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  • 1995-1999  (9)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7647-7661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365343
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  • 2
    Electronic Resource
    Electronic Resource
    Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360416
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  • 3
    Electronic Resource
    Electronic Resource
    Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6039-6041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360542
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  • 4
    Electronic Resource
    Electronic Resource
    Ga2O3 films for electronic and optoelectronic applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 686-693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≈100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359055
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  • 5
    Electronic Resource
    Electronic Resource
    In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum. The Ga2O3–GaAs interface is stable during photoexcitation and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface. The Ga2O3–GaAs interface recombination velocity derived from a modified dead layer model is below 104 cm/s. Furthermore, the PL intensity of Ga2O3–GaAs structures approaches that of a very low interface state density (2×109 eV−1 cm−2) AlGaAs–GaAs reference structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114034
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  • 6
    Electronic Resource
    Electronic Resource
    Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1099-1101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface properties of Ga2O3–GaAs structures fabricated using in situ multiple-chamber molecular beam epitaxy have been investigated. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at (approximately-equal-to)600 °C by electron-beam evaporation using a Gd3Ga5O12 single-crystal source. Metal–insulator–semiconductor structures have been fabricated in order to characterize the Ga2O3–GaAs interface by capacitance–voltage measurements in quasistatic mode and at frequencies between 100 Hz and 1 MHz. The formation of inversion layers in both n and p-type GaAs has been clearly established. Using the quasistatic/high frequency technique, the interface state density has been derived as a function of band gap energy and a midgap interface state density in the mid 1010 cm−2 eV−1 range has been inferred. Charge trapping in the oxide has been revealed as the dominant trapping mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115725
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  • 7
    Electronic Resource
    Electronic Resource
    Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3605-3607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination velocity at oxide–GaAs interfaces fabricated by in situ multiple-chamber molecular beam epitaxy has been investigated. Ga2O3, Al2O3, SiO2, and MgO films have been deposited on clean, atomically ordered n- and p-type (100) GaAs surfaces using molecular beams of Ga–, Al–, Si–, and Mg oxide, respectively. Based on the internal quantum efficiency measured for incident light power densities 1≤P0≤104 W/cm2, the interface recombination velocity S has been inferred using a self-consistent numerical heterostructure device model. While Al2O3–, SiO2–, and MgO–GaAs structures are characterized by an interface recombination velocity which is comparable to that of a bare GaAs surface ((approximately-equal-to) 107 cm/s), S observed at Ga2O3–GaAs interfaces is as low as 4000–5000 cm/s. The excellent Ga2O3–GaAs interface recombination velocity is consistent with the previously reported low interface state density in the mid 1010 cm−2 eV−1 range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116652
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  • 8
    Electronic Resource
    Electronic Resource
    Strain relaxation in Fe3(Al,Si)/GaAs: An x-ray scattering study (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1528-1530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain of epitaxially grown single crystal Fe3(Al,Si)/GaAs films was measured in a synchrotron x-ray scattering experiment. The Fe3Al film (2.5% lattice mismatch) was partially strained and tetragonally distorted at room temperature. As the sample was annealed to 500 °C, the internal strain was mostly relaxed while the tegragonal distortion was greatly reduced. We believe that the strain relaxation was caused by the interdiffusion of atoms through domain boundaries at elevated temperatures. In comparison, the Fe3Si film with much less lattice mismatch (0.17%) was completely strained up to 600 °C without being relaxed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115688
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  • 9
    Electronic Resource
    Electronic Resource
    Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0≤x≤1.0 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x≥14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x≥14%. The results show the important role of Gd2O3 in the (Ga2O3)1−x(Gd2O3)x dielectric films for effective passivation of GaAs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124614
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