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  • 1995-1999  (4)
  • 1985-1989  (14)
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  • 1
    Electronic Resource
    Electronic Resource
    5-μm-wide YBa2Cu3O7−δ coplanar line with low transmission loss (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3464-3466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Narrow and low-loss YBa2Cu3O7−δ (YBCO) transmission lines for use in multichip modules have been attempted to be developed. 18-cm-long YBCO coplanar transmission lines with widths down to 5 μm were prepared by a composite patterning process combining Ar-ion milling and wet-etching. The transmission losses of the packaged 5-, 10-, and 25-μm-wide lines, respectively, were −1.57, −0.85, and −0.55 dB at 20 GHz and 55 K. These values provide similar surface resistances of 0.59–0.80 mΩ at 20 GHz and 55 K. This indicates successful fabrication of a 5-μm-wide YBCO coplanar line without notable extrinsic loss increase resulting from process damage. The attenuation constants of these lines are approximately two orders of magnitude lower than for 10-μm-wide Cu microstrip lines. These results show that the YBCO coplanar lines with widths down to 5 μm have great potential for use in multi-chip modules. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119202
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7−x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100499
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of copper deficiency on the structure and microwave properties of YBa2Cu3O7−δ films deposited by laser ablation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2176-2180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The work reported here evaluated the correlation between the copper composition and the structural and microwave properties of YBa2Cu3O7−δ (YBCO) films deposited on MgO substrates. Detailed x-ray diffraction measurements revealed that the superconducting YBCO phase in the films has a solubility range on the copper-poor composition side. The structure of the YBCO phase depends on copper composition: a lower copper composition is associated with a larger c-axis lattice constant and a decreased degree of orthorhombicity. These structural changes correlated well with increases in normal resistivity, decreases of transition temperature Tc, and increases in microwave surface resistance Rs. The films with less copper composition also show a more gradual decrease in Rs below Tc than do copper-rich films. These results suggest that changes in these properties are closely connected with copper deficiency that can occur more easily when the copper composition is low. The copper composition is, therefore, a crucial factor in developing YBCO films with low microwave loss. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368280
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was also epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl2O4/Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO3/MgAl2O4/Si and at 70 K on BaTiO3/MgAl2O4/Si were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100488
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Composition dependence of superconducting properties in Bi2(Sr1−xCax)n+1CunOy (n=2, 3) thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1213-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr1−xCax)n+1CunOy (n=2, 3) system were prepared on (100)MgO substrates by coevaporation of Bi2O3, Sr-Ca alloy, and Cu metal. The lattice constant of the c axis of the low Tc (∼85 K) phase (n=2) decreased with increasing Ca composition x. The superconducting transition temperatures of both the low Tc phase and high Tc (∼110 K) phase (n=3) decreased with increasing x. These tendencies indicated that both the low Tc phase and the high Tc phase have a mutual solubility between Ca and Sr atoms in this Bi system and that the Tc 's of these two phases are related to the c-axis lattice constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100668
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  • 7
    Electronic Resource
    Electronic Resource
    As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101574
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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  • 9
    Electronic Resource
    Electronic Resource
    As-grown crystallized thin film of Bi-Sr-Ca-Cu-O and its low-temperature annealing effect (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1474-1476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The as-grown crystallized films of low Tc phase (Tc∼80 K) in a Bi-Sr-Ca-Cu-O system were prepared by rf magnetron sputtering and were annealed in argon or oxygen atmosphere below 500 °C. Superconducting properties and the c-axis lattice constant varied according to the annealing temperature and atmosphere. These results suggest that the oxygen content in the film is varied by low-temperature annealing and that the variation of oxygen content affects the superconducting and structural properties. By cooling the sample in the chamber in 760 Torr oxygen, the as-grown film with Tc end at 74 K was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101408
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  • 10
    Electronic Resource
    Electronic Resource
    Structure and superconducting properties of Y1Ba2Cu3O7−δ films prepared by transversely excited atmospheric pressure CO2 pulsed laser evaporation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Y1Ba2Cu3O7−δ films were prepared by TEA-CO2 pulsed laser evaporation. On SrTiO3(100) the a axis was oriented perpendicular to the substrate surface, while the 〈110〉 axis was oriented perpendicular to the substrate surface on SrTiO3(110). Sharp resistive superconducting transitions with zero resistance at 86 K on SrTiO3(110) and at 83 K on SrTiO3(100) were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99228
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