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  • 2000-2004  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1149-1151 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-band model involving the heavy- and light-hole bands was adopted to analyze the temperature-dependent Hall effect measured on Mg-doped p-type GaN epilayers. At 300 K, the hole concentration was determined to be nearly twice the Hall concentration estimated from the measured Hall coefficient, meanwhile the Hall mobility of heavy hole turned out to be only half of the measured one. It is shown that the scattering by space charge and acoustic deformation potential is anomalously enhanced in Mg-doped GaN, and that the light hole affects conspicuously the observed transport parameters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2942-2947 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Tip characteristics play an important role in the resolution and sensitivity of scanning probe microscopy. Extensive efforts have been devoted to tip fabrication. Most of the research is focused on scanning tunneling microscopy applications, which require sharp and short tips. Long tips that can be bent into cantilevered tips have great potential in atomic force microscopy/apertureless near-field scanning optical microscopy applications. However, the fabrication of such tips has been rarely reported. The present work is carried out with the aim of optimizing the conditions suitable for fabricating long and sharp tungsten tips. Besides topography, optical, and spectroscopic information, electrical and magnetic measurements can also be carried out with such tips obtained with the recipe reported in this article. The long tips also make it possible to measure deep grooves/trenches. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 27 (2004), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Cynipid gall formation is achieved by an insect–plant interaction whereby cynipid gallwasps redirect host-plant development to form novel structures to protect and nourish the developing larvae. Work was carried out to investigate the molecular mechanisms involved in this interaction, and extend the understanding of plant tissue development. Cytological changes of the inner-gall tissue throughout the development of several gall species was investigated and the developmental stages of gall formation defined, to reveal two different patterns of development followed by the galls tested. Fluorescent in situ hybridization demonstrated many of the inner-gall cells to be polytenized. Comparisons between inner-gall and non-gall tissue protein signatures by Schönrogge et al. (Plant, Cell and Environment 23, 215–222, 2000) have demonstrated the variation between gall and non-gall protein signatures, and identified a number of inner-gall proteins. Further analysis of one of these inner-gall proteins involved in lipid synthesis, putative biotin carboxyl carrier protein (BCCP), revealed differential expression throughout development, and showed this expression to be concentrated in the inner-gall tissue in all the gall species tested.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1573-6849
    Keywords: chromatin ; chromatin condensation ; cytosine methylation ; repetitive sequences
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Cytosine methylation levels and susceptibility to drug-induced hypomethylation have been studied in several Nicotiana tabacum (tobacco) DNA repetitive sequences. It has been shown using HapII, MspI, BamHI and Sau3AI methylation-sensitive restriction enzymes that the degree of 5′-mCmCG-3′ methylation varied significantly between different repeats. There were almost saturation levels of 5-methylcytosine at the inner (3′) cytosine position and variable degrees of methylation at the outer (5′) cytosine at the enzyme recognition sites. The non-transcribed high copy satellite sequences (HRS60, GRS) displayed significant heterogeneity in methylation of their basic units while middle repetitive sequences (R8.1, GRD5, 5S rDNA) were more uniformly modified at both cytosine residues. Dihydroxypropyladenine (DHPA) treatment, which is thought to reduce DNA methyltransferase activity by increasing S-adenosylhomocysteine levels, resulted in extensive demethylation of the outer cytosine in all repeats, and the partial hypomethylation of cytosines at the inner positions in less densely methylated repeats such as HRS60 and GRS. The results suggest that hypomethylation of 5′-mCmCG-3′ sites with DHPA is a gradual non-random process proceeding in the direction mCmCG→CmCG→CCG. The 18S-5.8S-25S rDNA was remarkably hypomethylated relative to the 5S rDNA at all restriction sites studied. Fluorescence in-situ hybridization showed that DNA decondensation within and between the 18S-5.8S-25S and 5S rDNA loci was variable in different nuclei. All nuclei had condensed and decondensed sequence. The chromatin of 18S-5.8S-25S rDNA was more readily digested with micrococcal nuclease than the 5S rDNA suggesting that the overall levels of decondensation were higher for 18S-5.8S-25S rDNA. Variable decondensation patterns within and between loci were also observed for GRS and HRS60. Cytosine methylation of the tobacco repeats is discussed with respect to transcription, overall levels of condensation and overall structure.
    Type of Medium: Electronic Resource
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