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  • 1
    Electronic Resource
    Electronic Resource
    Pulse radiolysis study of the electron-transfer reactions from aromatic radical anions to styrene and substituted styrenes (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 1403-1407 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100254a020
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  • 2
    Electronic Resource
    Electronic Resource
    Estimate of cusp loss width in multicusp negative ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 968-970 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Expression of cusp loss width derived by Bosch and Merlino is applied to JAERI's Kamaboko source. The width is related to the ambipolar diffusion coefficient across the cusp magnetic field. Electron–ion collision is found 1.2–7.4 times larger as compared with electron-neutral collision. Averaged cusp magnetic field in the diffusion coefficient is taken as a parameter in the simulation code for Kamaboko source. When the averaged magnetic field is 48 G, simulation results agree well with JAERI's experiment in a wide range of pressure and arc power variation. The value of 48 G is reasonable from the consideration of confining the equation of ion source plasma. The obtained width is about 10 times the value evaluated by two times ion Larmor radius on the surface of cusp magnet. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148603
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  • 3
    Electronic Resource
    Electronic Resource
    Relation between vapor Cs and adsorbed Cs in H− ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 877-879 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τθ(very-much-less-than)τa, where τθ is the time scale of the Cs adsorption to the plasma grid surface and τa is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150319
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  • 4
    Electronic Resource
    Electronic Resource
    Numerical simulation of cesium cooling effects in H− ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 880-882 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Cesium volume reactions are included in a two-point model numerical code for a high power hydrogen negative ion source. The energy balance equation for the electron temperature and rate equations of Cs and Cs+ are included in our code to investigate the electron cooling and volume effects by cesium seeding. Cesium density in the ion source is taken as a variable for the calculation. Cesium is ionized over 95% in the driver region of the ion source. The electron temperature begins to decrease at cesium density 1011 cm−3 and the electron density increases because of the ionization of cesium. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150320
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  • 5
    Electronic Resource
    Electronic Resource
    Numerical simulation of the effect of Cs volume reaction in an H− ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1132-1134 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Effects of cesium related reactions are investigated using a simulation code for H− ion sources. Effects begin to appear when cesium density is 1011 cm−3, but are still small and become large when the cesium density is greater than 1012 cm−3. The H− density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller H− density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around 1011 cm−3. For cesium density greater than 1012 cm−3, the effect of the cesium related volume reaction becomes larger. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148646
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  • 6
    Electronic Resource
    Electronic Resource
    Statistical modeling of dynamic random access memory data retention characteristics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3091-3099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A statistical model to investigate the distribution of dynamic random access memory data retention times is proposed. The model assumes that the retention time is determined by a junction leakage current generated at carrier traps by a Shockley–Read–Hall process, and that the trap levels are randomly distributed not only among the memory cells but also within a cell. Monte Carlo results based on the model were in excellent agreement with experimental results, which confirmed the validity of the model. An analytical expression of the retention time distribution was also derived, and proved a good approximation near the 50% cumulative probability. Based on the model, variation in the retention time distributions among samples was found to be related to different trap-level distributions at the SiO2/Si interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363119
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  • 7
    Electronic Resource
    Electronic Resource
    Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beam (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 25-27 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variable-energy positron beam technique has been used to probe the vacancy-type defects in Si with a 43-nm-thick SiO2 layer induced by B+ implantation with the energy of 80 keV. From the measurements of line shape parameters as a function of incident positron energy, it was found that defects in the Si substrate are distributed in a parabolic form with the average depth shallower by 27% than the projected range of B+ ions for the specimen with a dose of 5×1012 B/cm2 and that defects are accumulated in large quantities at the SiO2 /Si interface for the specimen with higher doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100569
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  • 8
    Electronic Resource
    Electronic Resource
    New hydride vapor phase epitaxy for GaP growth on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1245-1247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth procedure applicable for growing a single domain GaP film on Si from H2-HCl-PH3-Ga reactants. An etch pit density of 7.5×106 cm−2 and a full width at half-maximum of 93 arcsec in a double-crystal x-ray rocking curve are achieved. Green light-emitting diodes with 565 nm peak wavelength are successfully fabricated using nitrogen-doped GaP films grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98693
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1678-1680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150 °C for 1 h while relaxed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101431
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical resistance of electron beam induced deposits from tungsten hexacarbonyl (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3043-3045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the change in electrical conductivity of deposits from focused electron beam induced dissociation of W(CO)6 for different exposure conditions. Lines were deposited by scanning repeatedly to build up the same total electron dose; with different electron doses per scan, resistance differences of more than one order of magnitude resulted. The lines with lower deposited thicknesses also have lower resistances, and so cannot be explained in terms of constant resistivity and different cross-sectional areas. A theoretical description involving an intermediate and a final product is proposed and compared to the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109133
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