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  • 1
    Digitale Medien
    Digitale Medien
    Interfacial defects in silicides on Si(100): "Coreless defects,'' 1/12〈111〉 dislocations, and twinning mechanisms (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4064-4066 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: "Coreless defects'' are one of the long-standing surprises of silicide epitaxy on Si. For symmetry reasons a NiSi2 or CoSi2 film cannot grow over a step on Si(100), but must incorporate a dislocation; apparently, however, very thin films avoided this dislocation by introducing a trench through the silicide, the coreless defect. Here we use high-resolution microscopy, electron diffraction and dark-field imaging to show that these defects are in fact microtwins ≈4 atomic planes thick. The twins are highly unusual in that they follow curved lines, apparently dictated by steps at the interface. A mechanism for the formation of these curved twin defects by repeated formation of a 1/12〈111〉 interfacial partial at steps is postulated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352829
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  • 2
    Digitale Medien
    Digitale Medien
    Control of interfacial morphology: NiSi2/Si(100) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 478-489 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structure and morphology of thin and ultrathin epitaxial NiSi2 layers on Si(100) grown by various techniques have been studied in detail. Very high-quality single-crystal NiSi2 layers have been grown on Si(100). Codeposition of stoichiometric NiSi2 at low temperatures followed by subsequent annealing at high temperatures (≥700 °C) has been shown to eliminate the most common problem for this epitaxial system, namely, faceting at the interface. Line defects, associated with interface roughness, were also greatly reduced in films grown by this method. Interfacial faceting and defects at interface domain boundaries appear to be related to the growth kinetics and are not due to energetic advantages, as previously thought. Discrete spots around the (01/2 1/2)-related reflections were observed by transmission electron diffraction from some planar NiSi2 layers, suggesting the existence of superstructures at portions of the NiSi2/Si interface. Low-energy electron diffraction indicated the existence of a highly ordered surface reconstruction for well-annealed films. Possible growth models, as well as the implications of possible structural inhomogeneity on interface electron transport measurements, are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351878
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  • 3
    Digitale Medien
    Digitale Medien
    Single-crystal Si/NiSi2/Si(100) structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8250-8257 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-quality, uniform, Si/NiSi2/Si(100) structures were demonstrated by a combination of molecular-beam epitaxy and postgrowth, high-temperature annealing. A Si template technique ensures the epitaxial orientation of the Si overlayer. The unusual inverse Volmer–Weber mode observed during the growth of Si on NiSi2(100) is shown to be a result of interface and surface energetics. The evolution of the interface morphology of the double-heteroepitaxial structures is discussed in terms of thermodynamics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353443
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  • 4
    Digitale Medien
    Digitale Medien
    Comment on "Current transport in Pd/n-InP diodes formed at room and low temperature'' [J. Appl. Phys. 72, 3803 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7993-7993 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is pointed out that, under most circumstances, current transport characteristics observed at Schottky barrier junctions cannot be used to unambiguously identify the mechanism responsible for electron conduction. This practice, however, is quite common and is shown to lead to an incorrect conclusion in a recent article [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1992)].
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353914
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  • 5
    Digitale Medien
    Digitale Medien
    Electron transport of inhomogeneous Schottky barriers: A numerical study (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7403-7424 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Numerical simulations are presented of the potential distribution and current transport associated with metal-semiconductor (MS) contacts in which the Schottky barrier height (SBH) varies spatially. It is shown that the current across the MS contact may be greatly influenced by the existence of SBH inhomogeneity. Numerical simulations indicate that regions of low SBH are often pinched-off when the size of these regions is less than the average depletion width. Saddle points in the potential contours in close proximity to the low-SBH regions, which are shown to vary with the dimension and magnitude of the inhomogeneity as well as with bias, essentially determine the electron transport across the low-SBH regions. It is these dependences of the saddle point which give rise to various abnormal behaviors frequently observed from SBH experiments, such as ideality factors greater than unity, various temperature dependences of the ideality factor, including the T0 anomaly, and reverse characteristics which are strongly bias-dependent. The results of these numerical simulations are shown to support the predictions of a recently developed analytic theory of SBH inhomogeneity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349737
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  • 6
    Digitale Medien
    Digitale Medien
    The precipitation of kinks on stepped Si(111) surfaces (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 8384-8389 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: High resolution low-energy electron diffraction, scanning tunneling microscopy (STM), and transmission electron microscopy (TEM) have been used to study the temperature dependence of a vicinal (stepped) Si(111) surface with a polar angle of 6° from (111) along an azimuth rotated about 10° away from the high symmetry [1¯1¯2] direction. At the (1×1) to (7×7) reconstructive transition, the kinks at the step edges precipitate into a phase with high step density and increased rotation from the [1¯1¯2] direction, leaving behind a [1¯1¯2] oriented phase with triple-layer height steps and (7×7) reconstruction. The inclination and azimuth of the orientation of the kinked phase change continuously with temperature. When the surface is cooled to room temperature, STM images confirm a coexistence between the [1¯1¯2] oriented step-tripling phase and the kinked phase. In the step-tripling phase, the steps are very straight (kinks are rare) and oriented in the [1¯1¯2] direction. There is a small fraction of single-layer height steps between the predominant triple-layer height steps. All the terraces in this phase are (7×7) reconstructed. In the kinked phase, steps with a high density of kinks are bunched together and rotated to a direction about 45° away from [1¯1¯2]. TEM images of the surface topography also confirm the phase coexistence on a macroscopic scale. This phase separation (azimuthal faceting) is reversible, and can be understood thermodynamically by analogy with phase separation in a two-component fluid.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.460070
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  • 7
    Digitale Medien
    Digitale Medien
    Comment on "Numerical study of electrical transport in homogeneous Schottky diodes" [J. Appl. Phys. 85, 1935 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7366-7367 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In a recent article [J. Appl. Phys. 85, 1935 (1999)], Osvald simulated forward and reverse current–voltage and capacitance–voltage characteristics of inhomogeneous Schottky barrier (SB) diodes and concluded that the currents flowing in interacting and noninteracting inhomogeneous SBs were largely identical. This Comment points out the inappropriateness of some of the conditions chosen for these simulations which likely has rendered that conclusion untenable. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1324996
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  • 8
    Digitale Medien
    Digitale Medien
    Effect of ultrathin Mo and MoSix layer on Ti silicide reaction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3655-3660 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The presence of a small amount of Mo was shown to have a significant effect on the C49–TiSi2 to C54–TiSi2 phase transformation in the Ti–Si reaction. The formation of the C54–TiSi2 phase was facilitated when an ultrathin layer of either Mo or α-MoSix was inserted at or close to the Ti/Si interface. Mo deposited on the surface of Ti had no beneficial effect on the Ti–silicide reaction; neither did Mo implanted into preexisting C49–TiSi2 films. The optimum thickness of interfacial Mo and α-MoSix layers was found to be less than 0.3 nm. Transmission electron microscopy and diffraction investigations demonstrated that Mo did not alter the sequence of the Ti–Si reaction, as proposed in recent studies. Rather, the most obvious effect of molybdenum was a reduction of the grain size of the C49–TiSi2 phase, which could lead to an increase in the nucleation density of the desired C54–TiSi2 phase and account for the observed reduction in formation temperature. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371274
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  • 9
    Digitale Medien
    Digitale Medien
    Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7820-7829 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)((square root of)3×(square root of)3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n- and p-type silicon wafers. Our data strongly suggest that the Schottky barrier heights (SBHs) are spatially nonuniform. The distribution of local effective SBHs at the epitaxial interfaces is modeled by a summation of a single Gaussian, representing the spread in SBH for the majority of the contact, and two half-Gaussians which represent the high- and low-barrier tails of the full distribution. Despite the fact that the average SBHs of the epitaxial interfaces are hardly structure dependent, the SBH distributions are very broad and markedly different for each interface. The polycrystalline interfaces are characterized by a narrower SBH distribution centered at a substantially smaller mean. We argue that the electrical inhomogeneity is related to structural inhomogeneity at the interface which is a direct consequence of the kinetics and mode of growth of Ag on Si. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362390
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  • 10
    Digitale Medien
    Digitale Medien
    Electron transport of inhomogeneous Schottky barriers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2821-2823 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel approach is presented which leads to analytic solutions to the potential and the electron transport through inhomogeneous Schottky barriers. The existence of barrier height nonuniformities is shown to provide a simple explanation of the following abnormal experimental results, routinely observed from various Schottky barriers: greater-than-unity ideality factors, the T0 effect, the "soft'' reverse characteristics, and the dependence of barrier height on the technique of measurement.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104747
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