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  • 1
    Electronic Resource
    Electronic Resource
    Ordering of Tl and Bi in Bi-doped Tl-1223 high Tc superconductors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 326-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc superconducting materials with nominal compositions of Tl1-xBix(Sr, Ba)2Ca2Cu3O9 (0≤x≤0.5) have been investigated using x-ray powder diffractometry and electron microscopy. It was found that Tl and Bi cations were in an ordered arrangement in the (Tl, Bi)–O atomic layer. Although the proposed supercell is 4a×4b×4c derived from the basic unit cell of the undoped TlBa2Ca2Cu3O9 (Tl-1223), the basic two-dimensional superlattice in the (Tl, Bi)–O layer is 2a×4b or 4a×2b with Bi cations at the center and the corner of the rectangle, giving an ideal and preferred composition with the Tl:Bi ratio of 3:1. Accordingly, the maximum Bi doping for Tl in the solid solution is 25%. The proposed model of the superstructure was supported by computer simulation of electron diffraction patterns. The mechanism of formation of the superstructure is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362823
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance study of H2S plasma-passivated GaAs surface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance is used to study the effect of H2S plasma passivation on the GaAs surface. GaAs samples are treated with a H2S plasma in an electron cyclotron resonance chemical vapor deposition system and in-situ encapsulated with a SiNx film. The surface Fermi level moves towards the conduction band after H2S plasma passivation and a surface state density of 6×1010 cm−2 is achieved under optimal passivation conditions. The surface state density is highly dependent on the sample temperature during passivation. The movement of the surface Fermi level is due to the reduction of the surface state density and not due to a shift of midgap surface states, suggesting that S–Ga bonds play the major role in H2S plasma passivated GaAs surfaces. This work demonstrates the need to measure both the surface Fermi level and the density of surface states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123572
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3297-3299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121629
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  • 4
    Electronic Resource
    Electronic Resource
    Bias independent heavy- and light-hole degeneracy in InGaAs/InGaAsP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a type of strained semiconductor quantum-well structure that exhibits bias-independent heavy- and light-hole degeneracy. This effect is achieved by inserting thin layers of highly strained material in an unstrained quantum well. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect for the heavy and light holes can be engineered separately to control the bias dependent polarization properties. Experimental results on such a structure agree well with the theory. These unique bias-dependent polarization properties have important applications in optoelectronic devices when specific polarization properties are required. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120845
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  • 5
    Electronic Resource
    Electronic Resource
    A novel approach for doping impurity in thin film in situ by dual-beam pulsed-laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3659-3661 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows in situ controlling doping under a wide range of conditions. We demonstrated doping Ag in situ in YBa2Cu3O7−δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149168
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  • 6
    Electronic Resource
    Electronic Resource
    Intracavity frequency doubling of a continuous wave Ti:sapphire laser with over 70% conversion efficiency (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient tunable ultraviolet generation by intracavity frequency doubling of a continuous wave Ti:sapphire laser was demonstrated. Maximum output is obtained of 460 mW at 398 nm corresponding to a total infrared-to-ultraviolet conversion efficiency over 70%. High conversion efficiency was resulted from a critically phase-matched, temperature-tuned lithium triborate crystal and a novel resonator design. The observed laser damage of the crystal coatings is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113996
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  • 7
    Electronic Resource
    Electronic Resource
    Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1654-1656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized In0.4Ga0.6As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light–current characteristics of 3 μm single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6 GHz and linewidth 〈10 MHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123644
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  • 8
    Electronic Resource
    Electronic Resource
    Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 135-137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the wet thermal oxidation of In0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers (VCSELs). Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of In0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121443
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  • 9
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance effect in bulk La1/3Nd1/3Ca1/3MnO3 at low field (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 424-426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magnetoresistance ratio as high as −96% in a low field of 0.67 T is achieved in bulk La1/3Nd1/3Ca1/3MnO3. The magnetization exhibits a transition from a low moment state to a high moment state with decreasing temperature, accompanied by a thermal hysteresis of the magnetization. The magnetic transition might be an order-order transition and would be responsible for the observed giant magnetoresistance effect in the compound at low field. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118082
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  • 10
    Electronic Resource
    Electronic Resource
    Tensile tests of ropes of very long aligned multiwall carbon nanotubes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3152-3154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the Young's modulus and tensile strength of multiwall carbon nanotubes by pulling very long (∼2 mm) aligned nanotube ropes with a specially designed stress-strain puller. This puller can apply an axial force to the rope and simultaneously measure the corresponding rope elongation and the change in rope resistance. The average Young's modulus and tensile strength obtained were 0.45±0.23 TPa and 1.72±0.64 GPa, respectively, which are lower than those calculated and measured previously. The factors that affect the mechanical strengths of nanotubes are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124094
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