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  • 1
    Electronic Resource
    Electronic Resource
    Calibration of Sm:YAG as an alternate high-pressure scale (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5357-5359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure-induced wavelength shift of a laser-excited fluorescence in samarium-doped yttrium aluminum garnet (Sm:YAG) was compared with that of ruby to 26 GPa at room temperature. Because the fluorescence wavelength for Sm:YAG has a negligible temperature dependence, it provides a better pressure scale for diamond anvil cell applications than ruby under high-temperature conditions. However, the overall intensity of the Sm:YAG fluorescence is less than that for ruby. A Gaussian–Lorentzian profile was chosen to analyze the fluorescence spectra. The Sm:YAG fluorescence wavelength exhibits an approximately linear pressure dependence (3.07±0.45 A(ring)/GPa) only to 20 GPa at room temperature. A polynomial fit for all data to 26 GPa gives P(GPa)=−10 280(λ/λ0−1)2 +2085(λ/λ0−1), with a rms misfit of 0.14 GPa.〈squeeze〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347031
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  • 2
    Electronic Resource
    Electronic Resource
    Vibrational analysis of the 460 nm band system of nickel dichloride produced in a free jet expansion (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 6365-6375 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a free-jet expansion which incorporates a heated nozzle, we have recorded the laser excitation spectrum of the 460 nm band system of NiCl2 at a rotational temperature of ∼40 K. 35Cl/37Cl isotope shifts were resolved which permit the assignment of progressions involving the symmetric stretching vibrational mode and identify a triplet splitting with spacings of 96 and 149 cm−1 which is believed to be due to spin–orbit coupling. Sequence bands involving the bending vibrational mode are also tentatively assigned. Only a small change in the symmetric stretching vibrational wave number is found between the electronic states involved in this transition (ν˜'1 =356 cm−1, ν˜″1 =360 cm−1). This result and the triplet splitting observed are discussed with respect to the possible electronic states involved and the assignment of this band system as either a Laporte forbidden g↔g transition involving the d orbitals on the Ni atom or an allowed u↔g charge transfer transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458315
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  • 3
    Electronic Resource
    Electronic Resource
    Portage guide to early intervention: cross-cultural aspects and intra-cultural variability (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Child 18 (1992), S. 0 
    Details
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Summary The issues arising from implementing an early intervention service, developed in the rural United States in the late 1960s in a range of different cultural contexts over a period of a quarter of a century, are explained. Services from India, Bangladesh, Jamaica and the United Kingdom are compared.As well as considering cross-cultural aspects of Portage, variability within one country, the United Kingdom, is considered by comparing one service in an inner-city area and one in a rural area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2214.1992.tb00367.x
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  • 4
    Electronic Resource
    Electronic Resource
    Improvement of ohmic contacts on GaAs with in situ cleaning (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1030-1032 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ argon ion mill clean step prior to ohmic metal deposition has been demonstrated to improve the uniformity of the contact parameters and reduce the contact resistance. After ion mill cleaning, the native oxide regrowth of molecular beam epitaxy grown GaAs and AlGaAs layers in vacuum chamber was also studied to optimize the processing. These oxide layers were identified as the cause of problems in the formation of good ohmic contacts to the GaAs or AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104414
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of individual organic compounds in shale oil (1980)
    s.l. : American Chemical Society
    Analytical chemistry 52 (1980), S. 1650-1657 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50061a027
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1188-1190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield, x-ray diffraction peak width, and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4 μm many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross-sectional transmission electron microscopy reveals an average defect density of ∼108 cm−2 in the GaAs layer, which is similar to the density in GaAs films grown directly on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98728
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  • 7
    Electronic Resource
    Electronic Resource
    Disordering of InGaAs-InP quantum wells by Si implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1428-1430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99136
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  • 8
    Electronic Resource
    Electronic Resource
    Hugoniot data for iron (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5496-5498 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A definitive set of the Los Alamos Hugoniot data for iron in a pressure regime extending to 442 GPa is given. Earlier standards data, obtained using conventional explosive systems, were thoroughly reprocessed. All original film records were reread. On the basis of more recent experiment and theory, some data were culled because the experimental designs were found to be insufficiently conservative. The analysis was also modified to take into account preheating of the explosively driven flyer plates. Minor clerical errors in transcription of measurements were corrected. An improved algorithm for the flash-gap time correction was incorporated. Higher-pressure data were obtained using a conventional 13-pin target assembly on a two-stage light gas gun. Several polynomial representations of the data are given. A linear fit to the data (Us=3.935+1.578 Up, where the shock velocity Us and the particle velocity Up are in km/s) has a root-mean-square misfit of 62 m/s. The quadratic fit (Us=3.691+1.788 Up−0.038 Up2) has a root-mean-square misfit of 39 m/s. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319320
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  • 9
    Electronic Resource
    Electronic Resource
    Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 775-783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near-surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60-keV 29Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 108 cm−2 in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341141
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  • 10
    Electronic Resource
    Electronic Resource
    High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2609-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trichloride vapor-phase epitaxy has been employed in a single chamber reactor to achieve the continuous (noninterrupted) growth of n−InP/n−In0.53Ga0.47As/InP superlattice structures for avalanche photodetector applications. Very low background doping has been achieved in both the InP (n≈1×1014 cm−3) and the superlattice layers (n=1×1015 cm−3). We report the details of the epitaxial crystal growth as well as analysis of the structures by secondary ion mass spectrometry and transmission electron microscopy. Avalanche photodiodes have been fabricated by Zn diffusion in the InP layer and mesa etching. The devices exhibit an intrinsic response time (full width at half maximum) of 66 ps at λ=1.5 μm which is the shortest so far achieved in superlattice photodetectors. Dark currents of 50 nA at unity gain, multiplication factors of 6, and breakdown voltages exceeding −120 V have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337129
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