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  • 2005-2009  (5)
  • 2000-2004  (27)
  • 1995-1999  (74)
  • 1960-1964  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Influence of electronic states on precipitation of metallic As clusters in LT-GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6016-6020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of electronic states of the semiconductor matrix on the precipitation of metallic As clusters in GaAs epilayers grown by molecular beam epitaxy at low temperatures were studied. From x-ray diffraction and Hall effect measurements, the presence of free carriers was found to occur in a certain time after the start of the coarsening stage of the precipitation. Transmission electron microscope observations indicate that redistributions of As clusters between the doped and undoped regions starts at the same time with the appearance of free carriers. Redistributions of As clusters occurs in pn junction structures in such a way that depletion zones of the pn junctions become free from As clusters, leading to close correlation of widths of precipitate free zones with those of the depletion zones of the pn junctions for various dopant concentrations. These observations are explained with a tendency of As metal clusters of reducing free carriers in the surrounding semiconductor matrix and hence keeping it as an intrinsic semiconductor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319324
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  • 2
    Electronic Resource
    Electronic Resource
    Construction and beam experiment of a compact storage ring at MELCO : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1968-1970 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact storage ring has been developed for industrial research such as x-ray lithography and material analysis. This machine is of a racetrack type with two superconducting bending magnets and only two normal conducting quadrupole magnets. The circumference is as short as 9.2 m. One quadrupole magnet per cell contributes to making the smaller machine. The injector is a synchrotron, and a full energy injection of 600 MeV is performed. The bending magnets excite a field of 3.5 T, and are operated in a persistent current mode. A decrease in a coil current is ΔI/I〈3×10−3/year. The helium consumption is as low as 2 l/h for two magnets. An iron shield of the magnet decreases a leakage flux to a terrestrial level at a point 3 m from the magnet. A beam current of 380 mA has been stored with no beam instability in spite of there being no correction of the chromaticities. Beam emittances were obtained from measured beam sizes and were in good agreement with calculated values. The coupling coefficient εy/εx is calculated as around 0.04. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145772
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  • 3
    Electronic Resource
    Electronic Resource
    Propagation and reflection properties of magnetoelastic wave in FeSiB amorphous wire : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4653-4655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Propagation and reflection properties of magnetoelastic waves in Fe77.5Si7.5B15 amorphous wires are studied. The attenuation constant increases with increasing the driving frequency of the wave. As the attenuation constant of the wave driving at 500 kHz is quite small (0.18 m−1), the wave is expected to be observed after the propagation of 20 or 30 m. As for the reflection, the magnetoelastic wave is reflected with the efficiency as much as 0.9 at the driving frequency below 2 MHz using a clamp as reflector. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361694
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of magnetization dynamics and magnetoimpedance in FeCoSiB and FeSiB amorphous wires : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6542-6544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to observe magnetization dynamics in amorphous wires is described. When an ac current passes through the amorphous wire, voltages induced between both ends of the wire and in a pickup coil wound around the wire are observed. These voltages indicate circumferential and axial components of magnetization changes in the wire, respectively. Observations in a Co-rich wire having slightly negative magnetostriction and an Fe-rich wire having positive magnetostriction under various bias fields showed quite different wave forms which indicate their domain structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361940
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  • 5
    Electronic Resource
    Electronic Resource
    Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5125-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of oxygen on H-terminated Si(100) surfaces has been investigated by high-resolution electron energy loss spectroscopy (HREELS). Adsorptions of atomic oxygen occur even at room temperature. Si-OH stretching and Si-O-Si (B1) vibrational modes are observed in HREELS spectra, which indicates that atomic oxygen is adsorbed on sites of Si—H bonds and Si—Si back bonds. On the other hand, H-terminated surfaces are very stable for molecular oxygen, which cannot adsorb until 380 °C on the surface. A dissociative adsorption of molecular oxygen is observed above 380 °C and the activation energy of the adsorption is 2.0 eV at 380–450 °C. This value coincides with the desorption energy of hydrogen atoms from a Si(100) surface with the monohydride phase. These results indicate that the dangling bonds are essential to the adsorption of molecular oxygen on Si(100) surfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359323
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  • 6
    Electronic Resource
    Electronic Resource
    Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121781
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  • 7
    Electronic Resource
    Electronic Resource
    7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1614-1615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 1.55 μm multiple quantum well laser heteroepitaxially grown on Si substrate operates under the severe aging condition of the light output of 5 mW/facet at 50 °C. The laser has been operating for more than 7000 h. The threshold current and the slope efficiency of the laser on Si at 20 °C are 32 mA and 0.19 W/A, respectively. The maximum operation temperature is above 80 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118632
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  • 8
    Electronic Resource
    Electronic Resource
    Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6725-6728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368999
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  • 9
    Electronic Resource
    Electronic Resource
    Physical and electrical properties of Ge-implanted SiO2 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3524-3528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor structures with a Ge nanocrystal embedded in SiO2 films were fabricated by Ge+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO2 films. The Ge size and its density were estimated to 3–5 nm and 1×1012/cm2, respectively. Photoluminescence spectra showed a strong blue–violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance–voltage characteristics exhibit the flatband voltage shifts of 1.02 V after the electron injection into the SiO2/Ge/SiO2 potential well. An anomalous leakage current was clearly observed in the current–voltage characteristics. The precise simulation of quantum electron transport in the SiO2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO2/Ge/SiO2 double-well band structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399024
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  • 10
    Electronic Resource
    Electronic Resource
    Contrast mechanisms in scanning ion microscope imaging for metals (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contrast of the secondary electron images in scanning ion microscopy (SIM) is compared with that in scanning electron microscopy (SEM) with ultrahigh vacuum for Al, Cu, Ag, and Au metals deposited on the Si(100) clean surface. The order of the secondary electron yields as a function of the atomic number (Z2) for ion bombardment is opposite to that for electron bombardment. The brightness of the secondary electron images observed by a focused Ga+ ion beam at 30 keV decreases with increasing Z2, while that by the electron beam increases with Z2. On the other hand, the order of the total secondary ion yields in SIM increases with Z2. The secondary electron image observed by a focused Ar+-ion beam at 3 keV shows the similar contrast to that of the Ga+-ion beam. The different Z2 dependence of the secondary electron yields between SEM and SIM was quantitatively confirmed by the total secondary electron spectra and is discussed based on the range profile below the surface, and it is concluded that the decrease of the secondary electron yields in SIM is attributed to the increase of the reflected ions at the surface with increasing Z2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121872
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