Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2804-2806
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1–2 nm linewidth. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116849
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