ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
AlGaN/GaN HFETs were fabricated around micropipes and on a domain boundaryin a semi-insulating silicon carbide (SI-SiC) substrate and the DC characteristics of thefabricated devices were measured. Devices around micropipe showed no pinch-off or largegate leakage. The devices on the domain boundaries showed no degradation in theperformances, even though an X-ray topographic analysis indicated that crystal imperfections,due to the defects, propagated to the GaN layer across the hetero interface. Based on theseresults, we concluded that micropipe degrades the DC characteristics and that the domainboundary does not affect the DC characteristics. From Raman analysis on the devicesaround the micropipes, these degradations could be attributed to the free carriers introducedinto the GaN crystal by the micropipes
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.1043.pdf
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