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  • 1995-1999  (40)
  • 1945-1949  (4)
  • 1925-1929  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Comment on "Onsager symmetry for inhomogeneous magnetized plasmas" [Phys. Plasmas 3, 4325 (1996)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3091-3093 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An effective dielectric tensor for inhomogeneous magnetized plasmas was previously derived using a modified local mode approximation. We give a brief account of this derivation from a paper by Caldela Filho et al. (1989) to restate their priority. (AIP) © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872448
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor-phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3077-3087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of metalorganic vapor-phase epitaxy alloys of (In,Ga)P grown on GaAs substrates were examined using transmission electron microscopy. Alloys examined were grown at 600–775 °C on substrates at or near (001) or (113)A using growth rates of 0.69 and 0.17 nm/s. Two common semiconductor alloy phenomenon, ordering and phase separation, were studied over this range of growth conditions. The CuPt-type ordering reflections are sharpest for growth at 675 °C and more diffuse at 600 and 725 °C due to higher densities of antiphase boundaries. Order can be eliminated by growth at 750 °C or above to obtain the highest band gaps and optical emission energies. Detailed investigation of the microstructure for growth at 675 °C indicates that ordered domains are platelets consisting of thin (1–2 nm) lamella on (001) planes that alternate between the two {111}B ordering variants, in agreement with a model proposed by others. We have formed "unicompositional'' quantum wells with sharply defined ordered layers between disordered barrier layers by changing growth temperature, which demonstrates that ordering is determined to a great degree by the conditions during growth. Phase separation is seen for the entire range of growth parameters, independently of ordering; its contrast shows modulations with a variable spacing ranging from a few nanometers to ∼100 nm. Implications of the coexistence of phase separation and ordering for growth models describing these phenomena are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358659
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  • 3
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform wetting layer is clearly visible. Dark contrast features with a distinctly larger extension into growth direction mark the location of quantum dots. Individual quantum dots can be identified in high-resolution imaging both by lattice expansion and contrasts arising from their strain fields. Plan-view images show the coexistence of two classes of quantum dots with an average lateral size of ≤10 nm (area density 100 μm−2) and 10–50 nm (20 μm−2), respectively. The shape of the larger entities is pyramidlike. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120984
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  • 4
    Electronic Resource
    Electronic Resource
    Modal analysis of a small surface emitting laser with a selectively oxidized waveguide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe studies of an index-guided ∼4×3 μm2 vertical cavity surface emitting laser with a cw, room temperature 133 μA threshold current and 53% slope efficiency fabricated using selective wet thermal oxidation to provide optical and electrical confinement. While the device operates strictly single mode, a large number of transverse modes are evident in the subthreshold luminescence observed in both vertical and lateral directions. Despite the lumped nature of the index region, the transverse mode wavelengths agree very well with those predicted for a conventional distributed waveguide structure. Waveguide dimensions and an effective index step of 2% between the active and cladding region are determined by fitting the modal data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113102
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  • 5
    Electronic Resource
    Electronic Resource
    Band gap of "completely disordered'' Ga0.52In0.48P (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3185-3187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of ordering in Ga0.52In0.48P is well known to reduce the optical band gap; the amount of band gap reduction is often used to measure the degree of ordering. For such measurements to be meaningful, the band gap of the random ("completely disordered'') binary alloy must be known. Values of this fundamental material parameter appearing in the literature vary by up to 40 meV, while the largest band gap reduction reported to date is only about 120 meV, i.e., within a factor of 3 of the uncertainty in one endpoint. We report here a low temperature band gap of 2.010±0.007 eV for material lattice matched to GaAs as deduced from a broad spectrum of samples believed for different reasons to contain minimal ordering. The corresponding value at 295 K is 1.910±0.008 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113717
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  • 6
    Electronic Resource
    Electronic Resource
    Temporal response of a high-Tc superconducting field effect transistor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2075-2077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x/SrTiO3/Au multilayer systems have been prepared in situ by pulsed laser deposition onto (100) SrTiO3 substrates. An electric field controlled device was patterned by suitable metal masks applied successively during the deposition process. The switching time of the superconducting source-drain channel has been studied at T=4.2 K applying rectangular pulses to the gate electrode. We find that the source-drain voltage follows the gate voltage variation in accordance with the RC time constant of the device. Our result is consistent with the mechanism of direct charge transfer by the electric field, but inconsistent with a model based on electric field driven migration of the oxygen atoms in the CuO chains of YBa2Cu3O7−x which predicts characteristic times in the order of minutes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115083
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  • 7
    Electronic Resource
    Electronic Resource
    Cavity characteristics of selectively oxidized vertical-cavity lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3413-3415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a buried oxide layer forming a current aperture in an all epitaxial vertical-cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulated, independent of the as-grown cavity resonance, by adjusting the oxide layer thickness and its placement relative to the active region. In addition, the electrical confinement afforded by the oxide layer enables record low threshold current densities and threshold voltages in these lasers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113371
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  • 8
    Electronic Resource
    Electronic Resource
    Transient photoinduced absorption in (AlxGa1−x)0.5In0.5P fractal quantum well heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 966-968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond photoinduced absorption measurements have been performed on four different (AlxGa1−x)0.5In0.5P fractal quantum well heterostructures. The results of these measurements reveal that, at early times following pulsed excitation, the carriers remain near the surface layer in which they were photogenerated, and populate the higher lying branches of the V-shaped fractal structure. With increasing time, the carrier population relaxes toward the lowest energy, central wall. The rate at which the relaxation occurs is governed by the characteristic layer of widths of the fractal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117097
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  • 9
    Electronic Resource
    Electronic Resource
    Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115434
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  • 10
    Electronic Resource
    Electronic Resource
    High critical current densities of YBa2Cu3O7−x thin films on buffered technical substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 661-663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C-axis oriented YBa2Cu3O7−x (YBCO) thin films were deposited on polycrystalline metallic tapes buffered with yttria stabilized zirconia (YSZ). The in-plane alignment of the YSZ layers achieved by simultaneous ion bombardment of the growing film (ion beam assisted deposition) and of the postdeposited YBCO thin films was studied by x-ray diffraction as a function of the buffer layer thickness. A significant improvement of the in-plane texture, achieved for buffer layers exceeding a thickness of about 1.5 μm, resulted in high critical current densities above 106 A/cm2 of the YBCO films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118326
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