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  • 1
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have applied the laser-pump/probe and double-beam absorption/dispersion approaches to the far wings of the Hg 3P1–1S0 resonance line broadened by collisions with H2, D2, and HD. Absolute reduced absorption coefficients of the Hg–D2 quasimolecules have been determined as a function of the wave-number shift Δ from the resonance-line center both in the red and blue wings. The nascent rotational distributions have been determined for the v=0 and 1 levels of HgH (X 2Σ+) and the v=0 level of HgD (X 2Σ+) formed from the Hg*(3P1)–H2, D2, and HD collisional–quasimolecular states A˜ and B˜ attained by the red- and blue-wing excitation, respectively. Both of the intermediate states A˜ and B˜ give quite similar rotational distributions peaking around N(approximately-equal-to)18 for HgH and N(approximately-equal-to)25 for HgD insensitive to the excitation-wave-number shift Δ. However, a small difference is found: the red-wing excitation gives larger populations in the low-N levels than the blue-wing one. The departing atom isotope effect is observed in these low-N populations of HgD from Hg–D2 and Hg–HD. The absolute ratio of the nascent yields of v=1 to 0 has been measured to be 0.3, being nearly constant against Δ in both the red and blue wings. These observations indicate that HgH is formed predominantly from a bent H–Hg–H configuration on both the pathways via the A˜ and B˜ states. The different type of transition state, however, may be encountered on the pathways producing the minor components in the low-N levels. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1822-1828 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A gold neutral beam is perpendicularly injected into a plasma column along a main chord near an inner mirror throat of a plug/barrier cell in the tandem mirror GAMMA 10, in order to directly measure time evolution of the electrostatic radial potential profile during one shot. The new method pays attention to the fact that trajectories of the ions, which are ionized at each point on the path of the neutral beam in the plasma column, are shifted due to the magnetic field gradient and the electrostatic potential. After traveling about a half period of Larmor motion, ions are detected by a plate type of ion detector. The radial profiles of the plasma potential are determined analyzing positions of the ion beam spots on the detector plane. The main advantage of this method is that radial potential profiles in a strong magnetic field region can be measured as a function of time during one shot without sweeping incident beam angles. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electronic amplification gain of a microchannel plate (MCP), as employed for detector and image amplifier of an x-ray pinhole camera, tends to decrease as the output current increases, posing problems both in quantitative analyses and in construction of a three-dimensional emissivity distribution. We report that the output-current dependent MCP gain is described in a simple empirical formula that is determined by an in situ calibration experiment using a steady-state low-temperature discharge plasma. We examine the validity of the formula affirmatively in correcting raw data of x-ray images of magnetically trapped hot plasma. It is also demonstrated that the correction leads to a three-dimensional distribution of soft x-ray emissivity in a quadrupole-mirror-trapped hot plasma that is consistent with other indirect measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5995-5997 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe films were deposited by sputtering with ion beam perpendicular to the target. The substrates were arranged to be in the arc shaped position around the center of the ion bombarded area of the target. The sputtering voltage Vs was 1200 V. The angle θs between the direction of the ion beam and the normal line of the substrate plane was varied in the range of 10°–80°. The energy of the sputtered atoms arriving to the substrate was calculated by Monte Carlo simulation, and the average energy EFe of the sputtered Fe atoms varied drastically with θs. EFe increased with increase of θs. The morphology and the magnetic properties of the Fe films significantly depended on θs. The morphology changed from a columnar structure to a round-grain one by propagation of recrystallization with the increase of θs. The saturation magnetization 4πMs was about 21.5 kG. The coercivity Hc took the minimum value of 5 Oe for θs above 50°. This suggests that the angular relation between the target and the substrate should be one of essential factors for controlling the magnetic properties of the Fe films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact pinhole camera is found to be useful for observation of a spatial distribution of hot ions by imaging energetic charge-exchange neutral atoms. One can obtain images of neutral atoms and of x rays in the same geometry only by selecting filtering foils at the pinhole opening of a single camera. Easy comparison between the images associated with distributions of ions and electrons is quite beneficial for physical analyses of plasmas. The imaging technique is expected also to be useful to determine space–time-resolved energy spectra of hot ions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2422-2427 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In conventional infrared (IR) thermographic cameras it is normally assumed that the ambient temperatures of optical objects are the same as the temperature determined at the camera head. In increasing cases of application of thermography, this assumption is not always satisfied, and often leads to erroneous results. In this article, we propose a determination scheme of the true temperature of such objects in an explicit form of equation to be solved by combining the readout temperature of the camera with a response function of the camera to a blackbody. The equation can be used to determine optical properties of components in an IR system. It also works to evaluate the contribution coming from each element along the optical path. Though the scheme is written in a form applicable to a specific camera among commercial products, it can be modified so that conventional IR cameras are conveniently used for thermographic determination of the temperature of gray objects in exotic environments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 352-354 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Negative bias is applied to a mesh placed in front of an endplate of the GAMMA 10 tandem mirror [Phys. Rev. Lett. 55, 939 (1985)]. A bias voltage of around 10 V results in an increase of the potential difference by an order of kV in the end region. The increment is about two times the temperature of end-loss electrons and most of that stems from the sheath potential drop in front of the endplate. Provided that almost all the secondary electrons emitted from endplate are reflected, these results agree with the prediction of a potential model for the open magnetic field configuration [J. Phys Soc. Jpn. 61, 3153 (1992)]. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6667-6669 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe films have been deposited by ion beam sputtering using Ar, Kr, and Xe gases. The sputtering voltage VS was varied in the range of 900–1800 V. The magnetic properties of the films had the significant relationship with the element of the sputtering gas. The saturation magnetization 4πMS was 21 kG for Ar and 20 kG for Kr or Xe. The coercivity HC took the minimum value of 5 Oe at VS of 1200 V for Ar. The energy/the number of the energetic particles, such as the sputtered atoms and the recoiled ions bombarding to the substrate was calculated by Monte-Carlo simulation in the sputtering system with an amorphous Fe target. The average energy of the sputtered atoms ES was 40–60 eV for Ar, 30–34 eV for Kr and 24–34 eV for Xe. The average energy of the recoiled ions ER was 200–370 eV for Ar, 60–100 eV for Kr, and 25–50 eV for Xe. The energy was remarkably different among their sputtering gases with different atomic mass. The bombardment by the recoiled ions at the high energy reduced the coercivity HC of the Fe films. © 1998 American Institute of Physics.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FexSey films were prepared on GaAs(001) substrates by a selenization of Fe films using molecular beam epitaxy equipment. Structural and magnetic properties of FexSey thin films during their selenization process were studied. The selenized films obtained consisted of polycrystalline grains of 100–700 nm. A magnetic anisotropy of in-plane/perpendicular to the films was weakened by increasing the selenization ratio of the samples, which was interesting in contrast to the fact that the grain size of the films became larger. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 510-512 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed atomic force microscopy in contact mode while applying an ac bias voltage between a conductive tip and a sample to characterize near surface band structures of InAs-covered n-type (001) GaAs, where self-assembled dot structures were formed. Electrostatic force of less than 10 pN was detectable, and clear electrostatic force images and topographic images were simultaneously obtained with lateral resolution higher than 20 nm. The electrostatic force images from single and double frequency components reveal that the gap width between the tip and the conductive region under the dot-covered area of the sample is smaller and is less modulated by the bias voltage than under the wetting layer. The results indicate that surface depletion is more suppressed beneath the dots. © 1999 American Institute of Physics.
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