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  • 1
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of microcrystalline silicon films prepared by a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1676-1680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon films have been prepared on indium-coated glass utilizing a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system. The microcrystalline films were fabricated by varying the number of cycles from 10 to 60 under a fixed H2 time (t2) of 120 s, where the corresponding deposition time (t1) of amorphous silicon thin film was 60 s. Structural properties, such as the crystalline volume fraction (Xc) and grain sizes were analyzed by using Raman spectroscopy and a scanning electron microscopy. The carrier transport was characterized by the temperature dependence of dark conductivity, giving rise to the calculation of activation energy (Ea). Optical energy gaps (Eg) were also investigated using an ultraviolet spectrophotometer. In addition, the process under different hydrogen plasma time (t2) at a fixed number of 20 cycles was extensively carried out to study the dominant role of hydrogen atoms in layer-by-layer deposition. Finally, the correlation between structural and electrical properties has been discussed on the basis of experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372076
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of mixing molecular gases on plasma parameters in a system with a grid-controlled electron temperature (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1025-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma parameter variations as a function of a mixing ratio in an electron temperature control system using a grid are investigated. Under the grid, the electron temperature, as well as electron density, is a strong function of a mixing ratio. The electron temperature decreases with a mixing ratio of molecular gases (O2 and CF4), and the large inelastic cross section of molecular gas is the reason for the decrease in the electron temperature. When the length of sheath around the grid wires is comparable to the space between the grid wires, only 10% mixing of CF4 decreases the electron temperature to 0.8 eV in 10 mTorr Ar/CF4 plasma. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436129
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of substrate bias voltage on plasma parameters in temperature control using a grid system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4246-4250 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we investigate the effects of substrate bias voltage on plasma parameters in temperature control using a grid system in inductively coupled plasma. Electron temperature can be controlled from 2.5 eV to 0.5 eV at 1 mTorr Ar plasma using grid bias voltage, and the electron temperature is a strong function of substrate bias voltage. The main control parameter determining the electron temperature is the potential difference between grid-biased voltage and the plasma potential in the temperature controlled region (ΔφII,g). When substrate bias voltage is negative, plasma parameters do not vary with substrate bias voltage due to constant ΔφII,g © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395571
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  • 4
    Electronic Resource
    Electronic Resource
    Pressure and helium mixing effects on plasma parameters in temperature control using a grid system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3498-3501 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure and He mixing effects on plasma parameters in electron temperature control using a grid system are investigated. Electron temperature is higher in lower pressure, when the electron temperature is high and not controlled. Electron density can be increased by about three times by decreasing the source gas pressure from 20 to 1 mTorr, and by about two times by He mixing in the temperature controlled region (diffusion region), while the electron density is decreased in the source region. This electron density increase is mainly due to the increase of the high energy electron population, and the measured electron energy distribution functions clearly show this. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377861
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  • 5
    Electronic Resource
    Electronic Resource
    High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1189-1194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n–GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. The forward turn-on voltage was relatively independent of the pressure up to 20 mTorr. The reverse breakdown voltage showed the worst degradation at 75% Cl2 mainly because of a sidewall contamination. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n–GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the InGaN/GaN MQW LEDs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491585
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  • 6
    Electronic Resource
    Electronic Resource
    Dielectric properties of pulsed-laser deposited SrTiO3 films at microwave frequency ranges (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3592-3595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constant and loss tangent of SrTiO3 thin films were characterized under the influence of an applied dc voltage at about 3.64 GHz. The measurement was carried out utilizing a gold resonator with a flip-chip capacitor at cryogenic temperatures. The analysis of the experimentally observed capacitance and quality factor served to give a measure of the dielectric constants and the loss tangents of the SrTiO3 film at microwave ranges, respectively. A dielectric constant of 830 and a low loss tangent of 6×10−3 at 3.64 GHz were observed at 90 K and 100 V. The dielectric loss decreases as the bias voltage increases. In addition, the quality of the SrTiO3 film is presented in terms of fractional frequency under the bias voltages and cryogenic temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287608
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  • 7
    Electronic Resource
    Electronic Resource
    Measurements of the electron temperature by the Thomson scattering system on the Hanbit magnetic mirror device : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1118-1121 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321749
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of microstructural changes on magnetic Barkhausen noise and magnetomechanical acoustic emission in Mn–Mo–Ni pressure vessel steel (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5242-5244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of microstructural changes on magnetic Barkhausen noise (BN) and magnetomechanical acoustic emission (MAE) in Mn–Mo–Ni pressure-vessel steel with various microstructures was investigated. The BN and MAE signals were strongly influenced by the microstructural features which were characterized by transmission electron micrograph observation. BN energy and the measured area under the rectified signal envelope varied inversely with hardness, and changed with the microstructure. It indicates that they are closely related to the dislocation density and residual stress which act as a barrier to irreversible domain wall motion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373308
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  • 9
    Electronic Resource
    Electronic Resource
    Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1160-1162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step rf plasma oxidation technique of an insulating layer has been performed to enhance electrical and structural properties of magnetic tunnel junction (MTJ) devices. Comparison was made by analyzing properties of the MTJ oxidized by conventional rf and two-step rf plasma oxidation methods. Experimentally observed results give improved surface imaging and sufficient oxygen contents of the insulating layer under the two-step oxidation method. In addition, electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.7 to 1.8 V and from 4.5% to 6.8%, respectively, correlated with improved structural information. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391407
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  • 10
    Electronic Resource
    Electronic Resource
    Impurities in dielectrics and hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of systematic investigation of impurities in dielectrics and hydrogen barriers (Ti and Al2O3 films) during the integration process of SrBi2Ta2O9-based ferroelectric memories. The capacitors integrated with Ti hydrogen barriers are not electrically degraded regardless of the annealing conditions of the subdielectrics. On the contrary, electrical properties of the capacitors using Al2O3 hydrogen barriers significantly depend on the annealing temperatures for subdielectrics. It turned out that interaction of the dielectrics with plasma during sputtering of the Ti films caused fragmentation of the moisture in the dielectrics and absorption of the hydrogen in the Ti films, making annealing irrelevant. However, the alumina films blocked both hydrogen and moisture in the subdielectrics during the passivation process, resulting in dependence on the annealing temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403664
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