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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1225-1232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectra were investigated for CuAlSe2 epilayers grown on GaAs(001) substrates by means of low-pressure metalorganic chemical-vapor deposition. PL properties were studied with relation to metalorganic precursors used for the growth. High-quality undoped epilayers exhibited PL peaks related to a free exciton (2.739 eV) and a bound exciton (2.677 eV). The other undoped epilayers exhibited PL bands at 2.3, 2.4, and 2.5 eV originating from donor-acceptor (D-A) pair recombinations. Some of them were found to have a common activation energy for the thermal quenching of 50±10 meV. The PL spectrum changed drastically by impurity doping. Intense green emissions at 2.51 and 2.43 eV were observed in Zn and Mg-doped epilayers, respectively, which were interpreted as D-A pair recombinations based on the dependencies of the PL spectra on excitation intensity, decay time, and temperature. The donor and the acceptor activation energies (ED and EA) were estimated to be 110 and 230 meV, respectively, for the Zn-related D-A pair emission at 2.51 eV. Similarly, ED and EA for CuAlSe2:Mg were estimated to be 140±10 and 270±10 meV, respectively. Furthermore, D-A pair recombinations between 2.3 and 2.5 eV for CuAlSe2:I were studied. CuAlSe2 was proven to be a promising material for short-wavelength visible-light-emitting devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358990
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and characterization of CuAlxGa1−xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3338-3345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low-pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c-axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin-orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal-field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low-temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish-purple with increasing x. A peak due to a free-to-acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective mass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363245
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3009-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low-pressure metalorganic chemical-vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x-ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron-probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good-quality epilayers are close to those of the bulk crystal. The slight increase of the crystal-field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low-temperature PL spectra exhibited an intense peak at 1.71 eV, the energy being in good agreement with the A-exciton energy. A weak peak due to a free-to-acceptor transition was also observed at 1.66 eV. A broad PL peak at 1.76 eV was observed together with the intense band-edge PL at 1.67 eV, and the peak was assigned to relate to the B-exciton transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357503
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  • 4
    Electronic Resource
    Electronic Resource
    Penning ionization electron spectroscopy of dichlorobenzenes (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 4250-4254 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100164a017
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication and measurement of a Nb based superconducting single electron transistor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 636-638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new four-layer resist system was developed to fabricate small capacitance niobium tunnel junctions. Nb/AlOx/Al junctions were used to make a superconducting single electron transistor composed of two dc SQUIDs in series. The current-voltage characteristics were measured and two types of resonant tunneling of Cooper pairs were observed at different magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112255
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion and doping of Si into GaAs from undoped SiOx/SiN film (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 225-227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion and n-type doping of Si into GaAs from a novel diffusion source consisting of an undoped SiOx/SiN double-layered film were achieved by rapid thermal annealing at 860–940 °C. The film properties of the double-layered films employed as Si diffusion sources are experimentally presented. The characteristics of the Si diffused layers were investigated by secondary ion mass spectrometry, capacitance-voltage measurement, and the Hall method. The carrier profiles exceeded 2×1018 cm−3 and featured an abrupt diffusion front, while a maximum electron concentration of 6×1018 cm−3 was obtained at 940 °C. The diffused Si profiles were consistent with the SiGa+−VGa− pair diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110348
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  • 7
    Electronic Resource
    Electronic Resource
    THE MOUSE FACTOR H ALLOTYPES WITH MULTIPLE AMINO ACID REPLACEMENT, H.l AND H.2 SHOW INDISTINGUISHABLE CO-FACTOR ACTIVITY FOR FACTOR I (1991)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of immunogenetics 18 (1991), S. 0 
    Details
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: The authors report the functional analysis of the purified mouse factor H allotypes H. 1 and H.2, which were clearly distinguished from each other by an immunodiffusion test. Both allotypes acted as a co-factor for factor I in cleaving mouse C3b and we found no significant difference between their activities. The results strongly suggest that the function of mouse factor H for the co-factor activity has been well conserved between two allotypes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1744-313X.1991.tb00039.x
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  • 8
    Electronic Resource
    Electronic Resource
    Responses of midbrain raphe neurons to local temperature (1976)
    Springer
    Pflügers Archiv 364 (1976), S. 205-207 
    Details
    ISSN: 1432-2013
    Keywords: midbrain raphe neuron ; thermosensitive neuron ; brain serotonin ; midbrain temperature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The effect of heating and cooling in the midbrain on the unit activities of midbrain raphe neurons in the rat was observed. Out of 24 raphe units studied, 14 units responded to a rise in midbrain temperature with an increased rate of firing. The remaining 10 units did not respond to temperature changes between 34 and 41°C. The result is consistent with the idea that the heat-induced increase in brain serotonin turnover is mediated by an increased firing rate of midbrain raphe neurons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00585193
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  • 9
    Electronic Resource
    Electronic Resource
    Spectrometer for polarized soft X-ray Raman scattering (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1013-1015 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: An experimental system for polarized soft X-ray Raman scattering spectroscopy has been constructed. The soft X-ray spectrometer is based on the Rowland circle geometry with a holographic spherical grating. Three types of gratings are used to cover the energy range from 18 eV to 1200 eV. According to a ray-trace simulation, the resolution is expected to be 200 meV at 700 eV by using a 10 µm slit width. The polarized and depolarized soft X-ray Raman scattering spectra can be measured by rotating the soft X-ray spectrometer around the axis of the incident beam. Preliminary measurements of polarized and depolarized spectra were accomplished at undulator beamline BL-2C of the Photon Factory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597019481
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  • 10
    Electronic Resource
    Electronic Resource
    N-Acetyl-L-phenylalanine-N-methylamide (1977)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 33 (1977), S. 247-249 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567740877003239
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