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  • 1
    Electronic Resource
    Electronic Resource
    NO monomer and (NO)x polymeric chain chemisorption on Pt{110}: Structure and energetics (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 12082-12088 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemisorption of NO on Pt{110}-(1×1) and -(1×2) has been studied using density functional theory slab calculations with the generalized gradient corrections. On both surface phases the monomeric species is the most stable and the short-bridge sites are energetically the most favorable adsorption sites. Monomeric NO is adsorbed upright with its molecular axis normal, bonded to the surface through the N atom. On the (1×2) surface at high coverage a polymeric (NO)x chain structure is identified; this may well correspond to the structure experimentally observed at high coverage on the (1×2) surface formed after heating a multilayer to temperatures between 80 K and 200 K, characterized by an NO IR band at 1760 cm−1. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479143
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  • 2
    Electronic Resource
    Electronic Resource
    Residual stress behavior of thin plasma-enhanced chemical vapor deposited silicon dioxide films as a function of storage time (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3129-3133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual stress in thin silicon dioxide films has been studied as a function of storage time. Films of varying microstructure and impurity content were deposited by plasma-enhanced chemical vapor deposition. Initially, all the films exhibited compressive stress, the magnitude of which was found to increase rapidly with time for the first few hours after deposition. For all the deposited thin films, this increasing compressive stress eventually saturates and then begins to decrease with time. The time at which the transition occurs depends on film thickness and quality, whereas, for relatively thicker films deposited under identical conditions, a saturation in compressive stress after long aging time was observed. No existing model of thin oxide films successfully explains the observed time variation of stress. In this paper, the variation of film stress as a function of storage time and film properties, such as porosity and impurity content, is discussed. Three driving forces, namely, surface reactivity, silanol buildup, and water dipole interaction, each of whose contribution varies depending on film thickness and quality, have been identified as potential mechanisms behind stress change in oxide films. A unified model consisting of these driving forces can explain the time variation of stress behavior in oxide films, irrespective of film quality and thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364347
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  • 3
    Electronic Resource
    Electronic Resource
    Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7529-7536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum metal-induced crystallization and doping of hydrogenated amorphous silicon (a-Si:H) have been investigated. Aluminum was evaporated onto device quality a-Si:H films deposited in an ultrahigh vacuum plasma-enhanced chemical vapor deposition system. These Al/a-Si:H structures were annealed in the 100–300 °C range. Electrical, surface morphological, and chemical characterizations of the material were performed. The transmission line model technique was used for electrical characterization. Raman spectroscopy showed that crystallization of the interacted a-Si:H film underneath Al pads initiates at temperatures as low as 180 °C. X-ray diffraction analysis showed very good polycrystallinity of the interacted film. Electrical measurement, Hall measurement and x-ray photoelectron spectroscopy analysis results revealed that a-Si:H film in contact with Al becomes heavily doped by Al during crystallization as a result of annealing at relatively low temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362425
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  • 4
    Electronic Resource
    Electronic Resource
    Variation in stress with background pressure in sputtered Mo/Si multilayer films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2423-2430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the stress in Mo/Si multilayer films deposited by magnetron sputtering, using the wafer-curvature technique, and find a strong dependence on background pressure. We find that for multilayers containing 40 bilayers of ∼4.3 nm Si layers and ∼2.6 nm Mo layers, the stress increases from approximately −280 MPa (compressive) to −450 MPa as the background pressure in the deposition chamber (i.e., measured just prior to deposition) decreases from 1.0×10−5 to 6.0×10−8 Torr. For multilayers of the same period but with thicker Mo layers, the dependence on background pressure is even stronger. X-ray (λ=0.154 nm) diffraction measurements reveal only a slight increase in interfacial roughness for films deposited at high background pressure, but no evidence was found for any differences in the microstructure of the polycrystalline Mo layers that comprise these structures. The peak soft x-ray (λ=13 nm) reflectance, which is sensitive to interfacial roughness at longer spatial wavelengths, also shows no correlation with background pressure or stress. Atomic concentrations of incorporated oxygen and carbon, measured with Auger electron spectroscopy, were found to be less than ∼0.5 at. % for all samples. However, the average hydrogen concentration, as determined from forward-recoil-scattering measurements made using a 2.6 MeV He beam, was found to increase linearly with background pressure. We discuss possible mechanisms for the observed dependence of film stress on background pressure, including gas incorporation and the affect of residual gas atoms on adatom mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360164
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characterization of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited silicon dioxide metal–oxide–silicon structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1968-1972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide metal–oxide–silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance–voltage characteristics. Nitridation at 1000 °C for 15 s followed by re-oxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation for 60 s with no re-oxidation. Typical values of fixed charge and interface state densities for devices subjected to nitridation and re-oxidation in a mixture of oxygen and nitrogen were 4×1010 cm−2 and 7×1010 eV−1 cm−2, respectively. Avalanche electron injection using electric fields of 3–3.5 MV/cm produced positive shifts in flatband voltage for devices nitrided at 1000 °C for 15 s followed by re-oxidation, whereas samples nitrided at 1000 °C for 60 s without the re-oxidation yielded negative shifts in flatband voltage. An electron barrier height of 2.4 eV was found for these nitrided samples. These results strongly suggest that device quality MOS dielectrics for high-voltage power MOS field-effect-transistors can be realized by nitridation/re-oxidation of LPCVD oxide. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361047
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic field and temperature dependence of critical current densities in multilayer YBa2Cu3O7−δ films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6593-6595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to build high-temperature superconductor (HTS) multichip modules (MCMs), it is necessary to grow several epitaxial layers of YBCO that are separated by thick dielectric layers without seriously affecting the quality of the YBCO layers. In this work, we have successfully fabricated YBCO/YSZ/SiO2/YSZ/YBCO structures on single-crystal LaAlO3 substrates using a combination of pulsed laser deposition for the YBCO layers and ion-beam-assisted rf sputtering to obtain biaxially aligned YSZ intermediate layers. The bottom YBCO layer had a Tc∼89 K, Jc∼7.2×105 A/cm2 at 77 K, whereas the top YBCO layer had a Tc∼86 K, Jc∼6×105 A/cm2 at 77 K. The magnetic field and temperature dependence of Jc for the YBCO films in the multilayer have been obtained. The results for each of the YBCO layers within the YBCO/YSZ/SiO2/YSZ/YBCO structure are quite similar to those for a good quality single-layer YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361884
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  • 7
    Electronic Resource
    Electronic Resource
    Sputter-deposited yttrium–barium–copper–oxide multilayer structures incorporating a thick interlayer dielectric material (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2003-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical vapor deposition technologies have been developed which allow the fabrication of multilayer structures consisting of two yttrium–barium–copper–oxide (YBa2Cu3O7−x or YBCO) layers separated by a thick (∼4 μm), low dielectric constant material. The YBCO is buffered from both the substrate and the other films with ion-beam assisted deposited (IBAD) films of yttria-stabilized zirconia (YSZ). The YSZ layer provides both the texture necessary to deposit high-quality YBCO films and protection from the insulating layer material. Using these deposition processes, a variety of materials, such as Pyrex and Haynes alloy, may be used for the substrate. The critical temperature and current values obtained for the two YBCO layers of the completed structure were on the order of 85 K and 2×105 A/cm2, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361052
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  • 8
    Electronic Resource
    Electronic Resource
    A light scattering investigation of the sodium dodecyl sulfate–lysozyme system (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 8112-8117 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Dynamic and static light scattering measurements have been made on lysozyme solutions at 25 °C in 0.1 M phosphate buffer, pH 6.88, in the presence of sodium dodecyl sulfate (SDS). The concentration of SDS has been varied over a wide range (0–0.2 g/ml). It is found that under these conditions both SDS micelles and lysozyme(Lys)–SDS complexes coexist. Addition of lysozyme at constant SDS concentration leads to formation of more lysozyme–SDS complex. The translational diffusion coefficient of the complex increases with SDS concentration. It is also found that two lysozyme molecules are associated in the protein–surfactant complex. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471496
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization and orientation of adsorbed NO dimers on Ag{111} at low temperatures (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7277-7280 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reflection-absorption infrared spectroscopy (RAIRS) and near-edge x-ray absorption fine structure (NEXAFS) have been used, with isotopic 14NO/15NO mixtures, to determine the structure and orientation of the monolayer species formed by NO adsorption on Ag{111} at 40 to 60 K. The adlayer is composed of NO dimers bonded with the N–N axis in the surface plane and with the molecular plane tilted away from the surface normal by about 30°. This structure provides a simple basis for understanding the facile reaction to adsorbed N2O and O which occurs on heating to 70 to 90 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469039
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  • 10
    Electronic Resource
    Electronic Resource
    The Influence of Industrial and Spatial Structure onCanada-U.S. Regional Trade (1999)
    Boston, USA and Oxford, UK : Blackwell Publishers Inc.
    Growth and change 30 (1999), S. 0 
    Details
    ISSN: 1468-2257
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geography , Economics
    Notes: Data on trade flows between states and provinces in the year 1992 are analyzed in order to explore the regional structure of Canada–U.S.trade. An index of integration based on the these data shows significant variation in levels of interdependence across pairs of regions on opposite sides of the border. Most of this variation appears to stem from patterns of intermediate goods trade. Further analysis is conducted to distinguish between pairs of regions with similar industrial structures which are highly integrated due to intra-industry trade and pairs with complementary industrial structures that are highly integrated due to inter-industry trade. The friction of distance appears to play a major role in distinguishing between these two types of relationships. Specifically, trade can be quite strong between regions with similar industrial structures, but this trade tends to be limited to regions in close geographic proximity. As the distance between regions increases, trade based on different but complementary industrial structures becomes increasingly dominant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/0017-4815.00103
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