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  • 1995-1999  (4)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1296-1299 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new and stable scanning tunneling microscope (STM) system has been constructed for the investigation of thin organic films in air. The STM unit is made of Macor, which is machinable ceramic and has a small thermal expansion coefficient and a high mechanical stiffness. Three-dimensional coarse position adjustment (within 3 μm) is carried out using five stacked piezoelectric transducers (PZTs). A cross-type configuration is used to prevent the thermal effect of the x- and y-direction displacement mechanism. In order to achieve high resolution, x-, y-, and z-direction displacements are performed using a tube-type PZT. The z direction of the tube PZT has a high mechanical resonant frequency of 24.4 kHz. Therefore, this STM unit is mechanically rigid, and allows stable operation under mechanical disturbances (sound and mechanical vibration). Moreover, this STM unit can be controlled for 24 h or longer by using an ordinary operational amplifier, because thermal effects are compensated. The STM system can also be used to obtain information on the spatially resolved local tunneling barrier height, which is sensitive to the chemical structure of the sample. The capabilities of this newly designed STM are demonstrated with experiments investigating the morphology and tunneling barrier height of stearic acid thin films on indium-tin-oxide substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2190-2192 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic MnSb layers were grown on GaAs(100) substrates by hot-wall epitaxy. Structural and magnetic properties of the MnSb layers are examined by reflection high-energy electron diffraction and vibrating sample magnetometry, respectively. It is found that MnSb with a NiAs-type crystalline structure can be grown epitaxially on GaAs(100) with inclination of the c axis of MnSb towards GaAs[011] and [011] direction by 53°. This inclination growth causes in-plane anisotropy of the magnetic property of the layer. The simple growth technique of the ferromagnetic layers on compound semiconductor substrates indicates high potentiality of development in magnetic material—III-V semiconductor hybrid devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5946-5950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra have been measured for ZnTe/CdSe superlattices grown by hot wall epitaxy. A mechanical vibrational interface phonon (MVIF) mode localized at the Zn–Se interface is distinctly observed in addition to quasiconfined longitudinal optic (LO) modes. The relative intensity of the MVIF mode is increased as the period of the superlattice becomes short. Raman spectral profiles calculated by use of a linear chain model and a bond polarizability model explain this behavior qualitatively. The quasiconfined LO modes show resonant enhancement for excitations at the band gap energies of ZnTe and CdSe. The effect of atomic diffusion on the interfacial structure has been examined in thermally annealed superlattices by Raman measurement. It is shown that Raman scattering of the interface mode provides information about the interdiffusion of atoms and the sharpness of the heterointerfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 665-666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were prepared by hot wall epitaxy on sapphire (0001) substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x-ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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