ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have carried out the growth and basic characterization of isotopically enriched 4HSi13C crystals. In recent years the growth of 13C enriched 6H-SiC has been performed in order tocarry out fundamental materials studies (e.g. determination of phonon energies, fundamentalbandgap shift, carbon interstitial defect study, analysis of the physical vapor transport (PVT) growthprocess). For electronic device applications, however, the 4H-SiC polytype is the favored material,because it offers greater electron mobility. In this paper we present the growth of 4H-Si13C singlecrystals with up to 60% of 13C concentration. From a physical point of view we present first resultson phonons as well as the fundamental bandgap energy shift due to 13C incorporation into the SiClattice
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.13.pdf
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