Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8060-8065 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, infrared transmission, Raman scattering, and photoluminescence measurements in terms of various annealing temperatures. Low - temperature photoluminescence spectra have also been observed. This leads us to conclude that not only the siloxene derivatives but also the quantum size effect gives the luminescence in porous silicon. The previous pseudopotential calculations are used for the explanation of our experimental results.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 855-857 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscopic structures of light emitting porous silicon layers have been studied. The samples prepared in an aqueous HF solution by anodizing p-type silicon substrates show a strong positional dependence of photoluminescence and Raman spectra. The photoluminescence peaks are broad around 1.8 eV, where the photoluminescence intensities are comparable to that of GaAs at 5 K. We have found from Raman studies showing two characteristic peaks at 500 and 520 cm−1 that microscopic structures reveal gradual changes from porous silicon to a mixture of polycrystalline and hydrogenated amorphous phases as the probing spot is moved to the edge of the sample. This is explained by the redeposition of silicon atoms on top of the porous silicon layers near the edge of the sample as a result of liquid flow caused by bubbles of hydrogen gas which was produced near the surface of the sample during the anodization process.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1812-1814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon layers prepared by anodic dissolutions of silicon wafers in aqueous HF solutions reveal either crystalline phase or intermediate phase between microcrystalline and amorphous phases, depending on the anodization conditions. The configurations of hydrogen and oxygen atoms near the surface of microstructures are directly related to the light emitting characteristics of porous silicon layers. We observed that oxidation leads to the shifts of SiHn stretching modes to higher frequencies and enhanced photoluminescence intensity, which can be correlated with a charge transfer within O—Si—H bonds. We also observed that chemical treatments in trichloroethylene have similar effects as thermal oxidation.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 7340-7342 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 400-406 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical points of (AlxGa1−x)0.5In0.5P semiconductor alloys grown by metal-organic chemical vapor deposition and lattice matched to GaAs have been measured at room temperature in the 1.5–6.2 eV spectral region using spectroscopic ellipsometry. We have performed standard lineshape analysis of the second derivatives of pseudodielectric function data to obtain the standard critical point parameters (peak position, broadening parameter, amplitude, and excitonic phase angle) as a function of x. The properties of the E1 and the E1+Δ1 spectral structures have been observed for the first time. The anomalously small amplitude of the contribution of E1+Δ1 spectral feature relative to that of E1 is attributed to the k-linear interaction between the Λ4,5v and Λ6v valence bands, which is large in III-P alloys due to the very small spin-orbit splitting. The bowing parameter of Δ1 is determined and discussed. The critical point parameters smoothly interpolate between those of the two ternary endpoints, Ga0.5In0.5P and Al0.5In0.5P. These parameters are discussed and compared with those of AlxGa1−xAs, (AlxGa1−x)0.5In0.5As/InP, and InxGa1−xAsyP1−y /InP.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2764-2767 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of temperature and atmosphere on stability of the high-Tc phase in Bi1.8Pb0.4Sr2Ca2Cu3Ox superconductors has been investigated using ac susceptibility, x-ray diffraction, and Raman measurements. It is found that the high-Tc phase becomes unstable due to the structural phase transformation at temperature above 650 °C in O2 of 1 atm. The formation and the decomposition of the high-Tc phase is found to occur through the medium of the Ca2PbOx phase and depends on oxygen partial pressure at temperature above 650 °C.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of nonalloyed epitaxial Au-Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0.28 Ω mm and ∼7×10−6 Ω cm2, respectively. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by secondary ion mass spectroscopy (SIMS) imaging and Auger depth profiling. Back side SIMS profiles indicate deep Ge and Au diffusion into the GaAs substrate in the island regions. Ohmic contact behavior was found to depend upon both the kinetics of the reactions (localized reactions and island growth) and the thermodynamics (substantial diffusion of both Au and Ge) of the system. A model describing the coupled Au and Ge in-diffusion with respect to the GaAs substrate is presented.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4208-4211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multi-shot evolution of laser-induced periodic structure was studied by the time-resolved optical diffraction and reflection from the surface of polycrystalline silicon-on-insulator during the accumulation of 20 ns ruby laser pulses. In contrast to the results previously reported for the bulk sample, it was observed that the channel of the periodic structure development changed during the multiple irradiations even with a fixed fluence. The observed change occurs because the energy absorption is enhanced by the presence of the periodic structure preformed by the preceding pulses, and the absorbed laser energy at the polycrystalline layer is insulated by the underlying SiO2 layer. A previously unappreciated dip structure was observed in the time-resolved diffraction and a possible explanation is suggested postulating the preferential energy deposition in the valleys of the periodic structure.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5424-5424 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic film laminations containing nonmagnetic spacers have been explored with the hope of eliminating domain walls to diminish Barkhausen instabilities. Such laminates have limitations however, which originate in their "edge-curling walls'' (ECWs).1 We have developed a new structure, free of ECWs, in which flux closure at opposing edges occurs via edge-shorting material added to circulate the easy-axis flux of the flat layers. We show experimentally with Kerr-effect imaging that (1) this edge-closed laminated (ECL) structure can support an (ECW-free) "easy-axis'' (EA) magnetic state under conditions as modeled recently by Slonczewski,2 and (2) that this EA state is quite robust in the face of imperfect structure fabrication. This is, if the imperfections are not too severe, the resultant states depart minimally from the pure EA state and conduct hard-axis-driven flux nearly as well. Flat-film ECL elements in diamond, stripe, and recording-head-yoke shapes, plus experimental heads with ECL top yokes, were fabricated. Our domain images verify some key predictions from Slonczewski's static equilibrium modeling; additional results taken in applied magnetic fields extend the micromagnetic understanding. The sketch shows a typical domain pattem for a yoke-shaped element. The most stable state in the open portion of the yoke is the single domain shown. This remanent pattern was stable in the face of (slowly varying) external fields up to the 150 Oe that could be applied. The pole tip region contained a few 180° walls as indicated. On close inspection, these walls were seen to end in vestigial, nontouching, closure domains as predicted by the model when only partial flux closure occurs via the edge shorting material. The wall spacing in the tip varied somewhat following saturation–demagnetization cycles. The dynamic stability of this EA state was investigated in the experimental heads having ECL top yokes. The pseudodynamic LAMOM technique3 was applied using "write'' pulsations. The EA state was stable up to twice typical write currents. A movie of dynamic results will be shown.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 752-756 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...