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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4536-4537 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method of fabrication of layered structure of silicon is presented. The silicon was evaporated continuously under a modulated pressure of hydrogen. A contrast was dense and less dense silicon layers is evidenced by low-angle x-ray scattering and cross-sectional electron microscopy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 483-485 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exodiffusion and low-angle neutron scattering experiments are used to investigate the influence of tin on the hydrogen stability in evaporated amorphous Si1−xSnx (0≤x≤0.2) alloys. The neutron diffraction experiments, which are performed on Si1−xSnx:H/Si1−xSnx:D/... multilayers, consist in following the decay of the diffracted intensity during thermal treatments. Both studies give information on the structure of the alloys and show that the hydrogen stability decreases with increasing tin concentration.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic exchange coupling in metallic superlattices of [Dy||Er], grown by molecular-beam epitaxy, has been examined by neutron diffraction. In a superlattice of 65-A(ring) layers of Dy and 55-A(ring) layers of Er, distinct ordering temperatures were observed for the Dy and Er layers. Basal plane helical ordering of the Dy layers was initiated at temperatures close to TN for bulk Dy (178 K) with a long-range interaction, preserving both phase and chirality, mediated through the Er layers. At a temperature near 70 K, the helical coupling of the Dy spins is replaced by an antiferromagnetic coupling of adjacent ferromagnetically ordered Dy layers coexisting with a remanent helical order. At a temperature well below TN of bulk Er, c-axis ordering of the Er spins occurs in the superlattice, and in measurements at 10 K there is evidence of basal plane moment ordering in the Er.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1371-1376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the observed contrast in transmission electron microscope images of multilayer specimens composed of amorphous materials can be understood in terms of the scattering of electrons passing through the material. This leads us to develop a simple method of analyzing the image contrast to give quantitative information about the thicknesses of individual layers, which cannot be obtained by any other technique. The results of this analysis for images of silicon/germanium and silicon/iron multilayers are in good agreement with the results of small-angle x-ray scattering and the readings of quartz thickness monitors during the deposition of the layers. The accuracy of the thickness measurements we obtain from transmission electron microscope images is 7% for the average layer thickness of a single component and 10% for the thickness of individual layers when the layer thickness is about 4 nm, which is comparable to the accuracy which can be attained for crystalline layers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2984-2987 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multilayers were obtained by evaporation from two electron gun crucibles. The thicknesses and the evaporation rates were controlled by standard quartz monitoring systems (QMS). A method to resolve the problems of the instability and of the lack of resolution of the instrument by smoothing the information provided by the QMS is presented. With this method, the quality of the multilayers' periodicity is improved. Si/Ge nanoscale multilayers with an accuracy of ±0.5 A(ring) on the individual thicknesses were obtained.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3154-3154 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of structural disorder on the valence of cerium in different families of amorphous alloys prepared by coevaporation on to cryogenic substrates. The Ce electronic configuration was characterized by LIII x-ray absorption spectroscopy and bulk magnetization measurements. Special attention was paid to the amorphous analogs of prototypic Kondo and strongly mixed valent compounds in the crystalline state, such as Ce Si2 (TK(approximately-equal-to)200 K), CemNin, CemCon. The cerium was found to be purely trivalent in amorphous CexSi1−x (0≤x≤0.75) alloys over both the metallic and nonmetallic concentration ranges, so that the weakly mixed valent state in crystalline CeSi2 is believed to rely on details of the crystalline symmetry and band structure. In contrast, the cerium was found to remain mixed valent in amorphous CexCo1−x (0.15≤x≤0.75) and CexNi1−x (0.30≤x≤0.60) alloys, without any significant effect of the structural disorder. The concentration dependence of the Ce valence anomaly was found to be different in the Ce Ni and Ce Co alloys. This different behavior is discussed in terms of electronic band structure.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3554-3554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the 59Co and 119Sn hyperfine fields in amorphous CoSn alloys obtained by coevaporation onto cryogenic substrates. 59Co spin-echo spectra were measured at 1.4 K in zero-applied field on ferromagnetic Cox Sn1−x (0.65≤x≤0.80) alloys. NMR spectra display peaks. These peaks have a relative intensity which varies with composition, but their average location in frequency is concentration independent. From a comparison with 59Co NMR spectra in crystalline Co with dilute Sn impurities, it is inferred that the structures observed in NMR spectra for amorphous CoSn alloys are related to the number of Sn first neighbors of the Co resonant nuclei. Thus, short-range effects are thought to be predominant in determining the Co on-site moments in these alloys, as well as in amorphous Co alloys with other s-p elements. 119Sn Mössbauer spectra were measured at room temperature on paramagnetic Cox Sn1−x (0.40≤x≤0.55) alloys. Comparison is made with the stoichiometric CoSn crystalline compound, where quadrupolar interactions give rise to an admixture of two doublets corresponding to the two inequivalent Sn sites. Mössbauer spectra for the amorphous CoSn alloys display a single doublet identified as arising from Sn atoms in trigonal prisms arrangements. These results are discussed within the frame of current models for the structure of metallic glasses.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1229-1233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusivity and chemical ordering in compositionally modulated (Λ=20 to 40 A(ring)) amorphous Fe70Si30/Si thin films have been measured from the decay of the satellite intensities of the (000) x-ray scattering peak during isothermal anneals in the temperature range 373–473 K. Diffusivities as low as 10−26 to 10−25 m2 s−1 have been measured. A linear dependence of D˜Λ on 1/Λ2 has been observed, providing the evidence of chemical ordering in Fe-Si alloy and leading to the determination of a critical wavelength.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2300-2301 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evaporation on substrates maintained at 77 K under an atomic hydrogen flow allows us to prepare amorphous semiconductor tin. The resistivity is very high, 3×103 Ω cm and the diffraction pattern is typical of the random continuous networks of amorphous germanium and silicon. This structure is stable up to 180 K.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1103-1106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited by ion-beam-assisted evaporation using a hydrogen–argon plasma. The influence of the substrate temperature was studied. Light induced photoconductivity decay measurements showed that high stability materials can be obtained under well defined conditions. By combined infrared spectrometry and thermal desorption spectrometry experiments, it was demonstrated that microstructure has a great influence on the stability against light induced defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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