Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 368-370
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Specially tailored gated AlxGa1−xAs-GaAs quantum well (QW) structures have been prepared, where it is possible to sweep the maximum of the electron wave function and, thus, the electron density via the gate voltage very effectively from the substrate side of the QW to the front side. In our structure this sweeping is so pronounced that it leads to a unique influence on the actual band structure and cyclotron resonance mass.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101873
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