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  • 1
    Electronic Resource
    Electronic Resource
    Modeling of bombardment induced oxidation of silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3001-3011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary ion mass spectrometry has become the preferred tool for impurity profiling primarily due to its excellent depth resolution and high detection sensitivity. Prerequisite in obtaining high detection sensitivity for positive secondary ions is the use of oxygen as primary ions. This leads to a high degree of oxidation of the sample surface, which is essential for a high secondary ion ionization efficiency. Unfortunately, this oxygen bombardment not only leads to the transformation of the original target surface into an oxidized layer but, as the latter requires a certain fluence before stationary state is reached, inherently causes some nonlinearities and transients in the secondary ion signal and the fluence-eroded depth relation. In this work a computer code implantation, sputtering, replacement/relocation, and diffusion (ISRD) has been optimized to predict the compositional changes of the sample surface (or altered layer formation), the sputter yields and the surface regression as a result of the interaction of oxygen beams with Si-targets. This article describes a careful reevaluation of the previously used version of ISRD (and the parameters contained in the program) in order to obtain a systematic agreement with experimental data on sputter yields, altered layer formation, and surface recession, and with other theoretical predictions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344581
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of magnesium implanted gallium nitride (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 178-182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm−2. The implantation induced defect states were investigated by temperature dependent conductivity (TDC) as well as by thermal and optical admittance spectroscopy (TAS, OAS) measurements. Dominant carrier emissions having thermal activation energies between 360 and 800 meV were found in TAS and TDC. These states are assigned to implantation induced electron traps since they do not appear in the nonimplanted reference sample. Defect states with similar transition energies were also observed in OAS resulting in an enhancement of defect-to-band transitions in the near band-gap region around 3.45 eV, in the blue band around 3.0 eV, as well as in the midgap range for photon energies between 2.5 and 1.80 eV, respectively. In addition, new transitions were found at 2.1 and 1.95 eV. Furthermore, transitions from implantation induced shallow states were observed, i.e., the magnesium acceptor as well as a new donor level at about 70 meV, tentatively discussed as nitrogen vacancy. The critical ion dose for amorphization was determined to be between 5×1015 and 1×1016 Mg+ cm−2 using x-ray diffraction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421218
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  • 3
    Electronic Resource
    Electronic Resource
    Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski n-type GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2245-2250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs with a 300 K resistivity between 10−1 and 108 Ω cm (electron concentration between 1×107 and 5×1015 cm−3 ) grown in quartz crucibles by the liquid-encapsulated Czochralski (LEC) technique was investigated by thermally stimulated current (TSC), temperature-dependent Hall effect (TDH), and deep-level transient spectroscopy (DLTS). Using Schottky contacts the TSC method could be extended to medium-resistivity samples. The strongly varying electron concentrations are correlated to varying TDH activation energies. The correlation between the donors dominating the electrical equilibrium properties and the electron traps detected by TSC and DLTS is discussed. Medium-deep and deep levels are present in this LEC material in such high concentrations that they must be taken into account in the compensation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348703
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  • 4
    Electronic Resource
    Electronic Resource
    Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 546-548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In GaN layers grown by molecular beam epitaxy and metalorganic vapor phase epitaxy on c-axis oriented sapphire, a defect-to-band transition at a photon energy of 0.44 eV was found by optical admittance spectroscopy. This transition was investigated as a function of temperature and modulation frequency. The height of the corresponding optical admittance peak shows a thermally activated quenching with an activation energy of 0.4±0.1 eV caused by a thermal carrier emission from the same defect state to the conduction band at higher temperatures. Based on this thermal quenching, the 0.44 eV level is assigned to an electron trap located in the upper half of the gap. The spectral photoionization cross section was determined, resulting in a photoionization energy at 80 K estimated to be below 0.425 eV. The omnipresence of the 0.44 eV electron trap in GaN layers grown by various epitaxial techniques and in different reactors implicates its intrinsic nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127039
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  • 5
    Electronic Resource
    Electronic Resource
    Retropatellar contact characteristics in total knee arthroplasty with and without patellar resurfacing (2000)
    Springer
    International orthopaedics 24 (2000), S. 191-193 
    Details
    ISSN: 1432-5195
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé  6 cadavres ont été examinés après implantation d’une prothèse totale du genou avec et sans implants de restructuration de la surface rotulienne. Les mesures de la pression et de la surface de contact ont été réalisées avec une flexion du genou à un angle de 60°. En comparant les résultats de genoux sans implants et genoux avec implants de la rotule de taille ”petite”, on remarque que ces derniers ont causé une diminution significative de la surface de contact rétro-rotulienne. Les pressions moyenne et maximum n’ont pas changé de manière déterminante. Les implants de taille ”moyenne” ont conduit à une augmentation considérable de la pression maximum et à une diminution significative de la force alors que la surface de contact et la pression moyenne ont elles, légèrement augmenté. Après la pose des deux types d’implants de la rotule on a constatée une réduction significative de la surface de contact, mais ne pas de la pression rétro-rotulienne.
    Notes: Abstract  Total knee replacement with and without patellar resurfacing was performed in 6 cadaver specimens. The contact pressure and contact area between femur and patella was measured at 60° of flexion. In comparison to specimens without resurfacing the specimens with small size resurfacing showed a significant decrease in contact area, whereas average and maximum pressure were unchanged. In specimens with medium size resurfacing, contact area and average pressure increased slightly, whereas maximum pressure increased significantly. Patellar resurfacing did not change the retropatellar pressure, but was associated with reduced contact area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002640000140
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  • 6
    Electronic Resource
    Electronic Resource
    Improved Phosphoric Acid Mixtures for Nitride Strip (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 43-46 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.76-77.43.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    The Origins of Fluorine in Dry Ultrathin Silicon Oxides (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 153-156 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.76-77.153.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    High-frequency and low-frequency heart-rate fluctuation analysis in newborns—A review of possibilities and limitations (1992)
    Springer
    Basic research in cardiology 87 (1992), S. 193-204 
    Details
    ISSN: 1435-1803
    Keywords: Heart-rate fluctuations ; neonates ; respiratorymovements ; respiratory sinusarrhythmia ; nonrespiratoryrhythms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Respiratory sinus arrhythmia (RSA) has been traditionally defined as the high-frequency component of heart-rate fluctuations (HRF) synchronous with the respiratory movements (RM), i.e., the frequency of RSA corresponds to the respiration rate. It can be shown that at defined relations of mean heart and respiration rate some essential effects must be taken into consideration in studies using RSA parameters The relevance of these effects is shown and a new strategy of RSA quantification demanded, at least in neonates. The diagnostic importance, physiological background and future application of the low-frequency components of the neonatal HRF are reviewed on the basis of our own results. Nonrespiratory cardiovascular HRF cannot always be detected in the neonate by power spectral analysis. Movement-related HRF have a potential diagnostic importance per se, but may also artefactually disturb the quantification of other HRF components. Long-term trends can be used to describe sleep-state related trends and their disturbances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00801966
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  • 9
    Electronic Resource
    Electronic Resource
    Die Kristallstruktur des CaMg2 (1937)
    Springer
    Naturwissenschaften 25 (1937), S. 795-795 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01789231
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  • 10
    Electronic Resource
    Electronic Resource
    Isomeric and ground-state decay of 215 Bi (2003)
    Springer
    The European physical journal 18 (2003), S. 31-37 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. A new high-spin isomer in 215Bi, with a half-life of 36.9(6) s, has been identified at the PSB-ISOLDE on-line mass separator using the pulsed-release technique combined with the element selective RILIS source. A decay scheme of $^{215{\rm m}}$ Bi was constructed and complemented with the low-spinstructure observed in $^{215{\rm g}}$ Bi decay. The population of a cascade on top of the $\left( \nu g_{9/2} \right)^5_{9/2+}$ level in 215Poprovides evidence for Gamow-Teller $\beta$ -decay of the high-spin 215Bi isomer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epja/i2003-10066-6
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