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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7−δ (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O2 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760–800 °C for 3–10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2×104 A/cm2 (77 K, B=0). The films had a thickness of 200–700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65–130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7161-7163 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical responses and crystallinity of YBa2Cu3O7−δ films were measured as a function of excimer laser exposure (308 nm) and laser fluences ranging from 20 to 150 mJ/cm2. Tc and Jc were measured with an inductive technique and with standard dc transport measurements. The crystallinity of the films, as determined by Rutherford backscattering spectrometry, scanning electron microscopy, and x-ray diffraction, was altered by the formation of a degraded surface layer, even at fluences well below the melting threshold. The critical current of a film can be modified with a high degree of accuracy and can be correlated with a boundary layer in the film. This allows for the critical current to be decreased over three orders of magnitude with a resolution of 255 A/cm2 per laser shot.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2090-2096 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: All 13 elastic constants of a vapor grown, uncut, anthracene single crystal were determined from acoustic phonon velocities obtained by the Brillouin scattering method. The phonon velocities are plotted for three crystallographic planes containing the crystal axis. The relationships between phonon velocities and lattice dynamics are discussed. A minimizing procedure is introduced for converting phonon velocities of low symmetry systems into elasticity coefficients. This is shown to have several advantages over previous methods used. The results are compared with those obtained by previous studies of anthracene elastic constants.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 3624-3630 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The molecular crystal 1,2,4,5-tetrabromobenzene (TBB) has been studied using Brillouin scattering and lattice dynamical calculations. A method for mapping acoustic mode anharmonicity is developed that exhibits substantial directional behavior and correlates well with the directions of the molecular movements associated with the phase transition. It is shown that by comparing the calculated sound velocities with the experimental values, insight can be gained into the displacive phase transition and the lattice dynamics of TBB. The sound velocities are plotted for three crystallographic planes containing the crystal axes. The relationships between sound velocities and lattice dynamics are discussed. The phonon dispersion curves for three directions are also presented.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities (Jc) in YBa2Cu3O7−x films made at deposition rates from 0.1 to 14.5 nm/s (∼50 μm/h) were measured using a direct transport method. As the deposition rate was increased by two orders of magnitude, the films exhibited no marked degradation in current carrying capability with Jc of ∼4×106 A/cm2 at 77 K and zero field. Jc for all the films showed similar behavior under a magnetic field up to 8 T, although extra structural defects were found in the films deposited at the higher rates. The results from this experiment indicate the feasibility for coating wires, tapes, and other macroscopic shapes with high Tc superconductors using proper vapor deposition techniques.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2165-2167 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared epitaxial (100)CeO2 thin films on LaAlO3, sapphire, and yttria-stabilized zirconia using pulsed laser deposition. It is demonstrated in this letter that the CeO2 films are chemically and structurally compatible to the high-temperature superconductor YBa2Cu3O7−δ (YBCO). Epitaxial YBCO films on CeO2/LaAlO3 had a zero resistance temperature and critical current density in a zero field of 90 K and 5.9×106 A/cm2 at 75 K, respectively. Furthermore, epitaxial multilayers of CeO2/YBCO were prepared. This work demonstrated that CeO2 is an excellent buffer layer material for the high-temperature superconductors.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1481-1483 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of YBa2Cu3O7−δ on (100) SrTiO3 are prepared in situ by a pulsed laser deposition technique at deposition rates from 1 to 145 A(ring)/s. Crystallinity of the films is examined by Rutherford backscattering in the channeling mode using a 2.2 MeV He+ ion beam. The backscattering minimum yield (χmin) increases with the deposition rate. A χmin of 3% is observed in the films deposited at the lowest deposition rate. Even at a deposition rate of 145 A(ring)/s, the films show good crystallinity with χmin of 15%, indicating epitaxial growth. The x-ray diffraction measurements show that the films have strong c-axis orientation normal to the substrates. The films have metallic resistance versus temperature behavior with zero resistance temperatures of 90 K. The results indicate that the pulsed laser deposition technique could be used to deposit large-area films efficiently with adequate substrate movement.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1149-1152 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel process for the direct laser writing of thin-film high Tc patterns is demonstrated. The process consists of deposition of a high quality film (308 nm laser ablation from a YBa2Cu3Ox target with a 750 °C substrate temperature and a 150 mTorr O2 ambient), annealing in an inert atmosphere (Ar at 400 °C for 5–20 min) to reduce the oxygen content and depress or eliminate the superconducting transition temperature, and direct-write laser heating (1.06 μm at ≈0.5 kW/cm2 for ≈5 min) in an oxygen atmosphere at ≈590 Torr to selectively regenerate the high Tc material. rf eddy current and four-point resistivity probe results confirm this process for both SrTiO3 and LaAlO3 substrates. Scanning electron micrographs indicate that this is a very mild processing sequence with no observable changes in film morphology.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2610-2613 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An improved method for light scattering from acoustic phonons in small, low-symmetry solids is described. This instrumentation greatly facilitates the determination of elastic constants in highly anisotropic materials. Elastic scattering can be greatly reduced so that weaker phonon modes can be observed. Errors associated with the determination of the polarization directions of an anisotropic material are minimized by considering crystal optics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technologically useful chemical vapor deposition process with high growth rate ((approximately-greater-than)4 μm/h) was developed for the epitaxial growth of YBa2Cu3O7−x (YBCO) thin films. Even at the high growth rate used in this process, a spiral growth mechanism was observed and the films grown had electrical (Tc=92 K, Jc of 2×106A/cm2 at 77 K) and structural properties equal to films produced by physical vapor deposition.
    Type of Medium: Electronic Resource
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