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  • 1
    Electronic Resource
    Electronic Resource
    An electron spin resonance study of the reactions of lipid peroxyl radicals with antioxidants (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 7185-7190 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100381a043
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351212
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 308-310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352139
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  • 4
    Electronic Resource
    Electronic Resource
    Investigations on nanocrystalline Fe78B13Si9 alloys by positron annihilation spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5124-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Fe78B13Si9 alloys with nanoscale grain sizes prepared by the crystallization method have been studied by positron lifetime and Doppler-broadened line-shape measurements. The results obtained are different from those on amorphous or coarse-grained crystalline alloys with the same composition. When the grain sizes are clearly smaller than the mean positron diffusion length (L+(approximately-equal-to)100 nm), saturation trapping and annihilation of the positrons in the samples should occur at traps within the interfaces. There are two kinds of defects in the interfaces of the nanocrystalline FeBSi alloys, i.e., the free volumes (the size of which is slightly smaller than that of the amorphous counterpart) and the microvoids. The dependence of grain sizes on the type of interface defects and structure-sensitive properties has also been studied by positron spectroscopy. The measurements and comparison of the mean positron lifetime τ¯ and the Doppler parameter S on the nanocrystalline, amorphous, and coarse-grained crystalline alloys have given a satisfactory explanation for the relationship between the structure-sensitive properties, grain sizes, and crystalline states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352042
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  • 5
    Electronic Resource
    Electronic Resource
    Nonequilibrium computer simulation of a salt solution (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5491-5498 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A nonequilibrium computer simulation is performed to investigate the relaxation of a realistic polar solvent near a rapidly dissociating ion pair. The time evolution of the reaction coordinate, the ultrashort time scale changes in solvation energy and solvent forces, the local density response, the heating of certain librational degrees of freedom, and the time-dependent polarization are studied during the first 125 fs of the reaction. It is found that the relaxation behaviors in the anionic and cationic shells are very different. On average, the solvation process under study takes about 30-40 fs to break the original cage. After another 50 fs, the solvated ion pair reforms a new metastable structure, which feeds energy back into the reacting system to break the cage further. This procedure is apparently repeated many times until dissociation is complete. The results obtained in this work provide a graphic picture of some of the features of ultrashort dynamics of ionic photodissociation reactions in a polar medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458528
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  • 6
    Electronic Resource
    Electronic Resource
    Multiphoton ionization vs multiphoton dissociation: Competition between photoionization and dissociation in CO (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 4272-4276 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The competition between photoionization and spontaneous dissociation involving the 3Π states of CO has been investigated both experimentally and theoretically. In this study we analyzed the mass and kinetic energy spectra of the photofragments generated after irradiating CO with a line narrowed (≈0.75 cm−1) tunable ArF* laser (λ≈193 nm) and calculated the cross section (3.2 Mb) for photoionizing the c 3Π Rydberg state of CO at the excitation energy. The basic conclusions of this study are that the interaction between the 3Π Rydberg states and the 3Π valence states near 12.8 eV causes rapid (picosecond time scale or faster) dissociation of CO which impedes photoionization and that multiphoton dissociation completely dominates multiphoton ionization at laser power densities up to at least 30 GW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457786
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  • 7
    Electronic Resource
    Electronic Resource
    Photoemission study of the effect of thermal annealing on Cs2O/Si(111) surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3787-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cs2O overlayers with different thickness were prepared by simultaneous oxygen–cesium adsorption on Si(111) at room temperature. Photoelectron spectroscopy and work-function measurements have been used to study the Cs2O/Si surfaces as a function of annealing temperature. The results show that the interaction of the Cs2O overlayer with the substrate is weak. The Cs2O species is sensitive to x-ray radiation, forming a new species on the top surface. The Cs2O/Si surfaces exhibit a negative electron affinity with a work-function value of 0.85±0.1 eV until the Cs2O species decomposes completely. After Cs2O disappears, both Cs–O and Si–O bonds are dominant on the surfaces with a work function of about 1.2 eV. For further annealing, the oxygen bonded to cesium gradually transfers to Si due to Cs desorption. The thickness of the SiO2 overlayer formed after Cs desorption is dependent on the mount of oxygen in the Cs2O overlayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405133
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties of Sm2(Fe1−xGax)17 (x=0−0.5) compounds and their nitrides : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6743-6745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of Sm2(Fe1−xGax)17 compounds and their nitrides have been studied. Substitution of Ga for Fe leads to an increase in lattice constants. Introduction of nitrogen results in a further increase in lattice constants. Substitution of Ga for Fe causes a dramatic change of the Curie temperature of the Sm2(Fe1−xGax)17 compounds. When x=0.2 the Curie temperature is enhanced by about 200 K. X-ray-diffraction patterns of aligned samples of Sm2(Fe1−xGax)17 compounds show that alloys with x=0.15, 0.20, and 0.25 exhibit uniaxial anisotropy at room temperature. The introduction of nitrogen made the samples with x≤0.4 exhibit uniaxial anisotropy at room temperature. The Curie temperature of the nitrides decreases with the Ga concentration. The anisotropy fields of the nitrides derived from the high-field magnetization. The changes of the magnetic anisotropy, saturation magnetization, and the moment of the Fe atoms in the nitrides and their parent compounds with Ga concentration are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358148
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission Mössbauer spectroscopy and x-ray diffraction studies on the structure of nanocrystalline Fe-Cu-Si-B alloys (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3365-3370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline Fe-Cu-Si-B alloys with grain sizes of 25–90 nm were synthesized by crystallization of the amorphous alloy. Two nanocrystalline phases of α-Fe(Si) and Fe2B were observed in all tested samples. Transmission Mössbauer spectroscopy investigation on the structure of nanocrystalline Fe-Cu-Si-B alloys showed that Si atoms are completely and substitutionally dissolved in Fe bcc lattice and the arrangement of the Si atoms in the α-Fe(Si) phase shows short range order (SRO), whereas 8.5–9.7 at. % of the B atoms were found as Fe2B and the remainder were located in the interfaces. When grains grow larger, the arrangement of the Si atoms in the α-Fe(Si) phase changes. Interestingly, x-ray diffraction results reveal that the lattice constant of α-Fe(Si) phase decreases rapidly with grain coarsening. Based on the thermodynamic analysis, the changes in the lattice constant of the α-Fe(Si) phase and SRO of Si atoms in bcc Fe lattices were attributed to the lattice expansion as a result of the variation of vacancy concentration in α-Fe(Si) solid solution. Meanwhile, owing to the interface contribution, the alloy with small grain size is found to exhibit large values of half linewidth (HLW) and isomer shift (IS) in the Mössbauer spectra. The results from electrical resistivity measurements agree and confirm the strong effects of the lattice distortion and interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356095
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stability of PtSi contact to GexSi1−x (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 905-907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of PtSi contact to epitaxial Ge0.5Si0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650 °C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104472
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