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  • 1
    Electronic Resource
    Electronic Resource
    Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1780-1782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) lasing operation with a threshold current (Ith) of 3 mA and a pulsed Ith as low as 1.5 mA were achieved in mushroom structure surface- emitting lasers utilizing a 300 A(ring) GaAs single quantum well as an active layer and an AlAs/Al0.1Ga0.9As multilayer as the top and the bottom distributed Bragg reflectors. A series resistance of 250 Ω was obtained on devices with an 8×8 μm2 active region using selective zinc diffusion. A differential quantum efficiency of 12%–20% and a maximum cw light output power exceeding 1 mW were achieved. The emission wavelength was 860 nm with a spectral linewidth of ∼0.5 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105089
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  • 2
    Electronic Resource
    Electronic Resource
    Ohmic heating and series resistance of a vertical-microcavity surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of investigations on the transient heating and series resistance of a vertical-microcavity surface-emitting (VMSE) laser with an air-bridge structure. Transient temperature broadening of the lasing spectrum and chirping of the current versus voltage characteristic are analyzed experimentally and theoretically. We believe that the experiments provide us valuable information on the severity of the heating problems in VMSE laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105616
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  • 3
    Electronic Resource
    Electronic Resource
    Reorientational diffusion and internal rotation in trichloroethane (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 2702-2705 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100369a085
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  • 4
    Electronic Resource
    Electronic Resource
    Inverse parabolic quantum well and its quantum-confined Stark effect (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6247-6250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An inverse parabolic quantum well was successfully grown by molecular-beam epitaxy using a digital compositional grading superlattice composed of Al0.36Ga0.64As/GaAs. The photoluminescence and photocurrent measurements for this structure gave a good agreement between experimental and theoretical results. Large Stark shift and amplitude reduction of 1e-1hh exciton resonance under applied electric field were found in the photoluminescence spectra, which are substantially larger than the conventional square quantum well. These properties benefited from the concept of local-to-global state transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355167
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  • 5
    Electronic Resource
    Electronic Resource
    FeAlN/SiO2 and FeAlN/Al2O3 multilayers for thin-film recording heads (invited) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6212-6217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeAlN films and FeAlN/SiO2 and FeAlN/Al2O3 multilayer films have been studied as potential high moment head materials. The magnetic properties of FeAlN films on glass are similar to those of FeN, but the Al decreases the saturation magnetostriction constant and shifts the minimum coercivity point to a higher N content. Compared with the single layers, FeAlN/SiO2 and FeAlN/Al2O3 multilayers have reduced coercivity, and their permeance spectra have increased roll-off frequencies. In the multilayers, a 4πMs of 18–22 kG, a coercivity of 0.3 Oe, and a saturation magnetostriction constant smaller than 2×10−6 are obtained. These magnetic properties are very stable to annealing up to 360 °C, due to the presence of the Al. FeAlN and FeN single and multilayers show localized corrosion at defect sites when subjected to extended periods of a high-humidity/high-temperature test, but the corrosion is slow. Films with comparable properties to those on glass have been obtained on n-Si substrates; films on alumina-TiC substrates have also been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352702
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  • 6
    Electronic Resource
    Electronic Resource
    Electrochemical capacitance-voltage profiling of n-type ZnSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352016
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  • 7
    Electronic Resource
    Electronic Resource
    High moment soft amorphous CoFeZrRe thin-film materials (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5114-5116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoFeZrRe thin films have been deposited and studied systematically for suitability as a material for thin-film recording heads. The addition of Fe and Re results in a higher degree of crystallinity, thus increasing the coercivity. The addition of Fe increases the magnetostriction of the films while the addition of Re decreases the magnetostriction. The large magnetostriction of films with a large Fe content results in high coercivity. Rotating field annealing is very effective in lowering the coercivity of the magnetostrictive films because of the relaxation of internal stresses. By properly choosing the composition of Fe and Re, we have deposited very soft magnetic thin films with a saturation magnetization of 14 kG, coercivity of 0.3 Oe, and near-zero magnetostriction. The input power dependence of the magnetostriction of this series of films is observed, although x-ray fluorescence analysis does not show any apparent compositional variations. Finally, the anisotropy field of the these films can be decreased by rotating field annealing from 25 to 5 Oe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346065
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  • 8
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7/NdGaO3/YBa2Cu3O7 trilayers by modified off-axis sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7543-7548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial YBa2Cu3O7−δ (YBCO) thin films were achieved by a modified off-axis sputtering technique with high deposition rates (3.3 nm/min). The film quality and the deposition rate depended crucially on the target-to-substrate separation. Epitaxial YBCO/NdGaO3(NGO)/YBCO trilayers were successfully grown onto SrTiO3, Y-ZrO2, and LaAlO3 substrates by dc and rf sputtering. The epitaxial relations were found to be [001]YBCO//[001]NGO, [100]YBCO, or [010]YBCO//[110]NGO and [001]YBCO//[110]NGO, [100]YBCO, or [010]YBCO//[001]NGO, where the latter orientation relationship was dominating. Subsequent top YBCO layers grew c axis oriented independently of the two epitaxial orientations of the NGO. The orientation relationships between YBCO and NGO were the same. Auger electron depth profiles and transmission electron microscopy indicated that the interdiffusion at the interface between the YBCO and NGO layers was not strong even at 740 °C. The superconducting transition temperatures of the top and bottom YBCO layers were about the same as that of YBCO single layers, i.e., 87–90 K. Scanning electron microscopy of the surface morphologies of the YBCO and the NGO showed that a smaller substrate-target distance resulted in smoother films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354002
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen-doped iron-film-based laminated materials for thin-film recording heads : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5625-5627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied nitrogen-doped iron (FeN) multilayer films aiming to achieve very small coercivity and near-zero magnetostriction simultaneously by varying the multilayer structure and sputtering parameters used to deposit the FeN layers. Multilayers using SiO2, NiFe, and CoZrRe have been studied. Films with a saturation magnetization of above 20 kG, a coercivity of 0.4 Oe, a magnetostriction constant of less than 5 × 10−7, and a hard-axis dc permeability of 4000 have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347943
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of (111) strained layers: Growth, photoluminescence, and internal electric fields (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5531-5538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that AlAs, AlGaAs, and AlInAs layers grown on 2° misoriented (111)B GaAs substrates by molecular beam epitaxy are much smoother than corresponding (111)GaAs layers. The quality of Al containing (111)B layers is further demonstrated by the narrow (65 A(ring)) photoluminescence peak from an AlAs/Al0.5In0.5As strained multiquantum well structure. The photoluminescence spectra of this structure is considered in detail, with particular attention paid to Stark effects associated with strain-generated internal electric fields. Spectral movement of the photoluminescence peak as a function of excitation intensity suggests the attainment of self-biased strained quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350527
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