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  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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  • 2
    Electronic Resource
    Electronic Resource
    Nanoporous structure of sputter-deposited silicon oxide films characterized by positronium annihilation spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1704-1706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positronium annihilation was applied to characterize the nanoporous structure of thin silicon oxide films sputter-deposited at different argon pressures ranging from 0.1 to 2.0 Pa. At higher argon pressures, the 3γ decay probability of ortho-positronium (o-Ps) was substantially enhanced. A comparison of this result with that obtained for capped samples indicated that: (a) 3γ annihilation is due to the intrinsic decay of o-Ps diffusing out from the film into vacuum and (b) films deposited at high argon pressures contain highly connected, open pores. Positron lifetime spectroscopy measurements on the capped films showed that the characteristic size of the pores can be as large as 2.6 nm, depending on the argon pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428787
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  • 3
    Electronic Resource
    Electronic Resource
    Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescence (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 404-410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposited polymer-like a-C:H films using the plasma-enhanced chemical vapor deposition technique and characterized film microstructure by variable-energy positron lifetime spectroscopy, photoluminescence (PL), and UV-visible absorption spectroscopy. It was confirmed that PL occurs from a chromophore in a sp2 cluster as a result of fast recombination of a photoexcited electron-hole pair. Positron annihilation lifetime spectroscopy showed that positronium (Ps) formation takes place via electron-positron recombination in the sp3 matrix. The lifetime of ortho-positronium (o-Ps) in our a-C:H films was similar to that in polyethylene, indicating their polymer-like nature. The relative PL efficiency increased by about an order of magnitude with increasing film band gap from 1.3 to 3.4 eV, which can be related to the decreasing concentration of nonradiative centers. On the other hand, Ps formation was much less influenced by the band gap and nonradiative centers. Comparison of this result with that for polyethylene mixed with carbon-black nanoparticles, where a considerable reduction in Ps formation was observed, showed that nonradiative centers were of a different nature from the defects on the carbon nanoparticle surface. This work demonstrated the usefulness of positron lifetime spectroscopy combined with optical measurements to study the nanostructure of a-C:H. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378063
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  • 4
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetoresistance, Hall effect, and thermoelectric power in spin valves (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5927-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of the magnetoresistance (MR) on two groups of spin-valve multilayers, NiO/NiFe/Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of specular scattering at interfaces is not the origin of the large MR. For the field direction almost perpendicular to the plane, we found a sensitive angular dependence of MR along with a large unidirectional anisotropy. To sort out any specific characteristics of the spin-valve system compared to the multilayers, thermoelectric power and Hall effect have been investigated for the first time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367457
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  • 6
    Electronic Resource
    Electronic Resource
    GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN was performed by low-pressure metalorganic vapor phase epitaxy using a mask-patterned GaN epitaxial layer on a (0001) sapphire substrate. GaN hexagonal microprisms of 5–16 μm in diameter, with smooth vertical facets and no ridge growth, were fabricated on a (0001) sapphire substrate. This vertical {11¯00} facet of GaN was parallel to a {112¯0} face of the sapphire substrate. Both the use of an epitaxial GaN layer on the sapphire substrate and low working pressure contributed to obtaining smooth top and vertical facet surfaces. Also, the stripe structures of GaN were obtained that had a rectangular cross section. Moreover, the selection of the mask-patterning direction was found to be important because of the 30° rotation of the crystallographic orientation between the GaN layer and the sapphire substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119379
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  • 7
    Electronic Resource
    Electronic Resource
    Carbamazepine-induced hypersensitivity syndrome associated with transient hypogammaglobulinaemia and reactivation of human herpesvirus 6 infection demonstrated by real-time quantitative polymerase chain reaction (2003)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 149 (2003), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Drug-induced hypersensitivity syndrome (HS) is a rare but severe disease with multiorgan failure. Many different precipitating factors have been reported, but the pathophysiology of HS remains unknown. However, the association of the human herpesvirus (HHV) family, particularly of HHV-6, has recently been reported in patients with HS. We report a 14-year-old boy who was diagnosed as having carbamazepine-induced HS based on the clinical course, laboratory data and results of drug-induced lymphocyte stimulation tests. In addition, the reactivation of HHV-6 was demonstrated by real-time quantitative polymerase chain reaction and by significantly increased levels of the specific antibody in his paired sera. Furthermore, transient hypogammaglobulinaemia was detected in the early stage of the disease. In addition, serum levels of interferon-γ, interleukin (IL)-6, IL-5 and eosinophil cationic protein, which were increased on admission, decreased dramatically after steroid therapy. This is the first report of carbamazepine-induced HS associated with reactivation of HHV-6, transient hypogammaglobulinaemia, increased serum levels of inflammatory cytokines and activated eosinophils. This case might contribute to the understanding of the pathophysiology of HS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2003.05368.x
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  • 8
    Electronic Resource
    Electronic Resource
    Stevens–Johnson syndrome associated with azithromycin followed by transient reactivation of herpes simplex virus infection (2004)
    Oxford, UK : Munksgaard International Publishers
    Allergy 59 (2004), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1398-9995.2003.00336.x
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  • 9
    Electronic Resource
    Electronic Resource
    Reduction of Staphylococcus aureus in atopic skin lesions with acid electrolytic water - a new therapeutic strategy for atopic dermatitis (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 52 (1997), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The subjects studied were 22 pediatric patients newly diagnosed with atopic dermatitis (AD); 11 were treated with acid electrolytic water (AEW), which has a strong bactericidal activity (AEW group), and the other 11 with tap water (placebo group). AEW or tap water, 1 ml/cm2 (body surface area), was sprayed on their skin lesions with a spray gun each twice a day for a week. There were no significant differences between the two groups in regard to sex, age, serum IgE, peripheral eosinophil counts, grading scores of AD, and duration of AD. The study was designed as a randomized, placebo-controlled, double-blind clinical trial. Colony counts of Staphylococcus aureus on skin lesions in the AEW group, both 3 min after spraying (P 〈 0.05) and after 1 week of skin treatment (P 〈 0.01), were significantly decreased as compared with colony counts before treatment, while there was no significant difference in the placebo group before and after treatment. Grading scores of AD also decreased in the AEW group (P 〈0.01), but not in the placebo group. Both the subjects' guardians' evaluation and a referee physician's evaluation of treatment effect were significantly higher in the AEW group than in the placebo group (P 〈 0.01). AEW may be potentially effective in preventing a staphylococcal chronic inflammation in AD because of its strong bactericidal activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1997.tb02423.x
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  • 10
    Electronic Resource
    Electronic Resource
    MORPHOLOGICAL STUDIES RELATING TO THE FRACTURE STRESS AND FRACTURE TOUGHNESS OF SILICON NITRIDE (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— Microstructure and mechanical properties of HP (Hot Pressed), HP/GP (Gas Pressed), and HP/HIP (Hot Isostatic Pressed)—Si3N4 are studied using scanning electron microscopy, bending tests and the indentation fracture method. The grain diameter distribution is analyzed to clarify the relationship between microstructure and mechanical properties; and also the bending strength and fracture toughness. It is shown that bending strength increases with decreasing grain diameter. The results also show that a Hall—Petch type of relationship is obtained between grain diameter and fracture strength. The fracture toughness shows a linear relationship with 〈inlineGraphic alt="inline image" href="urn:x-wiley:8756758X:FFE829:FFE_829_fu1" location="image_n/FFE_829_fu1.gif" extraInfo="missing"/〉, where σF= bending strength, β= a proportionality factor and da= average grain diameter, and is closely related to the aspect ratio of Si3N4 grains. It is concluded, from the morphological analysis, that a microstructure composed of Si3N4 grains, with both a small grain diameter and a large aspect ratio, is effective in improving both the fracture strength and fracture toughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb01527.x
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