Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4227-4231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature profile inside a superconducting target in laser ablation is calculated for laser pulses of various shapes. The calculation is based on the equation of heat conduction. All parameters characterizing the target material are assumed to be temperature dependent and are determined empirically by extrapolating experimental data to the melting point. The receding velocity of the vapor-solid interface is determined by the dynamical balance of energy. Our calculation shows that, in general, there exist subsurface overheating spots at different instants as long as the laser pulse intensity is strong enough. The dependence of their occurrence on the pulse shape is analyzed, and conditions to avoid them without jeopardizing the deposition process are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1057-1059 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structure of V-Sr-Tl-O system with transmission electron microscopy. The majority phase in VSrTl0.2Oy samples with a sharp resistivity drop around 165 K is identified as V2Sr0.6TlδOy with δ ranging from 0.01 to 0.04. This phase has a hexagonal structure, with point group 6/mmm, space group P6/mmm, and lattice parameters a=0.569 nm and c=1.284 nm. Upon in situ cooling from room temperature to 130 K, no evidence of structure change is observed. When the crystals of V2Sr0.6TlδOy are heated in situ, two superstructures are formed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2002-2021 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ground-state energies of an excess electron E0 as a function of solvent density are computed using model electron–atom pseudopotentials in fluid helium, argon, and xenon. E0 is a lower bound to the experimentally measurable threshold to photoconductivity, V0. The nonuniqueness of the pseudopotential description of electron–molecule interactions is demonstrated. We find that when many-body polarization effects are included, our calculated E0 results are in close agreement with experimental V0 values indicating that the conduction-band energy lies close to the ground-state energy across a broad range of densities in these polarizable fluids. If the many-body nature of the polarization interaction is ignored the ground-state energies deviate significantly from the V0 results highlighting the importance of accurate treatment of many-body polarization interactions. It is shown that a mean-field theory of polarization gives substantial agreement with full many-body calculations. This allows us to introduce a mean-field, density-dependent pair potential which greatly simplifies such many-body calculations. In the more polarizable systems, it is found that the spatial extent of the ground-state wave function as a function of solvent density is correlated with the density dependence of both V0 and the electron mobility, and it becomes uniformly spread throughout our simulation cell as the electron mobility goes through its maximum value at intermediate solvent densities.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 6250-6255 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on Cu(111) and its decomposition products induced by electron irradiation and annealing are reported. It is found that electron bombardment and subsequent annealing of Ru3(CO)12/Cu(111) lead to the formation of Cu–Ru bimetallic aggregates which exhibit similar features as those reported previously on polycrystalline Cu, that is that Ru–Cu aggregates are formed of which Ru atoms are at the core and the surface is wetted with Cu and there exist distinct interface states. The mechanism for the formation of the bimetallic Cu–Ru aggregates on Cu(111) is almost certainly one in which two-dimensional Ru aggregation occurs on the surface upon initial annealing (∼225 °C) followed by three-dimensional aggregation and wetting of the Ru cluster surface by Cu after further annealing at higher temperatures ((approximately-greater-than)450 °C). The interaction between Ru surface intermediates and Cu(111) before Cu wetting occurs is also examined with photoemission and SW–Xα calculations.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1942-1944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural stability and electrical properties of Sr2FeMoO6 under high pressure at room temperature have been studied using energy dispersive x-ray diffraction with synchrotron radiation and resistance and capacitance measurements. The x-ray diffraction results show that the structure of Sr2FeMoO6 remains stable up to 40 GPa. The equation of state of Sr2FeMoO6 is obtained from the V/V0–P relationship. The bulk modulus B0 and its first-order derivative B0′ of Sr2FeMoO6 were calculated based on the Birch–Murnaghan equation. The electrical resistance undergoes a metallic transition at about 2.1 GPa. The metallic transition may be caused by a change in the electronic structure induced by high pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3139-3144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of pressure, magnetic field, and Mn-site doping on the magnetic structure and resistive behavior of La0.5(Sr0.53Ca0.47)0.5Mn1−xFexO3 (0≤x≤0.10) have been experimentally studied. The system experiences two magnetic transitions subsequently with decreasing temperature: a paramagnetic to ferromagnetic transition and a ferromagnetic to antiferromagnetic (AFM) transition. The second magnetic transition coincides with a steep resistivity jump. In addition to reducing the critical temperature for the AFM transition (TN), the incorporation of Fe enhances the ferromagnetic order below TN as demonstrated by the gradual increase of magnetization with the content of Fe. Long-range AFM order is replaced by short-range AFM order when x exceeds 0.03, and disappears completely for x〉0.06. The application of pressure or magnetic field depresses the AFM nature of the compounds, resulting in a downward shift of TN at a rate of ∼7 K/GPa or ∼4 K/T. The most interesting observation of the present study is the greatly enhanced resistivity jump at TN, which increase from 1 to 2 orders, after the sample undergoes a pressurizing and then a pressure relieving process. Although high pressure, magnetic field, and Fe doping produce similar effects on the AFM order, the underlying physics is different. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4447-4452 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on polycrystalline ordered and disordered Cu3Au surfaces and its decomposition products induced by zero order light and electron bombardment are reported. The results are compared with multiple-scattering–X-alpha (MS–Xα) calculations and recent studies of Ru3(CO)12 on Cu.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2842-2848 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a new type of shock associated with magnetic reconnection processes has been explored using a compressible magnetohydrodynamics simulation method. The simulations have shown that, when there are strong field-aligned shear flows at the two sides of a current sheet, the coupling mode between Kelvin–Helmholtz and resistive instabilities will appear; further, reflected shocks and incident shocks can be produced at both sides of the boundary layer. Both the reflected shocks and incident shocks are fast shocks, through which the magnetic field strength, density, and temperature all increase sharply, while the plasma velocity decreases steeply. It is expected that some inhomogeneous structures can be formed at plasma boundary layer regions due to the existence of fast field-aligned shear flow driven shocks. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1073-1078 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of super-Gaussian velocity distributions on the ion feature of Thomson scattering off two-ion plasmas is studied. The analytical solution to the dispersion equation shows that although both the frequencies of the two (fast and slow) ion-acoustic waves increase with the index of the super-Gaussian, the slow wave is more weakly dependent on the index due to the screening of the light ions. In the case that plasma can sustain two lightly damped ion-acoustic waves, the inferred plasma parameters such as electron temperature and plasma temperature ratio may suffer some errors without consideration of super-Gaussian electron velocity distributions. Since the relative intensity between the resonant peaks of the fast and slow waves is sensitive to the super-Gaussian index, the super-Gaussian velocity distributions may be measurable with Thomson scattering off laser-heated two species ion plasmas. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...