ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the influence of deposition parameters on stress generation in CNx (0.3〈x〈0.5) thin films deposited onto Si(001) substrates by reactive magnetron sputtering of C in pure N2 discharges. Film stress, σ, which in all cases is compressive, decreases with an increase in the N2 pressure, PN2, due to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. The film stress σ is also a function of the film growth temperature, Ts, and exhibits a maximum value of ∼5 GPa at 350 °C. Under these conditions, the films have a distorted microstructure consisting of a three-dimensional, primarily sp2 bonded, network. In contrast, films deposited at Ts〈200 °C with a low stress are amorphous. At 350 °C〈Ts〈600 °C, σ gradually decreases as Ts is increased and the microstructure becomes more graphitic and contains fewer defects. Nanoindentation measurements show that the films grown at 350 °C exhibit the highest hardness and elasticity. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121410
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