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  • 2000-2004  (24)
  • 1990-1994
  • 2001  (24)
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  • 2000-2004  (24)
  • 1990-1994
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  • 1
    Electronic Resource
    Electronic Resource
    Crystalline orientation effects on the electronic transport properties of LaMnOy thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4877-4879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial and polycrystalline LaMnOy thin films on a LaAlO3 substrate by the off-axis magnetron sputtering technique and investigated the crystalline orientation effects on the electronic transport properties. Lattice mismatch, crystalline quality, resistivity, resistivity transition temperature Tp, and magnetoresistance (MR) in epitaxial films exhibit crystalline orientation dependence. The largest Tp and MR are observed in the (111) oriented films. In the polycrystalline films, the Tp is smaller than that of the (011)/(111) oriented films but higher than that of the (001) oriented films. The MR increases with decreasing temperature in contrast to that of the epitaxial films in which the MR experiences a peak near Tp. Oxygen annealing decreases MR and resistivity, and increases Tp in the order: (111)〈(011)〈(001)〈(polycrystalline). The above results suggest that the structure and composition of the epitaxial films improve in the order: (001)〈(011)〈(111). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402665
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  • 2
    Electronic Resource
    Electronic Resource
    Interface state generation after hole injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 328-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377305
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  • 3
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350616
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen induced positive charge generation in gate oxides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1911-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384860
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of pressure on the microstructure of α-Fe/Sm2(Fe, Si)17Cx nanocomposite magnets (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 477-481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of pressure on the microstructure of α-Fe/Sm2(Fe, Si)17Cx nanocomposite magnets has been studied by annealing amorphous Sm8Fe85Si2C5 alloy under pressures up to 6 GPa at 923 K. The high-pressure experiments were carried out in a belt-type apparatus. Experimental results show that, with increasing pressure from normal pressure to 6 GPa, the grain size of the α-Fe and Sm2(Fe, Si)17Cx phases in the α-Fe/Sm2(Fe, Si)17Cx nanocomposites decreases, from 30.6 to 6.4 nm for the former and from 28.7 to 5.8 nm for the latter. The volume fraction of Sm2(Fe, Si)17Cx increases as pressure increases. The α-Fe/Sm2(Fe, Si)17Cx nanocomposite magnets prepared under 4 GPa have a significant increase in both coercivity and remanent magnetization as compared to those prepared under normal pressure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328782
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  • 6
    Electronic Resource
    Electronic Resource
    Crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 496-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy has been investigated. As the alloy is heated to 900 °C, the crystalline phases of the alloy are composed of α-Fe phase and Sm2(Fe, Si)17Cx. At the beginning of crystallization the activation energy of the α-Fe phase is about 425 kJ/mol, it remains relatively constant as the crystallized fraction of the α-Fe phase is below 70%, and then it declines with increasing the crystallized fraction. When the crystallized fraction of the Sm2(Fe, Si)17Cx is below 50%, the activation energy of crystallization of the phase remains between 518 and 530 kJ/mol, and then decreases with the crystallized fraction. The crystallization behavior of the α-Fe phase and Sm2(Fe, Si)17Cx essentially results in the formation of an α-Fe/Sm2(Fe, Si)17Cx composite microstructure with a coarse grain size in annealed Sm8Fe85Si2C5 alloy, which is attributed to a difficult nucleation and an easy growth for both the α-Fe phase and Sm2(Fe, Si)17Cx in the alloy. Cu and Nb can be used to change the crystallization behavior of the α-Fe phase in the amorphous Sm8Fe85Si2C5 alloy, which is helpful to the formation of the α-Fe/Sm2(Fe, Si)17Cx nanocomposite microstructure with a fine grain size for the α-Fe phase in the alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330769
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication and temperature dependence of the resistance of single-crystalline Bi nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3847-3851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline Bi nanowires with diameters ranging from 20 to 70 nm were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes. X-ray diffraction and selected area electron diffraction investigations revealed that the nanowires are essentially single crystalline and highly oriented. The temperature dependence of zero-field resistance of different diameter nanowires indicated that these Bi nanowires undergo a semimetal–semiconductor transition due to two-dimensional quantum confinement effects. The resistance maximum was observed at 50 K in zero magnetic field for 20 nm Bi nanowires, while the resistance minimum at 258 K for 50 nm Bi nanowires, due to the quantum size effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352562
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication and photoluminescence of ordered GaN nanowire arrays (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 5714-5717 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Large-scale of crystalline GaN nanowires (diameter∼50 nm) have been fabricated through chemical-vapor deposition in the nanochannels of the anodic alumina template. X-ray diffraction and selected area electron diffraction pattern investigations indicate that the nanowires are single crystal with hexagonal wurtzite structure. A typical scanning electron microscopy image and the energy dispersive x-ray spectroscopy results indicate that indium nanoparticles only act as catalyst in GaN nanowires growth. At room temperature, photoluminescence spectrum of the GaN nanowire arrays shows a visible broadband with three peaks, which are located at about 363, 442, and 544 nm. The light emission may be attributed to GaN band-edge emission, the existence of defects or surface states, and the interaction between the ordered GaN nanowires and anodic alumina membrane. The growth mechanism of crystalline GaN nanowires is discussed. The method makes it possible to synthesize other nitride nanowire arrays. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407005
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  • 9
    Electronic Resource
    Electronic Resource
    Hot electron generation via vacuum heating process in femtosecond laser–solid interactions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2925-2929 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot electron generation by the vacuum heating process has been studied in the interaction of 150 fs, 5 mJ, 800 nm P-polarized laser pulses with solid targets. The measurements have suggested that the "vacuum heating" is the main heating process for the hot electrons with high energies. The energy of the vacuum-heated hot electrons has been found to be higher than the prediction from the scaling law of resonance absorption. Particle-in-cell simulations have confirmed that the hot electrons are mainly generated by the vacuum heating process under certain experimental conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371956
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  • 10
    Electronic Resource
    Electronic Resource
    Electron acceleration by static and oscillating electric fields produced in the interaction between femtosecond laser pulses and solid targets (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1025-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of modest, femtosecond (fs) laser pulses with solid targets is studied with particle-in-cell (PIC) simulations. A bi-temperature distribution of hot electrons is found. The first hot electron temperature can be attributed to the resonance absorption of the laser field, whereas the second hot electron temperature is identified to be due to the combined acceleration by the static electric field in front of the target and by the laser induced oscillating electric field in the thin plasma layer between the vacuum and the target. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1348036
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