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  • 1
    Electronic Resource
    Electronic Resource
    Heat transfer between two metallic surfaces at small distances (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358001
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic structures of Sb/Ga(Al)Sb (111) semimetal-semiconductor superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5318-5326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structures of semimetal-semiconductor (Sb2)m/(GaSb)n (111) and (Sb2)m/(AlSb)n (111) (m,n≤10) superlattices are calculated by using a tight-binding theory including spin-orbit interaction. It is found that a narrow gap forms in these materials due to the quantum confinement effect. This may allow strong optical nonlinearity in the infrared region. With increasing the thickness of the Sb layer, a possible semiconductor-semimetal transition is suggested at a certain thickness. The influence of interface states on the formation of the band gap is investigated by adjusting the interface relaxation and band offsets. Our study shows that semimetal-semiconductor Sb/Ga(Al)Sb superlattices could potentially open a new possibility in electro-optical device manufactures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357183
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal sensors for investigation of heat transfer in scanning probe microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2262-2266 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Planar thermocouples designed for investigation of heat transfer in scanning tunneling microscopy and scanning thermal microscopy are described. The limit of sensitivity to local thermal power can be as small as 10 nW. The devices are based on two different thin films formed as a cross on a thin glass substrate. Heat fluxes in the cross point can be detected by measuring the thermoelectric signal from two ends of the cross. As described elsewhere planar thermocouples of this type have been successfully used to detect the energy which is deposited by tunneling electrons and to measure the heat which is coupled across a submicron vacuum gap between two metals by the fluctuating fields of electromagnetic surface modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145225
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  • 4
    Electronic Resource
    Electronic Resource
    Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 955-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]||GaN[112¯0]||Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371966
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  • 5
    Electronic Resource
    Electronic Resource
    Experimental demonstration of resonant interband tunnel diode with room temperature peak-to-valley current ratio over 100 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1542-1544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak-to-valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double-quantum well system embedded in a pn junction structure grown on InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353231
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  • 6
    Electronic Resource
    Electronic Resource
    Giant magnetothermopower and giant magnetoresistance in molecular beam epitaxy grown Co/Cu(111) superlattices : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5521-5523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a giant magnetothermopower (GMT), giant magnetoresistance (GMR), and on magnetization measurements in Co/Cu[111] superlattices grown by molecular beam epitaxy. The maximum value of the GMT (at room temperature) was 14% for a Cu thickness of 9 A(ring) and the maximum GMR (at 4.2 K) was −26% at 7 A(ring) of Cu. Oscillations in the remnant magnetization and the saturation field as a function of Cu thickness with a period of about 10 A(ring) were observed. However, there were no oscillations in the GMT or the GMR. The maximum values of both the GMT and GMR are associated with saturation fields in excess of 40 kOe and with small remnant magnetizations. These results are consistent with the presence of antiferromagnetic coupling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353689
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346627
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic properties of n-i-n-i doping superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2921-2933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structures of n-i-n-i doping superlattices are found using a self-consistent calculation based on the envelope function formalism. The modulation potentials, the charge density distributions, the dispersion relationships, and the occupation of the subbands in the n-i-n-i superlattices are computed and their dependence on temperature and the structural parameters of the superlattices are studied. It is found that the modulation potentials of n-i-n-i doping superlattices are weak, and quantum effects are, therefore, also weak. The density of states in n-i-n-i superlattices can be adjusted by varying the structural parameters of the superlattices. As a result, the n-i-n-i doping superlattices behave like uniformly doped semiconductors with an adjustable density of states. The density of states is found to be temperature dependent. Electron mobilities of the n-i-n-i doping superlattices are also computed. It is found that both impurity scattering processes that are observed in uniform lightly doped semiconductor and heavily doped semiconductor can coexist in the n-i-n-i doping superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353023
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of transmission in polytype interband tunneling heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4714-4726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, based on a two-band k⋅P theory formulation, the transmission properties of polytype interband tunneling heterostructures are analyzed. The expressions for the continuity equation and the conservation of particle in the two-band picture of the interband tunneling are rigorously derived. A general and explicit relation between the quasibound state and the transmission resonance is established. Close-form analytical expressions for the transmission coefficient and the resonant condition are also derived. Our analysis provides reasonable explanations to all available experimental results in the polytype interband tunnel heterostructures, and insight to the design of the interband tunnel devices. In particular, the double quantum well structure is examined in detail for achieving strong resonances and multiple negative differential resistances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352078
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of Au impurities at the interfaces on the magnetoresistance of MBE-grown Co/Cu multilayers : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7055-7057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Co/Cu multilayers by MBE using a shuttering arrangement wherein half of the sample receives an amount of Au impurities at each interface. Under these controlled conditions, the differences in measurements between each half is attributed only to the effect of the impurities. The samples were characterized by x-ray diffraction and RHEED. We have found that small fractions of a monolayer of Au deposited at the Co/Cu interface significantly decreased the GMR. These results are discussed in the light of current theories on the role of bulk and interface scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356724
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