ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the quantized conductance of a one-dimensional ballistic channel in the two-dimensional electron gas of a back-gated GaAs/AlGaAs heterostructure. A standard Schottky split-gate fabricated with electron-beam lithography techniques is used to define the one-dimensional channel, but we incorporate an epitaxially grown in situ back-gate, situated ∼1 μm below the electron gas, to provide additional control of the carrier density. Quantized conductance steps can be induced by changing the bias on either gate, highlighting the self-consistent nature of the electrostatics involved. We show that we can, in principle, achieve independent control of the one-dimensional carrier density and channel width.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106849
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