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  • 1990-1994  (21)
  • 1985-1989  (17)
  • 1935-1939  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Light detection using high-Tc microstrip transmission lines as a probe of film homogeneity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4995-4999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of light on high-temperature superconductor microstrip transmission lines under conditions for which a bolometric photoresponse is expected. We illustrate the pitfall of comparing a spatially local property (such as microwave detected photoresponse) and a global property (such as microwave transmission), and then drawing conclusions regarding the bolometric character of the photoresponse. For low microwave powers, the photoresponse, measured as function of the position of the spot illuminated, provides a measurement of the spatial inhomogeneity of the microwave properties of the film. For microwave powers large enough to depress the critical temperature, such measurements provide information about standing waves in the microstrip.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349002
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Proton radiation effects in microwave cavities and ring resonators fabricated from YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first radiation effects study on a superconducting ring resonator made from thin-film YBa2Cu3O7−δ. Exposure to 2 MeV protons causes the superconducting transition temperature Tc to decrease predictably with fluence. For temperatures below about 0.9Tc , there is no significant change in the transmission coefficient, the center frequency, or the quality factor Q of the resonator, even for doses in excess of 4×1016 protons/cm2 (∼0.04 displacements per film atom). Similarly, the low-temperature surface resistance Rs of an unpatterned film does not change with irradiation. We show that this insensitivity to radiation is not predicted by standard theory, and that the dominant part of Rs at low temperature is the residual resistance R0. Thus any viable theory describing the origin of R0 must, as a criterion, explain the origin of its insensitivity to large irradiation doses. This criterion is used to evaluate theories ascribing R0 to weak links, flux pinning, impurities, and lattice imperfections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105178
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Microwave surface resistance of bulk Tl-Ba-Ca-Cu-O superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 389-390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first measurements of the microwave surface resistance at 18 GHz of bulk Tl-Ba-Ca-Cu-O superconductors produced by the hot isostatic pressing (HIP) process are reported. The superconducting samples, prepared by solid-state reaction with subsequent sintering and consolidation to obtain ideal density, were measured by replacing the end wall of a TE011 circular mode gold-plated copper cavity with the sample and determining the cavity Q for the temperature range 4–300 K. Results indicated that HIP samples which underwent subsequent annealing exhibit, below the critical temperature, a surface resistance approaching an order of magnitude less than copper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100972
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic properties of symmetric and asymmetric quantum-well electron barrier diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 706-710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum-well electron barrier diode is a device whose current-voltage characteristic originates in the symmetry of the ground-state energies present in a sequence of quantum wells. In this paper, current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the quantum-well electron barrier diode are presented for a number of symmetric and asymmetric configurations fabricated from samples grown by molecular-beam epitaxy. The data demonstrate that the symmetry of the quantum wells determines the symmetry of the I-V characteristic. The effect of doping on the C-V characteristic is also examined. It is shown how the effect of doping can be understood via a solution of Poisson's equation at zero bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339746
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Minimization of the noise temperature of the free-electron bolometer mixer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1715-1718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principal factors which limit the bandwidth and noise temperature of the free-electron bolometer mixer have been calculated. The minimum mixer contribution to the effective noise temperature is found to be 33Tlattice under the conditions of rf match, IF match, and constant current bias. This result is independent of the electron-lattice energy relaxation time, and can be achieved without significantly degrading the information bandwidth. The best experimental values from the literature are found to be near this predicted performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336018
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  • 6
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of double-sided YBa2Cu3O7 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBa2Cu3O7−δ were deposited on both sides of (100) LaAlO3 substrates by metalorganic chemical vapor deposition. Using a gold-coated wafer carrier, improvements in both the transition temperature and critical current density of the film exposed to the carrier (first side) were demonstrated. Tc's of 86–88 K and Jc's≥106 A/cm2 at 77 K were achieved. The microwave surface resistance of both sides of double-sided samples measured at 77 K was approximately 8 mΩ at 36 GHz, scaling to less than 700 μΩ at 10 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109575
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7 on (100) LaAlO3 and (100) SrTiO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2926-2928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBa2Cu3O7−δ on (100) LaAlO3 and (100) SrTiO3, up to 5000 A(ring) thick, were grown by metalorganic chemical vapor deposition. The as-deposited films were c-axis oriented, and had transition temperatures between 87 and 89 K, transition widths less than or equal to 1 K, and critical current densities of 1–3×106 A/cm2 at 77 K. Microwave surface resistance measurements at 36 GHz on (100) LaAlO3 showed significant improvements over copper metal at 77 K. Films grown on (100) SrTiO3 exhibited slightly better properties than those grown on (100) LaAlO3. Films which were slightly deficient in barium and rich in yttrium consistently demonstrated superior properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106822
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal Calorimeters in Particle Physics (1994)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Nuclear and Particle Science 44 (1994), S. 453-500 
    Details
    ISSN: 0163-8998
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ns.44.120194.002321
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  • 9
    Electronic Resource
    Electronic Resource
    The properties of Y1Ba2Cu3O7−δ thin films with silver doping prepared by spray pyrolysis (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6946-6952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting, silver-doped films of Y1Ba2Cu3O7−δ have been deposited by spray pyrolysis of aqueous nitrate solutions onto MgO substrates. The superconducting transport properties, microstructure, and microwave losses have been characterized for various amounts of AgNO3 added to the spraying solution. These films had resistive transition temperatures between 79 and 85 K with widths from 3 to 7 K. The room-temperature resistivity was a strong function of the silver doping, dropping by a factor of 50 for the heavily doped films. Critical current densities at 4 K were typically several 103 A/cm2 with little correlation to the silver doping. Lattice constants also were not significantly affected by the silver doping level, however, lightly doped films were denser, had the strongest c axis preferred orientation, and a smoother surface. Rf surface resistance was measured at 18 GHz, and for the best films dropped a factor of 10 below copper by 40 K. The London penetration depth was estimated to be approximately 1 μm for the best films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345038
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    The plasma cell at the advancing front of the lesion in chronic periodontitis (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 25 (1990), S. 0 
    Details
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: This study analyses the infrastructure of the plasma cell population of periodontitis-affected soft tissue close to the advancing front of interdental lesions. Biopsies from 20 patients and 3 control volunteers were examined: 5 with treated adult periodontitis (AP), 5 with untreated AP, 5 with treated juvenile or postjuvenile periodontitis (JP) and 5 with untreated JP. Plasma cell (PC) counts increased significantly (p 〈 0.05) with lesion severity. They were absent from epithelium and sparse in the clinically healthy control specimens. Degenerate PC tended to be more numerous within JP tissue but differences were not significant (p 〉 0.05) when compared to AP. Intact plasma cells were never seen within JP superficial connective tissue. Russell bodies were small and few in number. The presence of degenerated plasma cells indicated normal formation and release of immunoglobulins within the tissues of AP and JP. Increased counts of degenerate PC and tissue destruction in JP suggested a correlation, possibly attributable to anti-collagen antibody secretion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0765.1990.tb01206.x
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