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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370106
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  • 2
    Electronic Resource
    Electronic Resource
    Reconnection layers in two-dimensional magnetohydrodynamics and comparison with the one-dimensional Riemann problem (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 3131-3146 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The outflow region of fast magnetic reconnection is studied by using a two-dimensional (2-D) resistive magnetohydrodynamic (MHD) model. The effects of the guide magnetic field By on the 2-D quasi-steady reconnection are investigated. The one-dimensional (1-D) MHD Riemann problem associated with the magnetic reconnection is also simulated for comparison. In the 2-D reconnection a trailing reconnection layer is formed behind a leading bulge. In the cases with By=0, intermediate shocks, slow shocks, slow expansion waves, and a contact discontinuity may be present in the quasi-steady reconnection layer. In general cases with By≠0, the intermediate shocks are replaced by time-dependent intermediate shocks (TDISs). The structure of the reconnection layer as a function of the distance z from the X line in the 2-D reconnection is found to be related to the 1-D simulation results as a function of time t. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873553
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of enhanced Dα high-confinement modes in Alcator C-Mod : The 40th annual meeting of the division of plasma physics of the american physical society (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 1943-1949 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Regimes of high-confinement mode have been studied in the Alcator C-Mod tokamak [Hutchinson et al., Phys. Plasmas 1, 1511 (1994)]. Plasmas with no edge localized modes (ELM-free) have been compared in detail to a new regime, enhanced Dα (EDA). EDA discharges have only slightly lower energy confinement than comparable ELM-free ones, but show markedly reduced impurity confinement. Thus EDA discharges do not accumulate impurities and typically have a lower fraction of radiated power. The edge gradients in EDA seem to be relaxed by a continuous process rather than an intermittent one as is the case for standard ELMy discharges and thus do not present the first wall with large periodic heat loads. This process is probably related to fluctuations seen in the plasma edge. EDA plasmas are more likely at low plasma current (q〉3.7), for moderate plasma shaping, (triangularity ∼0.35–0.55), and for high neutral pressures. As observed in soft x-ray emission, the pedestal width is found to scale with the same parameters that determine the EDA/ELM-free boundary. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873451
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of the high confinement mode pedestal region on Alcator C-Mod : The 39th annual meeting of division of plasma physics of APS (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 1744-1751 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the steep transport barrier at the edge of the Alcator C-Mod tokamak [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] are presented. The parameters at the top of this barrier are in the range Te=150–750 eV and ne=0.5−3.3×1020 m−3, depending on the confinement regime. Type III edge localized modes (ELMs) have an upper temperature limit. Te pedestal profiles show a barrier width ΔT(similar, equals)8 mm. Soft x-ray emissivity profiles are narrower, with Δ=2–4 mm. Edge currents are calculated to alter the ideal stability boundary favorably, leading to ideally stable pedestal profiles. High frequency, broadband, edge density fluctuations are sometimes observed in H-mode (high-confinement mode) and are associated with enhanced particle transport. Coherent magnetic fluctuations localized near the pedestal are also seen. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872843
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation of GaNxAs1−x on GaAs (001) grown by molecular-beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5302-5304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of samples consisting of a strained layer of GaNxAs1−x of different thickness, covered by a GaAs cap layer of 100 nm were grown by molecular-beam epitaxy. The samples have been characterized by high-resolution x-ray diffraction and simulations based on the dynamical theory in order to determine the strain relaxation in GaNxAs1−x layers. It is found that there is a huge difference between the critical thickness determined by x-ray diffraction and the theoretical calculations according to the Matthews and Blakeslee model. The critical thickness of GaNxAs1−x on GaAs is ten times smaller than the theoretical value. The strain relaxation is a crucial point that affects the quality of GaNAs. Photoluminescence measurements are in good agreement with the x-ray diffraction results. The optical properties degraded rapidly when the GaNxAs1−x thickness exceeded the critical thickness determined above. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371516
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  • 6
    Electronic Resource
    Electronic Resource
    Upgrade of reflectometry profile and fluctuation measurements in Alcator C-Mod : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1078-1081 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article reports on the upgrade of the reflectometry profile and fluctuation measurements in Alcator C-Mod. The reflectometer consists of five amplitude modulated O-mode millimeter-wave channels operating between 50 and 110 GHz. The system provides the electron density profile for densities up to 1.5×1020 m−3. An upgrade has been implemented to improve the reliability of the system, eliminate 2π ambiguities in the group delay measurement, and enhance the fluctuation measurements. An upgrade of the 88 GHz channel has been installed, which allows fluctuations on both the upper and lower sideband signals to be measured independently with high resolution. Some preliminary fluctuation and density profile results are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149370
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  • 7
    Electronic Resource
    Electronic Resource
    Division of Labor in Teams (1997)
    Oxford, UK : Blackwell Publishing Ltd.
    Journal of economics & management strategy 6 (1997), S. 0 
    Details
    ISSN: 1530-9134
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: This paper examines the incentive effects of division of labor on worker effort, in the absence of the scale effects studied by Adam Smith. The game-theoretic model gives two results. (1) Suppose workers are identical and risk-neutral, and there is stochastic observation of group output by the firm offering compensations subject to some worker-participation constraint. Then the firm can arrive at the same first-best outcome with or without division of labor. However, if workers are risk-averse, division of labor can give the firm strictly greater profit. (2) A deepening division of labor magnifies this positive incentive effect; but if workers are heterogeneous, or if there are certain informational imperfections in the production process, this incentive advantage of division of labor could be impaired or even reversed. The first result may help explain the emergence of division of labor in the early stages of industrialization without relying on the Smithian advantages, which are also present in some labor deployment schemes without division of labor. The second result throws light on some recent anecdotal evidence of a shallowing division of labor in some areas of modern manufacturing. These factors affecting the efficiency of division of labor are then further discussed in the light of recent empirical findings on division of labor and team work, such as those in Katzenbach and Smith (1993).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1430-9134.1997.00403.x
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of Suspension-Derived, Porous Ion-Conducting Ceramic Membranes (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Porous, oxygen-ion-conducting ceramic membranes can have applications as supports for fuel cells, sensors, and thin membrane films, or as filters for membrane filtration. This paper reports on the preparation of unsupported and supported yttria-stabilized zirconia (YSZ) and yttria-doped bismuth oxide (BY) membranes with submicrometer pore sizes. Fluorite-structured BY powder that has been synthesized using the citrate method and commercial YSZ powder have been used to prepare stable aqueous suspensions. Unsupported and supported YSZ and BY membranes have been prepared from the stable suspensions of YSZ and BY. The supported BY membranes are crack free but contain small defects. Defect-free YSZ membranes that are supported on porous alumina have been prepared under controlled conditions. The average pore size is 100 nm, with a porosity of 57%, for an unsupported YSZ membrane (measured by mercury porosimetry), and 114 nm for a supported membrane (as estimated via helium permeation). The ionic conductivity of the YSZ membranes is 0.00044–0.01 S/cm in the temperature range of 600°–900°C, which is lower than that of dense YSZ disks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb02135.x
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  • 9
    Electronic Resource
    Electronic Resource
    Cu spin reorientation in Tl(BaSr)PrCu2O7 : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6568-6570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cu spins in TlBa2PrCu2O7 order at TN≈370 K with a spin structure that is collinear and is characterized by the {1/21/21} wave vector, where the nearest neighbor spins are aligned antiparallel along all three crystallographic directions. If 50% of the Ba atoms are randomly replaced by the smaller Sr atoms to form Tl(BaSr)PrCu2O7, the TN of the Cu spins reduces to 350 K but the magnetic structure that forms below TN is the same. However, at T≈20 K the Cu spins undergo a change in structure, and the spin arrangement is then characterized by the {1/21/21/2} wave vector below T≈12 K. The ground state spin structure of the Cu ions in Tl(BaSr)PrCu2O7 is hence noncollinear, where the spin directions of the nearest neighbor Cu ions in the ab plane remain collinear and antiparallel while along the c axis they are orthogonal. These results demonstrate that the atoms in the BaO layers are also actively participating in the coupling between the Cu ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361883
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  • 10
    Electronic Resource
    Electronic Resource
    Crystal structure and magnetic ordering of Pr in (Pb0.5Cu0.5)2(Ba0.5Sr0.5)2PrCu2O8 : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4940-4942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure of polycrystalline PbBaSrPrCu3O8 was studied using high resolution neutron diffraction. Rietveld refinement of the diffraction pattern shows that the compound crystallizes into the Tl2Ba2YCu2O8 2212-type structure. The Pb and Cu atoms in the two (Pb,Cu)O layers are randomly mixed to form two (Pb0.5Cu0.5)O layers, and the Ba and Sr atoms are also randomly mixed to form two (Ba0.5Sr0.5)O layers, resulting in (Pb0.5Cu0.5)2(Ba0.5Sr0.5)2PrCu2O8. The magnetic ordering of the Pr ions was also studied using magnetic neutron diffraction and ac susceptibility measurements. At low temperatures, magnetic peaks presumably originating from the Pr spin ordering were observed at the {1/2 1/2 1/2 1/2}, {1/2 1/2 3/2}, and {1/2 1/2 5/2} positions. The Pr spins order at TN(approximate)9 K with the moment direction along the c axis and the nearest-neighbor spins coupled antiferromagnetically. A cusp associated with the antiferromagnetic ordering at TN is also clearly observed in ac susceptibility measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365004
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