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.482035
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  • 6
    Electronic Resource
    Electronic Resource
    Identification of an Al–Ni–O precipitate in combustion-synthesized NiAl (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 1217-1222 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The complete identity of a second-phase precipitate detected by transmission electron microscopy in combustion-synthesized NiAl was established. The crystal structure, including the point group, the space group and the lattice parameters, was determined by convergent and selected-area electron diffraction techniques. Energy dispersive X-ray spectroscopy was used for the determination of the chemical composition. Analysis established the phase to be the solid solution of NiO in Al2O3 and presented evidence of the hitherto unreported room-temperature solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889800008505
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  • 7
    Electronic Resource
    Electronic Resource
    Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 338-342 (May 2000), p. 1279-1282 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.1279.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence in Porous Silicon—Surface vs. Bulk (2000)
    Springer
    Journal of porous materials 7 (2000), S. 283-286 
    Details
    ISSN: 1573-4854
    Keywords: porous Si ; luminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The mechanism of luminescence in porous silicon still remains poorly understood. The main point of controversy is whether the luminescence is due to recombination in the quantum size structures that constitute porous silicon or whether it is dominated by surface recombination. In this paper, we present evidence that emphasises the role that surface recombination plays in the luminescence of porous silicon. In this framework, we also attempt to reconcile the resonant luminescence data (which argues for “ bulk” recombination) with our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009688232248
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  • 9
    Electronic Resource
    Electronic Resource
    Involvement of a natural transport system in the process of efflux-mediated drug resistance in Mycobacterium smegmatis (2000)
    Springer
    Molecular genetics and genomics 262 (2000), S. 949-956 
    Details
    ISSN: 1617-4623
    Keywords: Key words ABC transporter ; Fluoroquinolone ; Multidrug resistance ; Mycobacteria ; Phosphate-specific transporter
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The phosphate-specific transporter (Pst) in bacteria is a multi-subunit system which belongs to the ABC family of transporters. The gene forms part of an operon and it is involved in phosphate uptake in prokaryotes. Its import function is known to be operative only under conditions of phosphate starvation. However, we found overexpression of this transporter in a Mycobacterium smegmatis strain selected for ciprofloxacin resistance (CIPr) which was grown under conditions in which the phosphate-scavenging function of this operon was inoperative. In CIPr cells, active efflux of the drug plays a predominant role in conferring high levels of fluoroquinolone resistance. We therefore investigated the role of this transporter in the process of efflux-mediated drug resistance by inactivating the pst operon in the CIPr strain. Phenotypic characterization of the resulting strain, CIPrd, showed a striking reduction in the minimal inhibitory concentration (MIC) of ciprofloxacin and in the drug extrusion profile as well. Genotype analysis, on the other hand, revealed partial disruption of the pst operon in CIPrd as a consequence of transporter gene amplification. Furthermore, disruption of this operon in wild-type cells resulted in hypersensitivity to ciprofloxacin and other xenobiotics to which CIPr cells exhibited cross-resistance. Thus our results provide strong evidence that Pst is a natural membrane transport system that has the ability to promote drug efflux in addition to its phosphate-scavenging function in the CIPr strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00008663
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  • 10
    Electronic Resource
    Electronic Resource
    Correlations between D and $${\overline D}$$ mesons produced in 500 GeV/cπ−-nucleon interactions (2000)
    Springer
    EPJ direct 1 (2000), S. 1-67 
    Details
    ISSN: 1435-3725
    Keywords: 12.38.-t ; 13.85.-t ; 13.87.Ce ; 13.87.Fh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present a study of correlations between D and $${\overline D}$$ mesons produced in 500 GeV/cπ−-nucleon interactions, based on data from experiment E791 at Fermilab. We have fully reconstructed 791 ± 44 charm meson pairs to study correlations between the transverse and longitudinal momenta of the two D mesons and the relative production rates for different types of D meson pairs. We see slight correlations between the longitudinal momenta of the D and the $${\bar D}$$ , and significant correlations between the azimuthal angle of the D and the $${\bar D}$$ . The experimental distributions are compared to a next-to-leading-order QCD calculation and to predictions of the PYTHIA/JETSET Monte Carlo event generator. We observe less correlation between transverse momenta and different correlations between longitudinal momenta than these models predict for the default values of the model parameters. Better agreement between data and theory might be achieved by tuning the model parameters or by adding higher order perturbative terms, thus contributing to a better understanding of charm production. The relative production rates for the four sets of charm pairs, $$D^0{{\overline D}^0}, D^0 D^{-}, D^+{{\overline D}^0}, D^+ D^{-}$$ as calculated in the PYTHIA/JETSET event generator with the default parameters, agree with data as far as the relative ordering, but predict too many $$D^+ {{\overline D}^0}$$ pairs and too few $$D^+ D^{-}$$ pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s101059900c0004
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