Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1021-1023
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoconductivity and optical absorption measurements were employed to analyze deep levels in undoped n-type GaN films grown on sapphire substrate by metalorganic chemical vapor deposition. At room temperature, the photoconductivity measurement exhibits a broad level at around 1.90 eV. Similarly, the optical absorption spectrum shows a deep level located at 1.87 eV within the band gap, which is best described by a transition from a donor charge-transfer level to the conduction band, according to Lucovsky theory. A persistent photoconductivity whose behavior is distinctive from that of previously reported work for n- or p-type GaN epitaxial films was observed. The photocurrent quenching and decreased dark current in the persistent photoconductivity effect suggest that metastable electron states are formed in the band gap to trap electrons which tunnel out the potential barrier with long recovery time. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125944
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