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  • 1
    Book
    Book
    Approximation theory : in memory of Arum Kumar Varma; 212 (1998)
    New York u.a. :Dekker,
    Details
    Title: Approximation theory : in memory of Arum Kumar Varma; 212
    Contributer: Govil, Narendra K. , Mohapatra, R. N. , Nashed, Z. , Sharma, A. , Szabados, J.
    Publisher: New York u.a. :Dekker,
    Year of publication: 1998
    Pages: 517 S.
    Series Statement: Pure and applied mathematics 212
    Type of Medium: Book
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  • 2
    Electronic Resource
    Electronic Resource
    Electronmagnetohydrodynamic response of a plasma to an external current pulse (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1484-1494 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we examine the dynamic response of a magnetoplasma to an external time-dependent current source in the context of electronmagnetohydrodynamics (EMHD). A combined analytic and numerical technique is developed to address this problem. The set of cold electron plasma and Maxwell's equations are first solved analytically in the (k,ω) space. Inverse Laplace and three-dimensional complex Fast Fourier Transform techniques are used subsequently to numerically transform the radiation fields and plasma currents from the (k,ω) space to the (r,t) space. The results show that the electron plasma responds to a time-varying current source imposed across the magnetic field by exciting whistler/helicon waves and forming an expanding local current loop, driven by field-aligned plasma currents. The current loop consists of two antiparallel field-aligned current channels concentrated at the ends of the imposed current and a cross-field Hall current region connecting these channels. The characteristics of the current closure region are determined by the background plasma density, the magnetic field, and the time scale of the current source. The results are applied to the ionospheric generation of extremely low-frequency (ELF) and very low-frequency (VLF) radiation using amplitude modulated high-frequency heating. It is found that contrary to previous suggestions the dominant radiating moment of the ELF/VLF ionospheric source is an equivalent horizontal magnetic dipole. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872009
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  • 3
    Electronic Resource
    Electronic Resource
    A simple technique for investigating whispering gallery modes in optical fibers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2868-2870 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple technique for investigating whispering gallery modes in optical fibers is described. Unlike the conventional technique of winding a fiber around a mandrel, a bent fiber is produced simply by inserting it inside a commercial glass tube. The fiber naturally assumes a semicircular shape at the bend. It is shown that the loss spectrum due to whispering gallery modes is insensitive to small variations in the glass tube diameter. The glass tube with the bent fiber inside is used to fabricate a rugged interferometric temperature sensor which can be moved around even during measurements. Application of the technique for quality control is also demonstrated by measuring the variation of fiber buffer properties along the length of fiber. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149026
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6274-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363703
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  • 5
    Electronic Resource
    Electronic Resource
    Synthesis of crystalline carbon nitride thin films by laser processing at a liquid–solid interface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3489-3491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser induced reactive quenching at a liquid–solid interface was used for the synthesis of tetrahedrally coordinated crystalline carbon nitride on a tungsten substrate. The crystalline phase was identified by transmission electron diffraction. X-ray photoelectron spectroscopy indicated that the carbon atoms are coordinated only tetrahedrally with nitrogen—as expected for C3N4. The atomic percentage of N (considering only those atoms coordinated with C) is about 35%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117261
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  • 6
    Electronic Resource
    Electronic Resource
    Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2597-2601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the nature of epitaxy, defects (dislocations, stacking faults, and inversion domains), and heterointerfaces in zinc oxide films grown on (0001) sapphire and explored the possibility of using it as a buffer layer for growing group III nitrides. High quality epitaxial ZnO films were grown on sapphire using pulsed laser deposition in the temperature range 750–800 °C. The epitaxial relationship of the film with respect to (0001) sapphire was found to be (0001)ZnO(parallel)(0001)sap, with in-plane orientation relationship of [011¯0]ZnO(parallel)[1¯21¯0]sap. This in-plane orientation relationship corresponds to a 30° rotation of ZnO basal planes with respect to the sapphire substrate, which is similar to the epitaxial growth characteristics of AlN and GaN on sapphire. The threading dislocations in ZnO were found to have mostly 1/3〈112¯0〉 Burgers vectors. The planar defects (mostly I1 stacking faults) were found to lie in the basal plane with density of about 105 cm−1. We have grown epitaxial AlN films at temperatures around 770 °C using ZnO/sapphire heterostructure as a substrate and observed the formation of a thin reacted layer at the AlN/ZnO interface. The implications of low defect content in ZnO films compared to III–V nitrides and the role of ZnO films as a buffer layer for III–V nitrides are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368440
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  • 7
    Electronic Resource
    Electronic Resource
    Optical emission study of ablation plasma plume in the preparation of diamond-like carbon films by KrF excimer laser (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4154-4159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission study of the laser ablation plasma plume during the preparation of diamond-like carbon (DLC) films using KrF excimer (248 nm) pulsed laser deposition (PLD) has been carried out by means of a monochromator equipped with an intensified optical multichannel analyzer. In high vacuum (1×10−7 Torr), the emission lines from carbon ions of C+, C2+, and C3+ are observed in addition to atomic carbon emission lines, while no emission from the diatomic carbon molecule (C2) is observed. With increasing background nitrogen pressure up to 500 mTorr, the emission intensities of the C2 Swan band and the carbon nitride (CN) violet band increase. The diamond-like character of deposited DLC film degrades with background nitrogen pressure. The vibrational temperature of C2 and CN molecules decreases with the increasing of nitrogen pressure. The CN vibrational temperature for the first 2 μs after the laser pulse is very high and in agreement with the kinetic energy of monatomic carbon ions. The C2 vibrational temperature is as low as 0.6 eV and is consistent with the electron temperature of about 0.8–3.0 eV. It is conjectured that CN molecules are formed directly in reactions involving energetic ionic monatomic carbon, and that the formation of excited C2 molecules is the result of molecular recombinations of C atoms and ions. From the emission intensity measurements and the estimation of the vibrational temperature, it is suggested that the C2 molecule in the ablated plasma plume is not important, but energetic species, such as C+, are very important for producing high quality DLC films using PLD. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371340
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  • 8
    Electronic Resource
    Electronic Resource
    Contrasts between the cardiovascular concomitants of tests of planning and attention (1999)
    Oxford, UK : Blackwell Publishing
    Psychophysiology 36 (1999), S. 0 
    Details
    ISSN: 1469-8986
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Physiological response stereotypy is a well-established psychophysiological construct. Unfortunately, specifying parameters of tasks that evoke differing physiological responses has proved difficult. We have recorded cardiovascular activity while subjects carried out executive and attentional tasks that differed not only psychologically but also in their sensitivity to brain pathology and to pharmacological manipulations. Finapres recordings were made of 30 healthy, normal subjects (mean age 24 years) performing two tasks involving differing aspects of sustained attention and two tasks involving differing aspects of spatial working memory and planning. Measures of heart rate and blood pressure, heart rate and blood pressure variability, and their spectral derivatives revealed differing patterns of cardiovascular adjustment between the “attentional” and “planning” tasks. Each test raised blood pressure, but changes in blood pressure and heart rate variability were confined to the attentional tasks. These findings suggest distinct brain mechanisms subserving different forms of arousal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1469-8986.3650610
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  • 9
    Electronic Resource
    Electronic Resource
    Manganese doped zinc sulphide nanoparticles by aqueous method (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2506-2508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc sulphide nanoparticles in the size range ∼10–40 A(ring) diameter have been synthesized using the aqueous chemical method. Scanning tunneling microscopy showed that particles are indeed nanosize particles. The size dependent band gap could be varied from a bulk value of 3.68 to 4.5 eV. X-ray diffraction indicated that nanoparticles are crystalline except for those with band gap ∼4.5±0.1 eV. Nanoparticles with particle size ∼21×2 A(ring) diameter or energy gap 4.1×0.1 eV were doped with manganese. The photoluminescence peak at ∼600 nm corresponding to yellow light emission was observed. Atomic absorption studies show that maximum luminescence intensity is achievable with 0.12 at. wt % of Mn doping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114440
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic force microscopy of selenium sulfide passivated GaAs (100) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 415-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118079
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