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  • 1990-1994  (24)
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  • 1
    Electronic Resource
    Electronic Resource
    Transport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6819-6822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good electrical characteristics. The samples are all n type with electron concentrations varying in the range (3–9)×1015 cm−3. The mobilities are high (70 000 and 110 000 cm2/V s at 300 and 77 K, respectively) in InSb and the alloys. More importantly, the mobilities remain high at the low temperatures in the alloys also, without any type conversion. The mobility data have been analyzed taking into account the appropriate scattering mechanisms. The alloy scattering potential in InAs0.24 Sb0.76 is estimated to be 0.3 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345071
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7As (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 465-467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured impact ionization coefficients, α and β, in 150 A(ring) pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. α and β in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353874
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Flux motion dependence of resistive properties in superconducting YBa2Cu3O7−x thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1007-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two models of flux motion are employed to study the resistive properties of superconducting YBa2Cu3 O7−x thin films. The thermally activated flux creep model is employed to explain the dissipative behavior in the low resistivity region. However, when the resistivity is raised and approaches the normal state resistivity, the dissipative mechanism is gradually transferred from flux creep to flux flow. Based on the flux flow model, the upper critical field is estimated and shown as a function of temperature. In addition, a parallel resistivity circuit model is proposed to describe the transition behavior of the magnetic field dependence of resistivity versus current density characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351825
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  • 4
    Electronic Resource
    Electronic Resource
    The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 347-350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the growth and device characteristics of In0.53+x Ga0.47−x As/ In0.52 Al0.48 As (0≤x≤0.27) pseudomorphic modulation-doped field-effect transistors on InP substrates. In situ reflection high energy electron diffraction oscillation studies were carried out to study the growth of pseudomorphic InGaAs on GaAs and InP substrates. The data from these measurements and a theoretical formalism based on energy minimization suggest that in the pseudomorphic growth regime increased strain causes growth modes to change from two-dimensional layer-by-layer to a three-dimensional island mode. The resulting interface roughness is used as a parameter to explain the observed trends in channel mobility and device performance. It is also shown that altered growth techniques, such as migration enhanced epitaxy, in which the surface reconstruction may be changed, can restore the layer-by-layer growth mode for large amounts of strain in the pseudomorphic layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347140
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Suppression of defect propagation in semiconductors by pseudomorphic layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3800-3804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer can therefore prevent the defect from propagating across in and entering the critical active region of a device. Experimentally, the photoluminescence intensities of Al0.4Ga0.6As/GaAs quantum wells with and without pseudomorphic In0.2Ga0.8As layers for prevention of defect propagation have been compared. GaAs substrates of high etch pit density were used to generate defects below the quantum well and silicon implantation was used to generate defects above it. The elevated temperatures during molecular-beam-epitaxial growth and postimplant rapid thermal annealing serve to assist in defect propagation in the respective regions of the heterostructure. The structures with pseudomorphic In0.2Ga0.8As layers consistently showed much higher quantum-well photoluminescence intensities than those without the pseudomorphic layers. These results indicate smaller defect densities in the quantum wells with pseudomorphic layers and strongly support the defect propagation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354472
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum-well structures by x-ray diffraction (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7389-7394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin InxGa1−xAs layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle (∼2.0°). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed by the dynamical diffraction theory. The critical thickness for an InGaAs layer embedded in GaAs obtained from x-ray data is shown to be larger than that predicted by the force balance model. The strain tensors as a function of layer thickness are also analyzed for the buried InxGa1−xAs of different x values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354030
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  • 7
    Electronic Resource
    Electronic Resource
    High-power, very low threshold, GaInP/AlGaInP visible diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100 μs pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104845
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction studies of the growth of strained InxGa1−xAs on GaAs substrate by migration-enhanced epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction oscillations have been studied during the growth of strained InxGa1−xAs on GaAs by molecular beam epitaxy and migration-enhanced epitaxy. The oscillations decay rapidly for x(approximately-greater-than)0.2 during molecular beam epitaxy, while they persist for a long while during migration-enhanced epitaxy. We believe that the altered surface reconstruction pattern in the latter case changes the growth mode from three-dimensional to a near perfect two-dimensional mode for high strain values. Using migration-enhanced epitaxy, we demonstrate improved channel mobility and performance of GaAs-based modulation-doped field-effect transistors and narrower linewidths in the low-temperature excitonic photoluminescence of In0.1Ga0.9As/Al0.3Ga0.7As quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103594
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 180-182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The biaxial strain produced in lattice-mismatched epitaxy can have a substantial effect on the valence band structure. Theoretical results are presented for a hydrogenic acceptor in a quantum well under tensile and compressive strain. The acceptor level energy is a strong function of strain and could be used as a signature for the effect of strain on the valence band structure. Experimental studies are carried out on compressively strained InyGa1−yAs/ AlxGa1−xAs quantum well structures and the acceptor level energy is determined by photoluminescence measurements. Good agreement is found with the experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103977
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  • 10
    Electronic Resource
    Electronic Resource
    Single quantum well laser with vertically integrated passive waveguides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The condition for the fundamental mode operation in a single quantum well laser with vertically integrated passive waveguides has been studied. With proper choice of parameters, transverse beam divergence as low as 19° has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102483
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