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  • 1
    Electronic Resource
    Electronic Resource
    Effect of microstructure of YBa2Cu3Ox films on power handling capability studied with microstrip resonators (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4256-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave properties of two types of YBa2Cu3 Ox (YBCO) films with different microstructure have been studied at 4.2 K and 6 GHz. One type of film was grown at a constant substrate temperature of 705 °C during the film growth (constant-growth films). The other type of film ws prepared with two-stage process: initial growth at a lower temperature of 630 °C and subsequent higher-temperature deposition at 705 °C (two-stage-growth films). Although both types of film have very similar intrinsic YBCO material properties such as c-axis lattice constant, Tc, and unloaded quality factor Qu at low power levels, quite different microwave properties are observed at high power levels. The two-stage-growth films with small grains less than 100 nm show fairly small power dependence of Qu and resonance frequency on input power up to +10 dBm. On the other hand, the constant-growth films with large grains (∼200 nm) show significant changes in these properties, accompanied by an appearance of asymmetric resonance curves. These results show that the power handling capability of granular YBCO films is mainly affected by the extrinsic film microstructure and that the quality of the grain boundaries causes the difference in power dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357309
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of shielded microstrip line resonators made from double-sided Y1Ba2Cu3Ox films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4440-4442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-sided Y1Ba2Cu3Ox films are prepared on MgO(100) substrates for KrF excimer laser deposition and their electrical properties, both direct current and microwave frequencies, are examined. Double-sided Y1Ba2Cu3Ox films show zero resistivity at temperatures higher than 88 K and ρ(300K)/ρ(100 K) higher than 2.7. Using a niobium shield, a double-sided Y1Ba2Cu3Ox films microstrip line resonator at 5.7 GHz shows an unloaded Q value of 2.6×104 at 77 K and 1.1×105 at 4.2 K. These are the highest class of unloaded Q known to be reported for planar-type resonators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357342
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth study of Bi2(Sr,Ca)3Cu2Ox films on cleaved MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104381
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103302
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  • 5
    Electronic Resource
    Electronic Resource
    Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7−x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100499
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was also epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl2O4/Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO3/MgAl2O4/Si and at 70 K on BaTiO3/MgAl2O4/Si were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100488
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  • 8
    Electronic Resource
    Electronic Resource
    Composition dependence of superconducting properties in Bi2(Sr1−xCax)n+1CunOy (n=2, 3) thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1213-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr1−xCax)n+1CunOy (n=2, 3) system were prepared on (100)MgO substrates by coevaporation of Bi2O3, Sr-Ca alloy, and Cu metal. The lattice constant of the c axis of the low Tc (∼85 K) phase (n=2) decreased with increasing Ca composition x. The superconducting transition temperatures of both the low Tc phase and high Tc (∼110 K) phase (n=3) decreased with increasing x. These tendencies indicated that both the low Tc phase and the high Tc phase have a mutual solubility between Ca and Sr atoms in this Bi system and that the Tc 's of these two phases are related to the c-axis lattice constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100668
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  • 9
    Electronic Resource
    Electronic Resource
    As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101574
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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