Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electron transport of inhomogeneous Schottky barriers: A numerical study (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7403-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations are presented of the potential distribution and current transport associated with metal-semiconductor (MS) contacts in which the Schottky barrier height (SBH) varies spatially. It is shown that the current across the MS contact may be greatly influenced by the existence of SBH inhomogeneity. Numerical simulations indicate that regions of low SBH are often pinched-off when the size of these regions is less than the average depletion width. Saddle points in the potential contours in close proximity to the low-SBH regions, which are shown to vary with the dimension and magnitude of the inhomogeneity as well as with bias, essentially determine the electron transport across the low-SBH regions. It is these dependences of the saddle point which give rise to various abnormal behaviors frequently observed from SBH experiments, such as ideality factors greater than unity, various temperature dependences of the ideality factor, including the T0 anomaly, and reverse characteristics which are strongly bias-dependent. The results of these numerical simulations are shown to support the predictions of a recently developed analytic theory of SBH inhomogeneity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349737
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Elimination of heterojunction band discontinuities by modulation doping (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 466-468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction- or valence-band discontinuities occurring at the junction of two heterogeneous semiconductors can be eliminated by appropriate doping of the interfacial region. We show by analytic and self-consistent calculations that simultaneous modulation doping and parabolic compositional grading result in flat band-edge potentials. The new concept is applied to distributed Bragg reflectors for vertical cavity lasers. The structures grown by molecular-beam epitaxy exhibit significantly lower resistances as compared to step-graded distributed Bragg reflectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106636
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 226-228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low thermal budget emitter contact with low specific contact resistivity (ρc) with the absence of transient enhanced diffusion (TED) effects is essential to fabricate integratable high performance Si/SiGe heterojunction bipolar transistors (HBTs). We report the use of in situ As-doped polycrystalline silicon (polysilicon) from a low base pressure rapid thermal episystem for this purpose and find that it meets all the requirements. We used secondary ion mass spectrometry to find that 18 nm, heavily B-doped layers remain intact after implantation into the surface polysilicon and annealing at 800 °C for 40 s. Similar samples without the surface polylayer displayed extreme broadening of B profile. Kelvin crossbridge resistors together with 2D device simulations revealed that ρc is an extremely low value of 1.2×10−8 Ω cm2 in as-deposited material. Fabrication of simple 30×30 μm2 mesa isolated HBT devices showed IC to be more than two decades higher in devices with only an in situ As-doped polyemitter compared with devices that incorporated a surface implant into the single crystal portion of the emitter before polysilicon deposition. These results demonstrate that this doped polycrystalline silicon material is an excellent choice for emitter contacts to HBT devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116468
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3315-3317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional scaling of the Si MOSFET into the deep submicron regime requires high substrate doping levels. This extracts a severe speed penalty, if lower standby power consumption (i.e., good subthreshold behavior) is to be maintained. We explore the scaling of fully depleted silicon-on-insulator (SOI) structures, and show, both analytically and by numerical simulation, how the horizontal leakage is controlled by vertical doping engineering. Our analysis allows different structures to be evaluated in terms of a natural length scale indicating good subthreshold behavior. Finally, we describe how retrograde doping may be used to mimic the SOI concept in bulk Si. Our results show good subthreshold behavior in the deep submicron regime can be achieved without large junction capacitance, high threshold voltage, or heavy channel doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105717
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Non-random in vitro 7;14 translocations detected in a routine cytogenetic series. 12 Examples and their possible significance (1984)
    Springer
    Human genetics 〈Berlin〉 66 (1984), S. 157-161 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary This study describes 12 examples of translocations between chromosomes 7 and 14 in short-term peripheral blood lymphocyte cultures from 10 patients investigated in a routine cytogenetic series. Only one constant breakpoint was found on 14q, and chromosome 7 had two constant breakpoints, one on 7p and the other on 7q. The cause and true significance of such nonrandom in vitro chromosome translocations is not known at present, but one may speculate as to their possible indication of heterozygosity for a chromosome instability syndrome and thus a predilection for the development of lymphoid or other malignancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00286591
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ueber die gerichtlich-chemische Untersuchung (1894)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 33 (1894), S. 504-504 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01335886
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The acrosomal region of the spermatozoon of Ciona intestinalis: Its relationship with the binding to the vitelline coat of the egg (1985)
    New York, NY : Wiley-Blackwell
    Gamete Research 11 (1985), S. 379-389 
    Details
    ISSN: 0148-7280
    Keywords: spermatozoon ; acrosome ; binding ; Ciona intestinalis ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology
    Notes: This paper describes a study of the apical region of the spermatozoon of Ciona intestinalis before and during its binding to the vitelline coat of the egg. A combination of the techniques of thin sectioning, negative staining, and freeze fracture has revealed that in the apical-most region, where a small acrosomal vesicle lies on the flat tip of the nucleus, there is a cap-like region almost completely free of particles on the P face of the plasma membrane. The particle-free area is surrounded by two circlets of orderly arranged particles. Upon binding to the vitelline coat the particles of the distal circlet show a partial displacement, while the particles of the apical circlet remain unaltered. The relationship between the apical circlet and the binding process is discussed. The final step of the acrosome reaction, which occurs in only a few of the bound spermatozoa, consists in the fusion of the plasma membrane with the acrosomal membrane, in the dehiscence of the acrosomal contents and finally in the formation of membrane tubules.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mrd.1120110405
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...