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  • 1
    Electronic Resource
    Electronic Resource
    Low-noise and high-power operation in high reflectivity coated nonabsorbing mirror GaAlAs lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4420-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully attained low-noise and high-power operation in GaAlAs lasers by applying high reflectivity facet coating approach to nonabsorbing mirror lasers. High reflectivity coating is used to reduce feedback induced noise coming from hopping between the diode cavity modes and between the external cavity modes. A nonabsorbing mirror structure is used to obtain high-power operation by suppressing mirror degradation and catastrophic optical damage effectively even with the use of high reflectivity coating. Nonabsorbing mirror lasers with the front facet reflectivity 50% showed the relative intensity noise level less than −130 dB/Hz at 3 mW under 0%–10% optical feedback and showed the cw output power as high as 50 mW in fundamental spatial mode operation. Under 30-mW cw operation at 50 °C, on the other hand, obvious degradation has not been observed over 4000 h in the nonabsorbing mirror lasers with 50% front facet reflectivity. Thus the present laser is useful as a low-noise source at a low-power level and also as a high-power source with high reliability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346192
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  • 2
    Electronic Resource
    Electronic Resource
    Pressure-induced phase transition in solid hydrogen sulfide at 11 GPa (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 2036-2040 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Raman spectra of hydrogen-bonded molecular solid H2S have been measured up to 23 GPa at 300 K in a gasketed diamond-anvil cell. In the orientationally disordered phase I between 0.47 and 11 GPa, the symmetric stretching mode ν1 shows a red-shift in frequency (dν1/dP=−10.1 cm−1/GPa ) and a dramatic broadening with pressure. At about 11 GPa, the antisymmetric stretching band ν3 appears at the higher-frequency side of ν1. Near this same pressure five low-frequency vibrational modes also appear and show pressure-sensitive features. These results indicate a pressure-induced phase transition near 11 GPa. This new solid phase, which persists to at least 23 GPa at 300 K, seems to be the same phase as previously found above 3.3 GPa at 25 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461002
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  • 3
    Electronic Resource
    Electronic Resource
    High-pressure Raman study of solid deuterium sulfide up to 17 GPa (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 7137-7139 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-pressure Raman studies up to 17 GPa have been made on solid D2S at room temperature. Features of vibron and phonon modes indicate a pressure-induced phase transition near 10 GPa. In the orientationally disordered phase I between 0.5 and 10 GPa, the symmetric stretching mode ν1 shows a red-shift in frequency (dν1/dP=−6.0 cm−1/GPa). By comparing with recent studies of solid H2S, the deuterium isotope effects are investigated for vibrational properties and phase transitions of D2S under ultrahigh pressures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463538
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  • 4
    Electronic Resource
    Electronic Resource
    Two-dimensional toroidal electron analyzer for energy and angular dispersive measurements (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1970-1977 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A toroidal electrostatic analyzer with a two-dimensional position-sensitive electron detector has been developed for the measurement of differential excitation cross sections in electron-ion collisions. The electron position is resolved simultaneously in the energy and angular dispersive directions of the analyzer. The present electron analyzer is specially designed with a narrow curved entrance slit and a wide exit slit coupled with an exit lens system after the toroidal deflector, which can give a wide energy dispersed range of 20% of the mean pass energy and a large angular range extending from 30° to 120°. The performance of the spectrometer has been studied by measuring the scattered electrons from Ar atoms and from a highly oriented pyrolytic graphite surface, indicating the usefulness of the present analyzer in electron spectroscopy. A brief description of the method for a spectrum transformation from Cartesian coordinates to polar coordinates is also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149696
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  • 5
    Electronic Resource
    Electronic Resource
    A case of serratiopeptidase-induced subepidermal bullous dermatosis (1999)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 141 (1999), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1999.03225.x
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  • 6
    Electronic Resource
    Electronic Resource
    X-Ray Diffraction Patterns of Cuprous Acetate and Cupric Oxyacetate (1952)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 4469-4469 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01137a523
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and electronic transport properties of polycrystalline p-type CoSb3 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5270-5276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electronic transport properties of polycrystalline p-type CoSb3 with different grain sizes (about 3 and 3×102 μm) were investigated. The magnetic susceptibility was also measured. Samples were characterized by x-ray diffractometry, electron-probe microanalysis, and optical microscope observation. Samples were found to be stoichiometric and homogeneous. The Hall carrier concentration of the samples is of the order of 1018 cm−3 and weakly dependent on the temperature. The temperature dependence of the Hall mobility suggests that the predominant scattering mechanism drastically changes depending on grain size: for large grain size a combination of the neutral impurity scattering and the acoustic phonon scattering, and for small grain size the ionized impurity scattering. The magnetic susceptibility was found to be essentially diamagnetic independently of grain size, and to vary slightly with temperature. The weak temperature dependence of the susceptibility can be explained by taking into account the three contributions of ion cores, conduction electrons, and trace amounts of magnetic impurities. From the analysis of the susceptibility due to conduction electrons, the band gap energy was determined to be about 70–80 meV, consistent with a recent band structure calculation. Although the effects of nonmagnetic impurity phases segregated (Sb, etc.) on the scattering mechanism are not clear, the grain size is one of the key factors determining the transport properties of polycrystalline CoSb3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367350
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  • 8
    Electronic Resource
    Electronic Resource
    New counting system for detection of charged particles: application to ions generated by a pulsed laser beam (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1192-1195 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new counting system for charged particles, which is suitable for the counting of pulse trains arriving in a short time, was constructed. The system is composed of a microchannel-plate intensifier, a CCD camera, a frame buffer, a particle counter, and a personal computer. Ion (or electron) pulses incident on the microchannel plate are amplified and then converted to photoradiating spots on a fluorescent screen. The image of the bright spots on the screen is taken by the camera and stored in the frame buffer. The computer processes the stored data and counts the number of bright spots. The performance of the system was examined by applying it to the detection of ions generated by a pulse laser. More than 300 photoions generated by one laser pulse (pulse width: 30 ns) were successfully counted, indicating that the peak counting rate of the system exceeds 1010 cps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141210
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  • 9
    Electronic Resource
    Electronic Resource
    The present status of the Tokyo electron beam ion trap : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 694-696 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent progress of the Tokyo electron beam ion trap (Tokyo-EBIT) project is described. The Tokyo-EBIT is of an original design and construction with several features different from other EBITs in the world. The maximum energy and current of the electron beam are designed to be 340 keV and 300 mA with a magnetic field of 4.5 T. The ongoing and planned physics experiments are described and the results for the initial stage of operation of the Tokyo-EBIT are given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148555
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier confinement by multiple quantum barriers in 1.55 μm strained GaInAs/AlGaInAs quantum well lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2025-2027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier confinement performance by multiple quantum barriers (MQB) is demonstrated in 1.55 μm strained GaInAs/AlGaInAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. The strained MQW lasers with MQB at p-side optical confinement layer show larger characteristic temperature and slope efficiency at high temperature than those without MQB. It is also shown that the MQW lasers with MQB have less spontaneous emission from the optical confinement layer than the lasers without MQB. As another important result, it is demonstrated for the first time that the MQW lasers with MQB have less dependency of the K factor on the temperature than the lasers without MQB. These results further verify the effective carrier confinement performance of GaInAs/AlInAs MQB structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113680
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