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  • 11
    Electronic Resource
    Electronic Resource
    Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2266-2268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric films of SiC, 60–150 nm thick, were deposited on [001] and [111] Si wafers by laser ablation of ceramic stoichiometric SiC targets. Films grown at substrate temperatures above 1050 °C show orientation epitaxial to the Si substrate along the film normal. Depending on the deposition conditions, the oriented crystallite dimension along this direction ranges from 20 nm up to the film thickness. The crystallite dimensions in the film plane range from 20 to 70 nm. Raman spectra indicate that the films often contain material other than crystalline SiC. Some of that is in the form of small (3–5 nm) graphitic inclusions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106065
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  • 12
    Electronic Resource
    Electronic Resource
    Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition of carbon onto Si wafers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2171-2173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that SiC films can be deposited epitaxially on [001] and [111] Si wafers by excimer laser ablation of just a carbon target, in vacuum, at deposition temperatures as low as 1100 °C. Diffraction studies show that the SiC films have the same crystalline orientation as the substrates. The film growth on the Si substrate to thicknesses as large as 4000 A(ring) with no significant excess carbon indicates that in addition to reaction of the carbon in the plume with Si of the substrate, there is transport of Si within the SiC film. For continued deposition beyond this thickness a carbon layer will form. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112998
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  • 13
    Electronic Resource
    Electronic Resource
    Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the microstructural development and optical properties of epitaxial Ge1−xCx alloys (0〈x〈0.1) grown on Si(100) by low-temperature (200 °C) molecular-beam epitaxy. Films with C concentrations below 2%–3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E1 critical point in Ge. No new features attributable to Ge–C vibrational modes could be identified using Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117703
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  • 14
    Electronic Resource
    Electronic Resource
    Ion-channeling study of the SiC/Si/SiO2/Si interface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3501-3503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling has been used in a detailed study of 3C–SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick 〈100〉-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC–Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC–Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124143
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  • 15
    Electronic Resource
    Electronic Resource
    The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 626-628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman signature of the local Ge–C mode for substitutional C is identified as a narrow line (8 cm−1 full width at half maximum) near 530 cm−1 in alloy films of Ge1−yCy (0≤y≤0.07) grown on Ge (100) substrates by low-temperature (200 °C) molecular beam epitaxy. The intensity of the Ge–C line relative to the c-Ge line suggests that only a small fraction of the nominal C is in substitutional sites. In ternary alloys of Ge1−x−ySixCy with x=0.1 and 0.2 and y=0.03, the Ge–C mode disappears, suggesting a strong bias towards C bonding with Si as opposed to Ge. In Ge1−xSnx films the Ge–Sn mode is seen at 263 cm−1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121877
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  • 16
    Electronic Resource
    Electronic Resource
    Determining magnetic anisotropies from hysteresis loops (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method for determining magnetic anisotropies from hysteresis loops is presented. While sweeping the loop, a magnetic field is applied perpendicularly to the sweep-field axis. This causes the magnetization to rotate reversibly in a wide field range and still reach saturation at finite fields. An example is given whereby surface and volume anisotropies are determined from magneto-optical Kerr effect loops in Co films grown on stepped Cu(001). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118316
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  • 17
    Electronic Resource
    Electronic Resource
    Combining different linkage maps in sugar beet (Beta vulgaris L.) to make one map (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 116 (1997), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Several genetic maps for sugar beet (Beta vulgaris L.), from different German research groups, have been published and it is now possible to consider combining them with the aid of the common markers. The computer program JOINMAP (versions 1.3 and 2.0) was used for pair-wise combination of three populations. Several problems arose: the genetic background of the populations, different population structures (F2 versus F1× F1), different number of polymorphic loci for common probes in the populations to be combined, different estimates of the recombination rates between the same markers and differences between the JoinMap versions. The maps from two F2 populations could be integrated into a single map, but it was more appropriate to construct separate maps for the F2 populations and the F1× F1 population using common markers as reference points only.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1997.tb00971.x
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  • 18
    Electronic Resource
    Electronic Resource
    Prediction of Yield for Specific Locations in German Winter-wheat Trials (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 113 (1994), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The interaction between varieties and environment can make the prediction of crop performance difficult. The farmer is obviously interested in achieving optimum production within the particular growing environment of his farm, thus, this paper investigates if crop performance predictions can be improved by making information from other locations into account. The investigation is based on yield data from winter wheat resulting from official German variety-performance tests. The predictors are based on the single location (control), unweighted means, principal components, and weighted means, produced using regression coefficients as weights. These predictors were tested on an independent data set from another year. For the given yield data in winter wheat, the overall mean proved to be the best, which suggests that prediction for all locations should be the same, and predictors for specific locations cannot, therefore, be recommended. The main reason for this is the relatively small interaction between genotype and location, in comparison to the second-order interaction between genotypes, locations and years.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1994.tb00711.x
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  • 19
    Electronic Resource
    Electronic Resource
    Combined linkage maps and QTLs in sugar beet (Beta vulgaris L.) from different populations (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 118 (1999), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The construction of genetic maps is an expensive and time-consuming process. The breeder is therefore interested in using maps developed from other mapping populations but this is only possible if the genetic structure is similar for the chromosomal regions of interest. In this paper, maps of three populations of sugar beet (Beta vulgaris L.) with common polymorphic marker loci are compared. Maps were constructed with MAPMAKER 3.0 and JOINMAP 2.0. Both mapping programs gave, in general, the same order for common markers. However, the number of common markers was too low to construct a combined map for all chromosomes. For one population, in contrast to the other two, the map constructed with MAPMAKER 3.0 was much longer than that constructed with JOINMAP 2.0.For two of these populations yield traits were also available from different environments. For quantitative trait loci (QTL) analysis of the yield data, the packages MAPMAKER/QTL 1.1 and PLABQTL were used. No QTL common for the two populations could be detected. The program and the version used strongly influenced the estimated positions of QTLs. There was also a strong interaction with environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1999.tb01513.x
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  • 20
    Electronic Resource
    Electronic Resource
    The use of low molecular weight glutenin subunits to distinguish between wheat cultivars with and without resistance to the Russian wheat aphid, Diuraphis noxia (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 118 (1999), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A number of resistance sources for the Russian wheat aphid have been reported in the last few years and were used to develop resistant cultivars from current commercial cultivars in various breeding programmes. It can be diffcult to distinguish between the cultivars with and without resistance without actual infestation and so in this study we looked at low molecular weight glutenin subunits (LMW-GS) of the two groups. Distinctly different banding patterns were found for the cultivars tested and their isogenic counterparts. Although the LMW-GS and DN1 and DN5 are coded on different chromosomes, the LMW-GS are highly repeatable and banding profiles of each cultivar can be used for the identification of unknown seed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.1999.118001091.x
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